Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices

A. Matsumoto, Y. Takei, A. Matsushita, K. Akahane, Y. Matsushima, K. Utaka
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Abstract

We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.
超快全光逻辑门器件1550nm波段QD-SOA增益特性及飞秒光脉冲响应
利用MBE生长的应变补偿技术制备了由20层堆叠的InAs量子点结构组成的QD-SOA,并在1550nm波长范围内对全光逻辑门器件的基频增益特性和超快光脉冲响应进行了评估。当器件长度为1650 μm时,TE模式的最大增益为34.7 dB。我们还通过自相关波形测量了飞秒光脉冲响应,观察到脉冲的微增宽约为55 fs。
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