用SiCl4 CVD工艺制备硅化铁硅合金的磁力学和磁性能演变

S. Crottier-Combe, S. Audisio, J. Degauque, C. Béraud, Fausto Fiorillo, M. Baricco, J. Porteseil
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引用次数: 1

摘要

通过动态化学气相沉积技术,利用流动的sicl4 + Ar混合物和铁硅基衬底在1000℃下发生化学反应,制备了无取向和晶粒取向的6.5% Si-Fe层状材料。硅化过程从最初的瞬间开始,导致Fe - 3si外延生长,然后通过金属间扩散形成底层固溶体。选择的最佳处理方法是在1000℃下60分钟,然后在相同温度下在真空中退火13小时,这样可以达到所需的均匀Si浓度,约为6.5 wt %。NO和GO处理的样品在0.5 Hz - 1 kHz的频率范围内进行了磁性表征。在CVD层合中观察到能量损失减少了15%至50%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evolution of Magnetomechanical and Magnetic Properties of Siliconized Iron-Silicon Alloys by CVD Process Using SiCl4
Non-oriented and grain-oriented 6.5% Si-Fe laminations have been prepared by means of the dynamic Chemical Vapour Deposition technique, exploiting a chemical reaction at 1000°C between a flowing SiCl 4 + Ar mixture and an iron-silicon based substrate. The siliconizing process leads, from the first moments, to an epitaxial growth of Fe 3 Si, then to an underlayer solid solution by intermetallic diffusion. The optimum treatment has been chosen as 60 minutes at 1000°C, followed by 13 hour annealing in vacuum at the same temperature, which permits one to achieve the desired uniform concentration of Si around 6.5 wt %. NO and GO treated samples have been magnetically characterized in the frequency range 0.5 Hz - 1 kHz. A decrease between 15% and 50% of the energy loss has been observed in the CVD laminations.
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