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Le Journal De Physique Colloques最新文献

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Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers 掺杂气体对LPCVD原位掺杂多晶硅层生长速率轴向均匀性和电性能的影响
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955105
D. Briand, M. Sarret, P. Duverneuil, T. Mohammed‐Brahim, K. Kis-Sion
{"title":"Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers","authors":"D. Briand, M. Sarret, P. Duverneuil, T. Mohammed‐Brahim, K. Kis-Sion","doi":"10.1051/JPHYSCOL:19955105","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955105","url":null,"abstract":"We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B 2 H 6 /SiH 4 mole ratio is put forward, and this effect appears to be very strong especially at high pressure. It is explained by a lowering of the diborane concentration in the gas mixture along the load, because of a different threshold for the thermal decomposition of diborane and silane. It is also put forward that a critical concentration of boron exists above which the growth rate is increasing. Improvements of the horizontal homogeneity are obtained by varying the total gas flow rate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91094294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
CVD Conference Recollections CVD会议回忆
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995567
J. Blocher
{"title":"CVD Conference Recollections","authors":"J. Blocher","doi":"10.1051/JPHYSCOL:1995567","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995567","url":null,"abstract":"HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. CVD Conference Recollections J. Blocher","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91150277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deposition of Thick Layers, in a New CVD Reactor 在新型CVD反应器中沉积厚层
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955117
H. Vergnes, E. Scheid, P. Duverneuil, J. Couderc
{"title":"Deposition of Thick Layers, in a New CVD Reactor","authors":"H. Vergnes, E. Scheid, P. Duverneuil, J. Couderc","doi":"10.1051/JPHYSCOL:19955117","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955117","url":null,"abstract":"This paper present a new kind of equipment called the annular reactor, which has been designed to treat a great number of substrates with a particularly good uniformity of thickness of deposits on the batch. Furthermore, a small scale pilot plant of this apparatus, called the sector reactor, has been built. It constitutes a very convenient laboratory piece of equipment, particularly useful to perform, at low cost, the unavoidable experimental part of the development of any new application. Theoretical and experimental results obtained with these reactors are presented and compared to those obtained when using tubular reactors. First tests in order to produce cheap thick layers are also reported.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91284886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of Zr(IV) and Hf(IV) Co-Ordination Compounds - Precursors for MOCVD Synthesis of Protective Coatings Zr(IV)和Hf(IV)配位化合物的设计- MOCVD合成保护涂层的前驱体
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995557
A. Grafov, E. Mazurenko, G. Battiston, P. Zanella
{"title":"Design of Zr(IV) and Hf(IV) Co-Ordination Compounds - Precursors for MOCVD Synthesis of Protective Coatings","authors":"A. Grafov, E. Mazurenko, G. Battiston, P. Zanella","doi":"10.1051/JPHYSCOL:1995557","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995557","url":null,"abstract":"Design and creation of new materials with unusual, predictable or predeterminated properties become one of the most actual problems of modern applied chemistry. Main demands are discussed, which are made to chemical compounds used in CVD synthesis of functional materials. A division of volatile metal-containing precursors into main classes is given. On the basis of volatility and thermal stabiliti criteria elaborated at IGIC-NASU, we have designed, synthesized and characterized a series of new advanced precursors for Zr(IV) and Hf(IV). Their properties are compared to those of known species. A possibility of formation of requested properties and structure of final materials is shown.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80462832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor 原子层沉积反应器中前驱体流动与沉积的模拟
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995528
H. Siimon, J. Aarik
{"title":"Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor","authors":"H. Siimon, J. Aarik","doi":"10.1051/JPHYSCOL:1995528","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995528","url":null,"abstract":"A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analyzed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83900501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
MO CVD of Noble Metals 贵金属的MO CVD
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995556
I. Igumenov
{"title":"MO CVD of Noble Metals","authors":"I. Igumenov","doi":"10.1051/JPHYSCOL:1995556","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995556","url":null,"abstract":"The state of the art in research and application of processes of chemical vapour deposition of noble metal (Pt, Pd, Rh, Ir , Ru, Au) coatings is considered. Systematization of known experimental data on synthesis, thermal properties and saturated vapour pressure of volatile compounds of noble metals with organic ligands is provided. The processes of CVD of noble metals were analized from general requirements to precursors. It is shown that chelate or mixed-ligand noble metal complexes and, in particular β-diketonate derivatives due to their thermal properties are the most suitable for deposition of noble metal thick films.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90284323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Deposition of Platinum from Bis(Acetylacetonato)Platinum(II) 双(乙酰丙酮)铂沉积铂(II)
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995512
