L. Fang, C. Bachelet, I. Sagnes, G. Beaudoin, J. Oudar
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Ion implanted In0.53Ga0.47As for ultrafast saturable absorber device at 1.55 μm
Iron (Fe) ion implantation with post-annealing was used to shorten the carrier lifetime of In0.53Ga0.47As-based saturable absorber due to an effective Fe3+/Fe2+ trap level. The modulation depth and the nonsaturable loss were investigated. Moreover, we found that the saturation of Fe-related trap level at high excited carrier density can be avoided by introducing Zn dopant in InGaAs. Furthermore, by comparing As and Fe-implanted InGaAs samples, we found that Fe2+/Fe3+ is more effective as a trap center for electrons and holes, while ionized As is a trap center only for electrons in InGaAs.
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