Le Journal De Physique Colloques最新文献_第9页

High Quality YBa2Cu3O7-x Superconducting Thin Films Grown by MOCVD MOCVD生长高质量YBa2Cu3O7-x超导薄膜

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995543

C. Dubourdieu, J. Sénateur, O. Thomas, F. Weiss

{"title":"High Quality YBa2Cu3O7-x Superconducting Thin Films Grown by MOCVD","authors":"C. Dubourdieu, J. Sénateur, O. Thomas, F. Weiss","doi":"10.1051/JPHYSCOL:1995543","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995543","url":null,"abstract":"YBCO thin films have been grown by Metal Organic Chemical Vapour Deposition in a cold wall type reactor. The β-diketonates of yttrium, barium and copper are used as precursors. Films have been deposited on (001) MgO and (012) LaAlO 3 single crystalline substrates. The morphology is very dependant on the gas phase composition. Different oxygen partial pressures have been investigated. An increasing oxygen partial pressure - at a fixed deposition temperature - is found to increase the growth rate and to promote the growth of a-axis grains (grains with the c axis parallel to the substrate's surface). In our standard deposition conditions, Ti subs t rate holder = 875°C, P Total = 5 Torr, and P O2 = 2 Torr, high quality films are obtained, exhibiting T C ∼ 91 K (10%-90% of the resistive transition) and J C (77K) ∼ 5.10 6 A/cm 2 . A trilayer structure YBCO/Y 2 O 3 /YBCO (900A/100A/900A) has been grown on LaAlO 3 substrate, with the epitaxial relationship: (001) YBCO // or (001) Y2O3 . No misorientations have been found in the (a,b) plane. The trilayer exhibits a sharp superconducting transition (ΔT C = 0.4 K), with T C = 82.5 K, and J C (77 K) ∼ 10 6 A/cm 2 .","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89864748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Mass Flow Controlled Evaporation System 质量流量控制蒸发系统

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955113

H. Boer

引用次数: 19

Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors 外延硅化学气相沉积在桶状反应器中的模拟

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995530

M. Masi, S. Fogliani, S. Carrà

引用次数: 0

Volatile Metals Coordination Compounds as Precursors for Functional Materials Synthesis by CVD-Method 挥发性金属配位化合物作为cvd法合成功能材料的前驱体

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995564

E. Mazurenko, A. I. Gerasimchuk

引用次数: 1

Mass Spectrometric Study of Thermolysis Mechanism of Metal Acetylacetonates Vapour 金属乙酰丙酮酸蒸气热裂解机理的质谱研究

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995521

A. Bykov, A. E. Turgambaeva, I. Igumenov, P. P. Semyannikov

{"title":"Mass Spectrometric Study of Thermolysis Mechanism of Metal Acetylacetonates Vapour","authors":"A. Bykov, A. E. Turgambaeva, I. Igumenov, P. P. Semyannikov","doi":"10.1051/JPHYSCOL:1995521","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995521","url":null,"abstract":"The processes of thermal decomposition of aluminium(III) and scandium(III) acetylacetonates (Al(aa) 3 and Sc(aa) 3 ) were investigated in the 160-650°C temperature range using a high-temperature molecular beam source with mass spectrometric sampling of the gas phase composition directly at the outlet from the reaction zone. A scheme of thermal decomposition of aluminium(III) and scandium(III) acetylacetonates vapour is suggested. It is established that the common mechanism of thermolysis of these complexes is due to the commonness of electronic structure of ions Mg 2+ , Al 3+ , Sc 3+ and Hf 4+ . According to the scheme, the process proceeds along three parallel routes, one of them being possible only for complexes possessing more than two ligands, in this case the gaseous products resulting from cyclic dimerization of ligand fragments are formed. The influence of oxygen and hydrogen on the composition of the gaseous products and the mechanism of thermolysis of the complexes vapour are also established. From temperature curves, the effective values of kinetic parameters in Arrhenius equation are calculated for the first order reaction.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75340768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Deposition of MoO3 Films from a Volatile Molybdenyl Complex 挥发性钼基配合物沉积MoO3薄膜

