基于InP/AlInGaAsP合金的有源光学元件对接集成

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880579

I. Kulkova, N. Kuznetsova, E. Semenova, K. Yvind

{"title":"基于InP/AlInGaAsP合金的有源光学元件对接集成","authors":"I. Kulkova, N. Kuznetsova, E. Semenova, K. Yvind","doi":"10.1109/ICIPRM.2014.6880579","DOIUrl":null,"url":null,"abstract":"We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Butt-joint integration of active optical components based on InP/AlInGaAsP alloys\",\"authors\":\"I. Kulkova, N. Kuznetsova, E. Semenova, K. Yvind\",\"doi\":\"10.1109/ICIPRM.2014.6880579\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880579\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们展示了基于InP/AlInGaAsP平台的QW半导体光放大器(SOA)和MQW电吸收调制器(EAM)的全主动平面高质量对接(BJ)集成。通过μPL测量，确定了~1 μm至BJ界面附近的光学性质的退化。

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Butt-joint integration of active optical components based on InP/AlInGaAsP alloys

We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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