J. Arndt, L. Klippe, R. Stolle, G. Wahl
{"title":"Deposition of Platinum from Bis(Acetylacetonato)Platinum(II)","authors":"J. Arndt, L. Klippe, R. Stolle, G. Wahl","doi":"10.1051/JPHYSCOL:1995512","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995512","url":null,"abstract":"The evaporation and deposition process of Bis(acetylacetonato)platinum(II) (Pt(acac) 2 ) was examined in a computerized microbalance system, which allows the measuring of the mass of evaporating precursor and depositing layer simultaneously. The investigations were carried out in an argon-atmosphere and an argon/oxygen-atmosphere with pressure ranging from 250 Pa to 1000 Pa. The deposition kinetics were investigated in the temperature range between T dep = 523 K and T dep = 733 K. A strong dependence of the deposition rate on the pretreatment of the substrate was observed. Beginning the deposition on alumina with low deposition temperatures T dep an activation energy of 204 ± 9 kJ/mol was found. On platinum precoated substrates we observed higher deposition rates and lower values for the activation energy, if the precoating was carried out at temperature T pre > T dep . At long deposition times with T dep = const. the deposition rates on precoated substrates decreased to the values obtained without precoating at higher temperatures. This effect has not been clarified. In argon-atmosphere platinum layers containing carbon were deposited. Increasing the deposition temperature caused increased carbon contamination. The carbon can be removed by oxidation in air after the deposition. Platinum coatings without carbon contamination were obtained by adding oxygen during the deposition process.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86187612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Low Temperature Deposition of TiN Ceramic Material by Metal Organic and/or Plasma Enhanced CVD 金属有机和/或等离子体增强CVD低温沉积TiN陶瓷材料
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995587
C. Spee, J. Driessen, A. Kuypers
{"title":"Low Temperature Deposition of TiN Ceramic Material by Metal Organic and/or Plasma Enhanced CVD","authors":"C. Spee, J. Driessen, A. Kuypers","doi":"10.1051/JPHYSCOL:1995587","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995587","url":null,"abstract":"A review is presented describing the development of TiN-CVD from the classical, high temperature TiCl 4 /N 2 process, towards low temperature MOCVD processes. This development is presented from a chemical point of view. In addition to low pressure (LPCVD) and atmospheric pressure (APCVD) thermal processing, also plasma enhanced (PECVD) techniques are described. In the past few years production facilities for good quality TiN layers for wear resistant applications have come on the market. Production facilities for IC-technology applications of CVD-TiN are on the edge of breaking through. For both applications deposition temperatures have been reduced to 500-600°C. Research developments, have shown even lower deposition temperatures possible for TiN and Ti(C,N) layers.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81484832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Systematic Classification of LPCVD Processes LPCVD工艺的系统分类
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995533
J. Schlote, K. Tittelbach-Helmrich, B. Tillack, B. Kuck, T. Hünlich
{"title":"Systematic Classification of LPCVD Processes","authors":"J. Schlote, K. Tittelbach-Helmrich, B. Tillack, B. Kuck, T. Hünlich","doi":"10.1051/JPHYSCOL:1995533","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995533","url":null,"abstract":"A simple classification scheme of low pressure chemical vapor deposition processes is discussed which is based on only three different one-dimensional models of the radial film thickness distribution on silicon wafers processed in a conventional horizontal hot-wall reactor. Comparing theoretical predictions of these models with experimental results obtained from various LPCVD processes, a good qualitative agreement can be stated. For better quantitative accuracy additional effects must be taken into account. The stoichiometrically induced radial flow for deposition reactions not preserving the mole number of involved gaseous species is very important for the parameter evaluation as well as model identification.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73449653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Experimental design approach to development of a CVD ZrN coating 开发CVD ZrN涂层的实验设计方法
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995513
W. Russell
{"title":"Experimental design approach to development of a CVD ZrN coating","authors":"W. Russell","doi":"10.1051/JPHYSCOL:1995513","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995513","url":null,"abstract":"A design of experiments (DOE) approach has been used for the study of CVD ZrN coatings on cemented carbide substrates. DOE maximizes information gained from a set of experiments through statistical methods of design and analysis. A full factorial matrix of twenty experiments was designed using the variables (A) pressure, (B) temperature, (C) H 2 /ZrCl 4 and (D) N 2 /ZrCl 4 . Pressure ranged from 100 to 300 torr, temperature from 900 to 1050 °C, H 2 /ZrCl 4 from 20 to 60 and N 2 /ZrCl 4 from 5 to 25. The response for deposition rate is compared with theoretical prediction based on thermodynamic modeling of the system. A normal probability distribution was used to identify the variables that had a significant effect on deposition rate. These were found to be (B) temperature and (C) H 2 /ZrCl 4 . Interaction plots for (B) and (C) generated by the software clearly show this effect. These results are in agreement with the thermodynamic analysis and are similar to results for TiN coating. Other responses such as color, surface morphology, texture, adhesion and friction are reported.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77635863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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