发布求助
文献互助 智能选刊 最新文献

Le Journal De Physique Colloques最新文献

筛选
英文 中文
Properties of Surface Layers Produced from a Metalorganic Titanium Compound Under Glow Discharge Conditions 辉光放电条件下金属有机钛化合物表面层的性能研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995584
T. Wierzchoń, J. Sobiecki
{"title":"Properties of Surface Layers Produced from a Metalorganic Titanium Compound Under Glow Discharge Conditions","authors":"T. Wierzchoń, J. Sobiecki","doi":"10.1051/JPHYSCOL:1995584","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995584","url":null,"abstract":"A prospective line in the development of thermo-chemical treatments under glow discharge conditions is to work out new techniques of producing multicomponent layers, e.g., composite layers, by combining various treatments, such as e.g. plasma nitriding and the PACVD method. The combined properties, appropriately selected and complementary to one another, of the single-component layers obtained using one of these processes, permit widening the application range of the layers. The paper specifies the conditions under which the multicomponent layers of Ti(OCN) type and composite layers of the nitrided + TiN or nitrided + Ti(OCN) type can be produced on steel. The structure and properties of the layers thus obtained are also described.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81313508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low Temperature Deposition of TiN Ceramic Material by Metal Organic and/or Plasma Enhanced CVD 金属有机和/或等离子体增强CVD低温沉积TiN陶瓷材料
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995587
C. Spee, J. Driessen, A. Kuypers
{"title":"Low Temperature Deposition of TiN Ceramic Material by Metal Organic and/or Plasma Enhanced CVD","authors":"C. Spee, J. Driessen, A. Kuypers","doi":"10.1051/JPHYSCOL:1995587","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995587","url":null,"abstract":"A review is presented describing the development of TiN-CVD from the classical, high temperature TiCl 4 /N 2 process, towards low temperature MOCVD processes. This development is presented from a chemical point of view. In addition to low pressure (LPCVD) and atmospheric pressure (APCVD) thermal processing, also plasma enhanced (PECVD) techniques are described. In the past few years production facilities for good quality TiN layers for wear resistant applications have come on the market. Production facilities for IC-technology applications of CVD-TiN are on the edge of breaking through. For both applications deposition temperatures have been reduced to 500-600°C. Research developments, have shown even lower deposition temperatures possible for TiN and Ti(C,N) layers.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81484832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Design of Zr(IV) and Hf(IV) Co-Ordination Compounds - Precursors for MOCVD Synthesis of Protective Coatings Zr(IV)和Hf(IV)配位化合物的设计- MOCVD合成保护涂层的前驱体
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995557
A. Grafov, E. Mazurenko, G. Battiston, P. Zanella
{"title":"Design of Zr(IV) and Hf(IV) Co-Ordination Compounds - Precursors for MOCVD Synthesis of Protective Coatings","authors":"A. Grafov, E. Mazurenko, G. Battiston, P. Zanella","doi":"10.1051/JPHYSCOL:1995557","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995557","url":null,"abstract":"Design and creation of new materials with unusual, predictable or predeterminated properties become one of the most actual problems of modern applied chemistry. Main demands are discussed, which are made to chemical compounds used in CVD synthesis of functional materials. A division of volatile metal-containing precursors into main classes is given. On the basis of volatility and thermal stabiliti criteria elaborated at IGIC-NASU, we have designed, synthesized and characterized a series of new advanced precursors for Zr(IV) and Hf(IV). Their properties are compared to those of known species. A possibility of formation of requested properties and structure of final materials is shown.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80462832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
MO CVD of Noble Metals 贵金属的MO CVD
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995556
I. Igumenov
{"title":"MO CVD of Noble Metals","authors":"I. Igumenov","doi":"10.1051/JPHYSCOL:1995556","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995556","url":null,"abstract":"The state of the art in research and application of processes of chemical vapour deposition of noble metal (Pt, Pd, Rh, Ir , Ru, Au) coatings is considered. Systematization of known experimental data on synthesis, thermal properties and saturated vapour pressure of volatile compounds of noble metals with organic ligands is provided. The processes of CVD of noble metals were analized from general requirements to precursors. It is shown that chelate or mixed-ligand noble metal complexes and, in particular β-diketonate derivatives due to their thermal properties are the most suitable for deposition of noble metal thick films.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"130 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90284323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers 掺杂气体对LPCVD原位掺杂多晶硅层生长速率轴向均匀性和电性能的影响
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955105
D. Briand, M. Sarret, P. Duverneuil, T. Mohammed‐Brahim, K. Kis-Sion
