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Economical Analysis and Optimization of a Low Pressure Chemical Vapor Depositioni (LPCVD) Reactor 低压化学气相沉积(LPCVD)反应器的经济性分析与优化
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995538
T. Tamani, P. Duverneuil, J. Couderc
{"title":"Economical Analysis and Optimization of a Low Pressure Chemical Vapor Depositioni (LPCVD) Reactor","authors":"T. Tamani, P. Duverneuil, J. Couderc","doi":"10.1051/JPHYSCOL:1995538","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995538","url":null,"abstract":"An economical analysis of the LPCVD hot wall tubular reactor functioning is presented including equipment amortization, clean room location, supplies, maintenance, labor, gas and energy consumption. From a technical point of view, CVDI model is used to characterise the phenomena involved during polysilicon deposition, linking growth rate distribution to operating conditions. An optimization is then realized in three different cases with and without a temperature profile. By this study the main costs of CVD operation such as gases consumption and equipment amortization are identified, and the total cost has been drastically reduced by using a temperature profile.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"49 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73681094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOCVD Routes to Tl2Ba2Can-1CunO4+2nSuperconductor and Dielectric Insulator Thin Films MOCVD制备Tl2Ba2Can-1CunO4+ 2n超导体和介电绝缘体薄膜
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995546
B. Hinds, D. Studebaker, Jian‐Hong Chen, R. McNeely, B. Han, J. Schindler, T. Hogan, C. Kannewurf, T. Marks
{"title":"MOCVD Routes to Tl2Ba2Can-1CunO4+2nSuperconductor and Dielectric Insulator Thin Films","authors":"B. Hinds, D. Studebaker, Jian‐Hong Chen, R. McNeely, B. Han, J. Schindler, T. Hogan, C. Kannewurf, T. Marks","doi":"10.1051/JPHYSCOL:1995546","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995546","url":null,"abstract":"The evolution of HTS device technologies will benefit from the development of MOCVD (Metal-organic Chemical Vapor Deposition) routes to high quality HTS films as well as to those of insulators with low dielectric loss and close HTS lattice matches. Reviewed here are research efforts at precursor design focusing on Ba sources. A novel low pressure TGA technique is used to compare volatilities of MOCVD precursors and to quantify the role of gas phase diffusion in film growth. To form high quality Tl 2 Ba 2 Ca n-1 Cu n O 4+2n (n = 2,3) films, BaCaCuO(F) films are first deposited by MOCVD using the liquid precursors Ba(hfa) 2 .mep, Ca(hfa) 2 .tet, and solid Cu(dpm) 2 (hfa = hexafluoroacetylacetonate, dpm = dipivaloylmethanate. mep = methylethylpentaglyme, tet = tetraglyme). The film growth process is shown to be mass transport-limited, and an interesting ligand exchange process is identified. The superconducting TBCCO phase is formed following an ex-situ anneal in the presence of Tl 2 O at temperatures from 820-900°C. Transport properties of TBCCO-2223 films include a T C as high as 115K. J C of 2x10 5 A/cm 2 (77K), and Rs of 0.35mΩ (5K, 10 GHz). The MOCVD growth of low loss, lattice-matched dielectric NdGaO 3 , PrGaO 3 , Sr 2 AlTaO 6 , and SrPrGaO 4 films is also discussed. High quality YBa 2 Cu 3 O 7-x films have been grown upon MOCVD-derived PrGaO 3 substrates.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"77 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72591833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thin Films of Zirconia-Phosphate Glasses Deposited by an Aerosol CVD Process 气溶胶气相沉积法制备磷酸锆玻璃薄膜
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955121
J. Deschanvres, J. Vaca, J. Joubert
{"title":"Thin Films of Zirconia-Phosphate Glasses Deposited by an Aerosol CVD Process","authors":"J. Deschanvres, J. Vaca, J. Joubert","doi":"10.1051/JPHYSCOL:19955121","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955121","url":null,"abstract":"The polycrystalline state of the ZrO 2 films was an disadvantage for some specific protective coating applications. To resolve this fact we proposed to obtain an amorphous thin film by addition of P 2 O 5 , which will act as glass formator agent. With an aerosol CVD process by using zirconium acetylacetonate and triphenyl phosphate dissolved in a mixture of acetylacetone and benzyl alcohol, we achieved to deposit mixed P 2 O 5 -ZrO 2 films between 480°C and 600°C. The P 2 O 5 content varied from 0% up to 60%. By measuring systematically the composition of the film we have noticed the influence on the composition of the films, on the one hand of the hygrometric degree of the carrier gas and on the other hand of the temperature used for the dissolution of the organometallic precursors in the solvent. The highest the dissolution temperature was, the most the phosphorus content was. After an annealing at 500°C during one hour, the films exhibited by X-ray diffraction analysis an amorphous structure and a very good transparency. More over the evolution of the I.R. spectra between 1200 cm -1 and 900 cm -1 and around 400 cm -1 are discussed in function of the composition of the films.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74797102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Preparation of Ultrafine CVD WC Powders Deposited from WCl6 Gas Mixtures WCl6混合气相沉积超细CVD WC粉末的制备
