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Le Journal De Physique Colloques最新文献

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Barium diketonates as precursors for HTSC thin films: structure and properties 二酮酸钡作为HTSC薄膜的前驱体:结构和性能
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995544
A. Drozdov, S. Troyanov
{"title":"Barium diketonates as precursors for HTSC thin films: structure and properties","authors":"A. Drozdov, S. Troyanov","doi":"10.1051/JPHYSCOL:1995544","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995544","url":null,"abstract":"Homoligand and mixed ligand barium diketonate complexes have been synthesized and characterized by X-ray structure determination. Homoligand complexes with dipivaloylmethane hexafluoroacetone and pivaloyltrifluoroacetone have oligigomeric or polymeric structure. The mixed complexes with additional anionic ligands (Cl - OH - , Piv - ) form pentanuclear complexes. The structures of the mixed ligand complexes with Lewis bases contain either mono or dinuclear chelates. Deoligomerization is accompanied by a decrease of the sublimation temperature and improves a storage stability of barium complexes used in MOCVD process for production of HTSC films.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87104520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
HREM Characterization of Interfaces in Thin MOCVD Superconducting Films MOCVD超导体薄膜界面的HREM表征
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955110
D. Dorignac, S. Schamm, C. Grigis, J. Santiso, G. Garcia, A. Figueras
{"title":"HREM Characterization of Interfaces in Thin MOCVD Superconducting Films","authors":"D. Dorignac, S. Schamm, C. Grigis, J. Santiso, G. Garcia, A. Figueras","doi":"10.1051/JPHYSCOL:19955110","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955110","url":null,"abstract":"This paper is concerned with high-T c superconducting compounds produced by metal-organic chemical vapour deposition. The nanostructure of different types of interfaces-yttria stabilized zirconia buffer /(1-102)-sapphire substrate, YBa 2 Cu 3 O 7-x film/Y 2 O 3 precipitates as well as YBa 2 Cu 3 O 7-x film/(001)-NdGaO 3 , -SrTiO 3 , and -MgO substrates - has been investigated by high resolution electron microscopy. The orientation relationships and the corresponding layer sequences across the interfaces have been determined with the aid of computer simulations.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74382106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Comparative Study of Iron-Based Film Deposition from Iron Pentacarbonyl at 248 nm and 488 nm 248 nm和488 nm五羰基铁沉积铁基薄膜的比较研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995581
I. Voicu, R. Alexandrescu, R. Cireasa, I. Morjan, D. Dumitras, S. Mulenko, A. N. Pogorelyǐ, A. Andrei
{"title":"A Comparative Study of Iron-Based Film Deposition from Iron Pentacarbonyl at 248 nm and 488 nm","authors":"I. Voicu, R. Alexandrescu, R. Cireasa, I. Morjan, D. Dumitras, S. Mulenko, A. N. Pogorelyǐ, A. Andrei","doi":"10.1051/JPHYSCOL:1995581","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995581","url":null,"abstract":"Thin film deposition by laser irradiation of Fe(CO) 5 at two radiation wavelengths (248 nm and 488 nm) was performed. A perpendicular geometry of irradiation was used. Maximum deposition rates of 14 A/s at λ = 248 nm and 1.5 A/s at λ = 488 nm were obtained, indicating a diffusion limited process. SEM analysis of film morphologies showed significant differencies in the nucleation and growth of films deposited at 248 nm and 488 nm. XPS surface analysis revealed a higher carbon content and carbidic phases in the surface of films deposited at 488 nm on SiO 2 (quartz) substrates. Oxidized surface Fe phases were found in films, with increasing the exposure time to laser radiation. The film properties are discussed in connection with irradiation conditions and specific mechanisms involved.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85823225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Volatile Metals Coordination Compounds as Precursors for Functional Materials Synthesis by CVD-Method 挥发性金属配位化合物作为cvd法合成功能材料的前驱体
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995564
E. Mazurenko, A. I. Gerasimchuk
{"title":"Volatile Metals Coordination Compounds as Precursors for Functional Materials Synthesis by CVD-Method","authors":"E. Mazurenko, A. I. Gerasimchuk","doi":"10.1051/JPHYSCOL:1995564","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995564","url":null,"abstract":"The applications of such coordination compounds (chelates) as metal β-diketonates in different CVD techniques were examined. It was shown that high chemical and physical characteristics of these compounds allow their favourable use comparatively with other volatile compounds. The general miles in volatility and thermal stability of β-diketonates and their fluorine derivatives were discussed. The ways of preparation of various functional materials with specific properties were determined.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75656644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Deposition of MoO3 Films from a Volatile Molybdenyl Complex 挥发性钼基配合物沉积MoO3薄膜
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995559
B. Ballarin, E. Brescacin, G. Rizzi, E. Tondello
{"title":"Deposition of MoO3 Films from a Volatile Molybdenyl Complex","authors":"B. Ballarin, E. Brescacin, G. Rizzi, E. Tondello","doi":"10.1051/JPHYSCOL:1995559","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995559","url":null,"abstract":"A volatile molybdenyl complex was used as precursor for MOCVD of MoO 3 films. Decomposition paths were investigated by thermal analysis. Good quality films were obtained on different substrates and characterized by XPS, UV-Vis, XRD and SEM analyses. The different electronic properties of the various films on different substrates were studied by photoemission experiments and compared with respect to the MoO 3 single crystal.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74160064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mass Spectrometric Study of Thermolysis Mechanism of Metal Acetylacetonates Vapour 金属乙酰丙酮酸蒸气热裂解机理的质谱研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995521
A. Bykov, A. E. Turgambaeva, I. Igumenov, P. P. Semyannikov
