Jooseok Lee, Maengkyu Kim, Jongwon Lee, Kyounghoon Yang
{"title":"基于inp的量子效应隧穿装置的亚毫瓦d波段二谐振荡器","authors":"Jooseok Lee, Maengkyu Kim, Jongwon Lee, Kyounghoon Yang","doi":"10.1109/ICIPRM.2014.6880527","DOIUrl":null,"url":null,"abstract":"A compact D-band 2nd harmonic oscillator utilizing a push-push approach is demonstrated for the first time by using InP-based RTDs (resonant tunneling diodes). In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD MMIC technology operates at an oscillation frequency of 164.6 GHz. The total dc power consumption of the RTD oscillator is 0.4 mW, which is the lowest value reported up to date in the mm-wave D-band MMIC oscillators.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A sub-mW D-band 2nd harmonic oscillator using InP-based quantum-effect tunneling devices\",\"authors\":\"Jooseok Lee, Maengkyu Kim, Jongwon Lee, Kyounghoon Yang\",\"doi\":\"10.1109/ICIPRM.2014.6880527\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact D-band 2nd harmonic oscillator utilizing a push-push approach is demonstrated for the first time by using InP-based RTDs (resonant tunneling diodes). In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD MMIC technology operates at an oscillation frequency of 164.6 GHz. The total dc power consumption of the RTD oscillator is 0.4 mW, which is the lowest value reported up to date in the mm-wave D-band MMIC oscillators.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880527\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A sub-mW D-band 2nd harmonic oscillator using InP-based quantum-effect tunneling devices
A compact D-band 2nd harmonic oscillator utilizing a push-push approach is demonstrated for the first time by using InP-based RTDs (resonant tunneling diodes). In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD MMIC technology operates at an oscillation frequency of 164.6 GHz. The total dc power consumption of the RTD oscillator is 0.4 mW, which is the lowest value reported up to date in the mm-wave D-band MMIC oscillators.