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955119
Xing Tang, R. Haubner, B. Lux, B. Kieffer
{"title":"Preparation of Ultrafine CVD WC Powders Deposited from WCl6 Gas Mixtures","authors":"Xing Tang, R. Haubner, B. Lux, B. Kieffer","doi":"10.1051/JPHYSCOL:19955119","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955119","url":null,"abstract":"Ultrafine WC powders were produced from WCl6-C3H8-H2 gaz mixtures in a conventional tubular hot-wall downstream CVD reactor. At reaction temperatures between 1100 and 1550°C powders containing W, W2C, WC and carbon were produced. The overall chemical compositions of the tungsten compounds as well as the free carbon contents depended strongly on the reaction temperature and the ratio of the reaction gases introduced. With increased reaction temperature and exposure time the amount of tungsten carbides (WC, W2C) in the deposits increased. At the selected conditions pure WC could be detected by X-ray diffraction. However, excess carbon was always present, while carbon particles could not be obsemed by SEM in the powder mixtures. This could be explained by thin carbon layers on the carbide particles. The WC powder particles were very fine but only particles or agglomerates smaller than 0.5 µm can be observed by SEM. A deposition mechanism based on reduction of the chlorides and their carburization to the carbides is discussed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"93 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80271058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
MOCVD of high quality YBa2Cu3O7−δ thin films using novel fluorinated and non-fluorinated precursors 采用新型氟化和非氟化前驱体制备高质量YBa2Cu3O7−δ薄膜
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/jphyscol:1995547
B. C. Richads, S. Cook, D. L. Pinch, G. W. Andrews
{"title":"MOCVD of high quality YBa2Cu3O7−δ thin films using novel fluorinated and non-fluorinated precursors","authors":"B. C. Richads, S. Cook, D. L. Pinch, G. W. Andrews","doi":"10.1051/jphyscol:1995547","DOIUrl":"https://doi.org/10.1051/jphyscol:1995547","url":null,"abstract":"The first high quality, YBa 2 Cu 3 O 7-5 thin films have been produced by MOCVD using the novel fluorinated and non-fluorinated precursors, [Ba(TDFND) 2 .tetraglyme], [Cu(TDFND) 2 ] and [Y(TMHD) 3 .4- t BuPyNO] 2 and the traditional β-diketonate complexes [Y(TMHD) 3 ] 3 and [Cu(TMHD) 2 ]. The novel precursors are thermally stable and highly volatile. Their low melting points, 90 K and critical current density, J c > 10 6 Acm -2 at 77K. Fluorine content ∼100 ppm has been determined by SIMS.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79412400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolution of Magnetomechanical and Magnetic Properties of Siliconized Iron-Silicon Alloys by CVD Process Using SiCl4 用SiCl4 CVD工艺制备硅化铁硅合金的磁力学和磁性能演变
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955123
S. Crottier-Combe, S. Audisio, J. Degauque, C. Béraud, Fausto Fiorillo, M. Baricco, J. Porteseil
{"title":"Evolution of Magnetomechanical and Magnetic Properties of Siliconized Iron-Silicon Alloys by CVD Process Using SiCl4","authors":"S. Crottier-Combe, S. Audisio, J. Degauque, C. Béraud, Fausto Fiorillo, M. Baricco, J. Porteseil","doi":"10.1051/JPHYSCOL:19955123","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955123","url":null,"abstract":"Non-oriented and grain-oriented 6.5% Si-Fe laminations have been prepared by means of the dynamic Chemical Vapour Deposition technique, exploiting a chemical reaction at 1000°C between a flowing SiCl 4 + Ar mixture and an iron-silicon based substrate. The siliconizing process leads, from the first moments, to an epitaxial growth of Fe 3 Si, then to an underlayer solid solution by intermetallic diffusion. The optimum treatment has been chosen as 60 minutes at 1000°C, followed by 13 hour annealing in vacuum at the same temperature, which permits one to achieve the desired uniform concentration of Si around 6.5 wt %. NO and GO treated samples have been magnetically characterized in the frequency range 0.5 Hz - 1 kHz. A decrease between 15% and 50% of the energy loss has been observed in the CVD laminations.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"AES-5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84477509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Transmission Electron Microscopy Studies of (AIN-Si3N4) Codeposits Obtained by LPCVD LPCVD法制备(AIN-Si3N4)共沉积的透射电镜研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955107