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995559

B. Ballarin, E. Brescacin, G. Rizzi, E. Tondello

引用次数: 0

Remote microwave plasma enhanced chemical vapour deposition of SiO2 films: oxygen plasma diagnostic 远程微波等离子体增强SiO2薄膜化学气相沉积:氧等离子体诊断

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995574

C. Regnier, J. Desmaison, P. Tristant, D. Merle

引用次数: 4

Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor 原子层沉积反应器中前驱体流动与沉积的模拟

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995528

H. Siimon, J. Aarik

引用次数: 7

Deposition of Platinum from Bis(Acetylacetonato)Platinum(II) 双(乙酰丙酮)铂沉积铂(II)

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995512

J. Arndt, L. Klippe, R. Stolle, G. Wahl

{"title":"Deposition of Platinum from Bis(Acetylacetonato)Platinum(II)","authors":"J. Arndt, L. Klippe, R. Stolle, G. Wahl","doi":"10.1051/JPHYSCOL:1995512","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995512","url":null,"abstract":"The evaporation and deposition process of Bis(acetylacetonato)platinum(II) (Pt(acac) 2 ) was examined in a computerized microbalance system, which allows the measuring of the mass of evaporating precursor and depositing layer simultaneously. The investigations were carried out in an argon-atmosphere and an argon/oxygen-atmosphere with pressure ranging from 250 Pa to 1000 Pa. The deposition kinetics were investigated in the temperature range between T dep = 523 K and T dep = 733 K. A strong dependence of the deposition rate on the pretreatment of the substrate was observed. Beginning the deposition on alumina with low deposition temperatures T dep an activation energy of 204 ± 9 kJ/mol was found. On platinum precoated substrates we observed higher deposition rates and lower values for the activation energy, if the precoating was carried out at temperature T pre > T dep . At long deposition times with T dep = const. the deposition rates on precoated substrates decreased to the values obtained without precoating at higher temperatures. This effect has not been clarified. In argon-atmosphere platinum layers containing carbon were deposited. Increasing the deposition temperature caused increased carbon contamination. The carbon can be removed by oxidation in air after the deposition. Platinum coatings without carbon contamination were obtained by adding oxygen during the deposition process.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86187612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Refractory Coatings of C-Me-Si and C-Me-B-Si Systems for Protection of Carbon Materials (CM) 碳材料防护用C-Me-Si和C-Me-B-Si体系耐火涂料

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995597

S. G. Andryushin, A. Kasatkin

{"title":"Refractory Coatings of C-Me-Si and C-Me-B-Si Systems for Protection of Carbon Materials (CM)","authors":"S. G. Andryushin, A. Kasatkin","doi":"10.1051/JPHYSCOL:1995597","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995597","url":null,"abstract":"The three-zoned structure of the coatings for protection from high-temperature oxidation of carbon materials (CM) was grounded. The kinetic of formation and phase composition of diffusion coating C-Me-Si and C-Me-B-Si (Me = Ti, Zr or Hf) systems formed on CM (graphite and carbon/carbon materials) have been studied. The coating on CM received by using sequential metallization, boron- and silicium- deposition from dispersive solid-phased media. The rate of formation coatings of C-Me-Si by metallization and Si-deposition on CM decreases on the line: Ti--Zr--Hf, and the formation carbide layers MeC by diffusion metallization CM describes linear-parabolic law have been shown. The velocity of boron diffusion of the CM - MeC layer compositions is very little and it is increased on the line: Ti--Zr--Hf insignificantly. The formation of MeB 2 layer at the boriding are decreased of the velocity of siliciding. The coating proposed base three-zoned structure formed by compounds of C-Me-Si or C-Me-B-Si systems and intended for protection of CM from high-temperature oxidation (T>1400°C). The laws of phase form and destruction at high-temperature oxidation in air for these coatings are investigated.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77841280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0