Fabrication of submicron planar Gunn diode

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880542

A. Khalid, S. Thoms, D. Macintyre, I. Thayne, D. Cumming

引用次数: 3

Abstract

We present, for the first time, the fabrication process for a submicron planar Gunn diode in In0.53Ga0.47As on an InP substrate operating at 265 GHz. A novel two stage lift off method has been developed to achieve a submicron gaps between contacts down to 135 nm with widths up to 120 μm.

查看原文本刊更多论文

亚微米平面Gunn二极管的制备

我们首次提出了在工作频率为265 GHz的InP衬底上，在In0.53Ga0.47As中制作亚微米平面Gunn二极管的工艺。一种新型的两级分离方法可以实现触点之间的亚微米间隙，宽度可达120 μm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

26th International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量