{"title":"Mass Spectrometric Study of Thermolysis Mechanism of Metal Acetylacetonates Vapour","authors":"A. Bykov, A. E. Turgambaeva, I. Igumenov, P. P. Semyannikov","doi":"10.1051/JPHYSCOL:1995521","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995521","url":null,"abstract":"The processes of thermal decomposition of aluminium(III) and scandium(III) acetylacetonates (Al(aa) 3 and Sc(aa) 3 ) were investigated in the 160-650°C temperature range using a high-temperature molecular beam source with mass spectrometric sampling of the gas phase composition directly at the outlet from the reaction zone. A scheme of thermal decomposition of aluminium(III) and scandium(III) acetylacetonates vapour is suggested. It is established that the common mechanism of thermolysis of these complexes is due to the commonness of electronic structure of ions Mg 2+ , Al 3+ , Sc 3+ and Hf 4+ . According to the scheme, the process proceeds along three parallel routes, one of them being possible only for complexes possessing more than two ligands, in this case the gaseous products resulting from cyclic dimerization of ligand fragments are formed. The influence of oxygen and hydrogen on the composition of the gaseous products and the mechanism of thermolysis of the complexes vapour are also established. From temperature curves, the effective values of kinetic parameters in Arrhenius equation are calculated for the first order reaction.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75340768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Remote microwave plasma enhanced chemical vapour deposition of SiO2 films: oxygen plasma diagnostic 远程微波等离子体增强SiO2薄膜化学气相沉积:氧等离子体诊断
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995574
C. Regnier, J. Desmaison, P. Tristant, D. Merle
{"title":"Remote microwave plasma enhanced chemical vapour deposition of SiO2 films: oxygen plasma diagnostic","authors":"C. Regnier, J. Desmaison, P. Tristant, D. Merle","doi":"10.1051/JPHYSCOL:1995574","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995574","url":null,"abstract":"Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). The silica films are produced by exciting oxygen in a microwave discharge while a mixture of 5% of silane diluted in argon is introduced downstream. In the afterglow, double Langmuir probe measurements and rotational temperatures deduced from optical emission spectroscopy (OES), show that the electron energy is transferred to the gas when the pressure increases (19 - 26 Pa). Therefore the electronic temperature decreases from 22000 to 11000 K and the gas temperature increases from 400 to 500 K. Moreover the microwave power (180 -480 W) has an influence on the deposition rate and on the quality of SiO 2 coatings (density and etch rate in an HF solution). This effect can be correlated with the increase in the electron density (0.7.10 10 to 3.7.10 10 cm -3 ) and of the gas temperature (400 to 460 K).","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73242521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors 外延硅化学气相沉积在桶状反应器中的模拟
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995530
M. Masi, S. Fogliani, S. Carrà
{"title":"Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors","authors":"M. Masi, S. Fogliani, S. Carrà","doi":"10.1051/JPHYSCOL:1995530","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995530","url":null,"abstract":"The epitaxial silicon chemical vapor deposition by SiCl 4 /H 2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusors, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72963688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Refractory Coatings of C-Me-Si and C-Me-B-Si Systems for Protection of Carbon Materials (CM) 碳材料防护用C-Me-Si和C-Me-B-Si体系耐火涂料
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995597
S. G. Andryushin, A. Kasatkin
{"title":"Refractory Coatings of C-Me-Si and C-Me-B-Si Systems for Protection of Carbon Materials (CM)","authors":"S. G. Andryushin, A. Kasatkin","doi":"10.1051/JPHYSCOL:1995597","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995597","url":null,"abstract":"The three-zoned structure of the coatings for protection from high-temperature oxidation of carbon materials (CM) was grounded. The kinetic of formation and phase composition of diffusion coating C-Me-Si and C-Me-B-Si (Me = Ti, Zr or Hf) systems formed on CM (graphite and carbon/carbon materials) have been studied. The coating on CM received by using sequential metallization, boron- and silicium- deposition from dispersive solid-phased media. The rate of formation coatings of C-Me-Si by metallization and Si-deposition on CM decreases on the line: Ti--Zr--Hf, and the formation carbide layers MeC by diffusion metallization CM describes linear-parabolic law have been shown. The velocity of boron diffusion of the CM - MeC layer compositions is very little and it is increased on the line: Ti--Zr--Hf insignificantly. The formation of MeB 2 layer at the boriding are decreased of the velocity of siliciding. The coating proposed base three-zoned structure formed by compounds of C-Me-Si or C-Me-B-Si systems and intended for protection of CM from high-temperature oxidation (T>1400°C). The laws of phase form and destruction at high-temperature oxidation in air for these coatings are investigated.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77841280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of Surface Layers Produced from a Metalorganic Titanium Compound Under Glow Discharge Conditions 辉光放电条件下金属有机钛化合物表面层的性能研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995584
T. Wierzchoń, J. Sobiecki
{"title":"Properties of Surface Layers Produced from a Metalorganic Titanium Compound Under Glow Discharge Conditions","authors":"T. Wierzchoń, J. Sobiecki","doi":"10.1051/JPHYSCOL:1995584","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995584","url":null,"abstract":"A prospective line in the development of thermo-chemical treatments under glow discharge conditions is to work out new techniques of producing multicomponent layers, e.g., composite layers, by combining various treatments, such as e.g. plasma nitriding and the PACVD method. The combined properties, appropriately selected and complementary to one another, of the single-component layers obtained using one of these processes, permit widening the application range of the layers. The paper specifies the conditions under which the multicomponent layers of Ti(OCN) type and composite layers of the nitrided + TiN or nitrided + Ti(OCN) type can be produced on steel. The structure and properties of the layers thus obtained are also described.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81313508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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