P. Marti, F. Henry, A. Mazel, B. Armas, J. Sévely
{"title":"Transmission Electron Microscopy Studies of (AIN-Si3N4) Codeposits Obtained by LPCVD","authors":"P. Marti, F. Henry, A. Mazel, B. Armas, J. Sévely","doi":"10.1051/JPHYSCOL:19955107","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955107","url":null,"abstract":"Several (Al,Si,N) compounds have been obtained by LPCVD in a vertical hot-wall reactor using aluminium trichloride, silicon tetrachloride and ammonia as source gases, with nitrogen as the carrier gas. In order to determine both their structure and local chemical composition, several deposits have been examined by analytical transmission electron microscopy combining electron diffraction (ED), high resolution electron microscopy (HREM) and electron energy loss spectroscopy (EELS). It has been confirmed that the chemical composition of the materials as well as the size of the nanocrystals observed in the deposits are strongly dependent on the temperature and the reactive gas flow. It has also been shown that for the range of temperature (1273 K-1373 K) used in this work these nanocrystals have the wurtzite structure of aluminium nitride.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"284 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76856714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy 氮化镓薄膜CVD的原位气相紫外光谱研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995520
S. Alexandrov, A. Kovalgin, D. Krasovitskiy
{"title":"A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy","authors":"S. Alexandrov, A. Kovalgin, D. Krasovitskiy","doi":"10.1051/JPHYSCOL:1995520","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995520","url":null,"abstract":"Direct in situ UV spectroscopic analysis of the gas phase was performed during chemical vapour deposition of gallium nitride films based on pyrolysis of GaCl 3 NH 3 complexes. The most probable mechanism of film formation is proposed on the basis of the experimental results obtained.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86903347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparison Between CVD and ALE Produced TiO2 Cathodes in Zn/(PEO)4ZnCl2/TiO2,SnO2 or ITO Galvanic Cells 在Zn/(PEO)4ZnCl2/TiO2、SnO2和ITO原电池中CVD和ALE制备TiO2阴极的比较
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955134
A. Turkovic, A. Drašner, D. Šokčević, M. Ritala, T. Asikainen, M. Leskelä
{"title":"Comparison Between CVD and ALE Produced TiO2 Cathodes in Zn/(PEO)4ZnCl2/TiO2,SnO2 or ITO Galvanic Cells","authors":"A. Turkovic, A. Drašner, D. Šokčević, M. Ritala, T. Asikainen, M. Leskelä","doi":"10.1051/JPHYSCOL:19955134","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955134","url":null,"abstract":"The way of preparation of thin films of TiO 2 is extremely important regarding its application in electronic and optoelectronic devices. We have assembled Zn/(PEO) 4 ZnCl 2 /TiO 2 ,SnO 2 or ITO rechargeable galvanic cells using CVD (chemical vapour deposition) or ALE (atomic layer epitaxy) produced TiO 2 cathodes. The charge-discharge cycles were measured with a constant current in the range of 10 -6 to 10 -5 A for different cells. It was shown that CVD prepared TiO 2 cathode is increasing capacity of the cell by allowing higher constant currents to be applied to the cell. The complex impedance measurements of the electrolyte (PEO) 4 ZnCl 2 have been performed in the range of 1 Hz to 1 MHz and in the temperature range from 290 to 400 K by applying Zn or Sn electrodes.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"115 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86206112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
CVD Synthesis of HTSC Films Using Volatile Coordination Compounds 挥发性配位化合物CVD合成HTSC薄膜
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995565
S. Volkov, V. Zub, O. N. Balakshina, E. Mazurenko
{"title":"CVD Synthesis of HTSC Films Using Volatile Coordination Compounds","authors":"S. Volkov, V. Zub, O. N. Balakshina, E. Mazurenko","doi":"10.1051/JPHYSCOL:1995565","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995565","url":null,"abstract":"Thin HTSC films of YBa 2 Cu 3 O 7-x with high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium acetylacetonate with α,α'-dipyridyl as precursors. In-situ films were deposited in N 2 and O 2 gas reactant mixture at reduced substrate temperatures. HTSC films prepared on SrTiO 3 , ZrO 2 (Y) and MgO substrates have rather high electric characteristics (e.g. j c 10 4 - 10 5 A/cm 2 ). The problem of β-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of superconductive films was discussed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"69 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90766877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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