WCl6混合气相沉积超细CVD WC粉末的制备

Xing Tang, R. Haubner, B. Lux, B. Kieffer
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引用次数: 12

摘要

以WCl6-C3H8-H2气相混合物为原料,在常规管状热壁下游CVD反应器中制备超细WC粉末。在1100 ~ 1550℃的反应温度下,可制得含有W、W2C、WC和碳的粉末。钨化合物的总体化学组成和游离碳含量与反应温度和引入气体的比例有很大关系。随着反应温度的升高和暴露时间的延长,沉积物中碳化钨(WC、W2C)的含量增加。在选定的条件下,可以用x射线衍射检测到纯WC。然而,过量的碳总是存在,而碳颗粒在粉末混合物中无法通过扫描电镜观察到。这可以用碳化物颗粒上的薄碳层来解释。WC粉颗粒非常细,但扫描电镜只能观察到小于0.5µm的颗粒或团聚体。讨论了一种基于氯化物还原和渗碳的沉积机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation of Ultrafine CVD WC Powders Deposited from WCl6 Gas Mixtures
Ultrafine WC powders were produced from WCl6-C3H8-H2 gaz mixtures in a conventional tubular hot-wall downstream CVD reactor. At reaction temperatures between 1100 and 1550°C powders containing W, W2C, WC and carbon were produced. The overall chemical compositions of the tungsten compounds as well as the free carbon contents depended strongly on the reaction temperature and the ratio of the reaction gases introduced. With increased reaction temperature and exposure time the amount of tungsten carbides (WC, W2C) in the deposits increased. At the selected conditions pure WC could be detected by X-ray diffraction. However, excess carbon was always present, while carbon particles could not be obsemed by SEM in the powder mixtures. This could be explained by thin carbon layers on the carbide particles. The WC powder particles were very fine but only particles or agglomerates smaller than 0.5 µm can be observed by SEM. A deposition mechanism based on reduction of the chlorides and their carburization to the carbides is discussed.
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