A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI:10.1051/JPHYSCOL:1995520

S. Alexandrov, A. Kovalgin, D. Krasovitskiy

引用次数: 2

Abstract

Direct in situ UV spectroscopic analysis of the gas phase was performed during chemical vapour deposition of gallium nitride films based on pyrolysis of GaCl 3 NH 3 complexes. The most probable mechanism of film formation is proposed on the basis of the experimental results obtained.

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氮化镓薄膜CVD的原位气相紫外光谱研究

研究了基于gac3nh3配合物热解化学气相沉积氮化镓薄膜的气相直接原位紫外光谱分析。根据实验结果，提出了最可能的成膜机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Le Journal De Physique Colloques

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