Monolithic InGaAs-on-Si micro-disk ensemble LED with peak luminescence at 1.58 μm

Abstract

Ensembles of p-i-n InGaAs micro-discs, grown by micro selective-area metalorganic chemical vapor deposition are fabricated into LED structures. These structures exhibit electroluminescence with spectral peaks at 1580 nm, a sharp roll-off at 1590 nm and a full-width half-maximum in excess of 90 nm depending on injection current. This spectrum covers the entire C-band and establishes monolithic InGaAs-on-Si as a potential candidate for filling the need for on-silicon light-sources.