{"title":"Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers","authors":"D. Briand, M. Sarret, P. Duverneuil, T. Mohammed‐Brahim, K. Kis-Sion","doi":"10.1051/JPHYSCOL:19955105","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955105","url":null,"abstract":"We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B 2 H 6 /SiH 4 mole ratio is put forward, and this effect appears to be very strong especially at high pressure. It is explained by a lowering of the diborane concentration in the gas mixture along the load, because of a different threshold for the thermal decomposition of diborane and silane. It is also put forward that a critical concentration of boron exists above which the growth rate is increasing. Improvements of the horizontal homogeneity are obtained by varying the total gas flow rate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91094294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
CVD Conference Recollections CVD会议回忆
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995567
J. Blocher
{"title":"CVD Conference Recollections","authors":"J. Blocher","doi":"10.1051/JPHYSCOL:1995567","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995567","url":null,"abstract":"HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. CVD Conference Recollections J. Blocher","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91150277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures SiH4-CH4-H2混合气体PECVD中的粉末耗散
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955133
P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli, C. Summonte
{"title":"Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures","authors":"P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli, C. Summonte","doi":"10.1051/JPHYSCOL:19955133","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955133","url":null,"abstract":"The effective dissipated power in SiH 4 -CH 4 -H 2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH 4 concentration and decreases with increasing H 2 concentration. Optical, electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"44 1","pages":"1125"},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91518849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Deposition of Thick Layers, in a New CVD Reactor 在新型CVD反应器中沉积厚层
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955117
H. Vergnes, E. Scheid, P. Duverneuil, J. Couderc
{"title":"Deposition of Thick Layers, in a New CVD Reactor","authors":"H. Vergnes, E. Scheid, P. Duverneuil, J. Couderc","doi":"10.1051/JPHYSCOL:19955117","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955117","url":null,"abstract":"This paper present a new kind of equipment called the annular reactor, which has been designed to treat a great number of substrates with a particularly good uniformity of thickness of deposits on the batch. Furthermore, a small scale pilot plant of this apparatus, called the sector reactor, has been built. It constitutes a very convenient laboratory piece of equipment, particularly useful to perform, at low cost, the unavoidable experimental part of the development of any new application. Theoretical and experimental results obtained with these reactors are presented and compared to those obtained when using tubular reactors. First tests in order to produce cheap thick layers are also reported.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91284886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the Use of H2 Plasma for the Cleaning and Passivation of InP Substrates H2等离子体在InP衬底清洗和钝化中的应用研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995579
G. Bruno, M. Losurdo, P. Capezzuto
{"title":"On the Use of H2 Plasma for the Cleaning and Passivation of InP Substrates","authors":"G. Bruno, M. Losurdo, P. Capezzuto","doi":"10.1051/JPHYSCOL:1995579","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995579","url":null,"abstract":"The effectiveness of hydrogen plasma for the reduction process of surface native oxide on InP substrates is investigated by X-ray photoelectron spectroscopy (XPS) and by phase modulated spectroscopic ellipsometry (PMSE). H2 plasmas, generated in a quartz tube by applying a r.f. field (13.56 MHz) to external electrodes, produce a very high H-atom flux (5.10 20 atoms/cm 2 .sec) in the downstream region. The ex-situ XPS and in-situ PMSE measurements indicate that the native oxide layer (25 A) is completely removed. The end point of the cleaning process is well detected by kinetic ellipsometry. The plasma treated surface shows a higher stability to reoxidation than that observed for wet etches samples.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78563782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate 光辅助CVD法制备乙酰丙酮铜膜的动力学研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995575
D. Tonneau, R. Pierrisnard, H. Dallaporta, W. Marine
{"title":"Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate","authors":"D. Tonneau, R. Pierrisnard, H. Dallaporta, W. Marine","doi":"10.1051/JPHYSCOL:1995575","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995575","url":null,"abstract":"Copper thin films have been deposited by thermal decomposition of copper acetylacetonate-oxygen mixtures. Copper films of high quality as observed by Auger Electron Spectroscopy (AES) have been obtained at temperatures as low as 300°C. Under UV illumination, this temperature threshold decreased down to 225°C. The influence of substrate temperature and layer thickness on film roughness as observed by Atomic Force Microscopy is discussed. The kinetics of Cu(acac) 2 decomposition has been investigated as a function of precursor partial pressure and substrate temperature in the range of 200-350°C, and the maximum deposition rate of 25 A/min has been reached in the mass transport regime at a substrate temperature of 350°C and a precursor partial pressure of 0.04 Torr. The deposition rate could be substancially enhanced by UV photoassistance.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87084538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书