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Reactor Modelling and Analysis of Amorphous Hydrogenated Silicon Deposition by PECVD PECVD沉积非晶氢化硅的反应器建模与分析
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995536
A. Djelloul, B. Despax, J. Couderc, P. Duverneuil
{"title":"Reactor Modelling and Analysis of Amorphous Hydrogenated Silicon Deposition by PECVD","authors":"A. Djelloul, B. Despax, J. Couderc, P. Duverneuil","doi":"10.1051/JPHYSCOL:1995536","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995536","url":null,"abstract":"The behaviour of plasma reactors is complex and affected by a large number of parameters (temperature, pressure, flow rates, power, frequency, etc...). In that context, modeling constitutes a very convenient theoretical approach to analyze the complex parameters influences on the reactors overall performances, in the particular case studied here, amorphous hydrogenated silicon deposition rate profiles on the substrates. This particular study is devoted to a detailed analysis of the reactor behaviour in higher electrical power conditions. It demonstrates that, if relatively simple mechanisms for electron-molecule interactions and gas phase reactions can be used in low power conditions,this do not remain true in higher power conditions where a great number of reactions must be taken into account.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89404382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Barium diketonates as precursors for HTSC thin films: structure and properties 二酮酸钡作为HTSC薄膜的前驱体:结构和性能
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995544
A. Drozdov, S. Troyanov
{"title":"Barium diketonates as precursors for HTSC thin films: structure and properties","authors":"A. Drozdov, S. Troyanov","doi":"10.1051/JPHYSCOL:1995544","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995544","url":null,"abstract":"Homoligand and mixed ligand barium diketonate complexes have been synthesized and characterized by X-ray structure determination. Homoligand complexes with dipivaloylmethane hexafluoroacetone and pivaloyltrifluoroacetone have oligigomeric or polymeric structure. The mixed complexes with additional anionic ligands (Cl - OH - , Piv - ) form pentanuclear complexes. The structures of the mixed ligand complexes with Lewis bases contain either mono or dinuclear chelates. Deoligomerization is accompanied by a decrease of the sublimation temperature and improves a storage stability of barium complexes used in MOCVD process for production of HTSC films.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"131 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87104520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
HREM Characterization of Interfaces in Thin MOCVD Superconducting Films MOCVD超导体薄膜界面的HREM表征
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955110
D. Dorignac, S. Schamm, C. Grigis, J. Santiso, G. Garcia, A. Figueras
{"title":"HREM Characterization of Interfaces in Thin MOCVD Superconducting Films","authors":"D. Dorignac, S. Schamm, C. Grigis, J. Santiso, G. Garcia, A. Figueras","doi":"10.1051/JPHYSCOL:19955110","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955110","url":null,"abstract":"This paper is concerned with high-T c superconducting compounds produced by metal-organic chemical vapour deposition. The nanostructure of different types of interfaces-yttria stabilized zirconia buffer /(1-102)-sapphire substrate, YBa 2 Cu 3 O 7-x film/Y 2 O 3 precipitates as well as YBa 2 Cu 3 O 7-x film/(001)-NdGaO 3 , -SrTiO 3 , and -MgO substrates - has been investigated by high resolution electron microscopy. The orientation relationships and the corresponding layer sequences across the interfaces have been determined with the aid of computer simulations.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"59 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74382106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Comparative Study of Iron-Based Film Deposition from Iron Pentacarbonyl at 248 nm and 488 nm 248 nm和488 nm五羰基铁沉积铁基薄膜的比较研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995581
I. Voicu, R. Alexandrescu, R. Cireasa, I. Morjan, D. Dumitras, S. Mulenko, A. N. Pogorelyǐ, A. Andrei
{"title":"A Comparative Study of Iron-Based Film Deposition from Iron Pentacarbonyl at 248 nm and 488 nm","authors":"I. Voicu, R. Alexandrescu, R. Cireasa, I. Morjan, D. Dumitras, S. Mulenko, A. N. Pogorelyǐ, A. Andrei","doi":"10.1051/JPHYSCOL:1995581","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995581","url":null,"abstract":"Thin film deposition by laser irradiation of Fe(CO) 5 at two radiation wavelengths (248 nm and 488 nm) was performed. A perpendicular geometry of irradiation was used. Maximum deposition rates of 14 A/s at λ = 248 nm and 1.5 A/s at λ = 488 nm were obtained, indicating a diffusion limited process. SEM analysis of film morphologies showed significant differencies in the nucleation and growth of films deposited at 248 nm and 488 nm. XPS surface analysis revealed a higher carbon content and carbidic phases in the surface of films deposited at 488 nm on SiO 2 (quartz) substrates. Oxidized surface Fe phases were found in films, with increasing the exposure time to laser radiation. The film properties are discussed in connection with irradiation conditions and specific mechanisms involved.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85823225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films 低温等离子体增强CVD合成压电活性ZnO薄膜
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995586
T. V. Tabenskaya, V. P. Ovsyannikov, E. Mazurenko
{"title":"Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films","authors":"T. V. Tabenskaya, V. P. Ovsyannikov, E. Mazurenko","doi":"10.1051/JPHYSCOL:1995586","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995586","url":null,"abstract":"Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO 2 /Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA) 2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O 2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75590096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Heat-Resistance and Phase Composition of Ti-Si Coatings on Niobium 铌基Ti-Si涂层的耐热性及相组成
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995598
A. Kasatkin, S. U. Rybakov, G. M. Anurova
{"title":"Heat-Resistance and Phase Composition of Ti-Si Coatings on Niobium","authors":"A. Kasatkin, S. U. Rybakov, G. M. Anurova","doi":"10.1051/JPHYSCOL:1995598","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995598","url":null,"abstract":"A diffusion silicide coatings on refractory under thermal shock. A prospective method of improving their durability is the formation of multi-component coatings. Ti is one of the widespread oomponents of such coatings. In this work, process of simultaneous diffusion saturation of niobium by Ti and Si in powder mixtures has been investigated. The coatings can be divided into two basic types: Nb-Ti solid solutions and Nb and Ti silicides. The coatings of the first type obtained in Ti-Ti 5 Si 3 powder mixtures. The complex silicide layers were observed in the packs with higher silicon aotivity (Ti 5 Si 3 -TiSi and TiSi 2 -TiSi mixtures). The activities of Ti and Si have been shown to be principal controlling factors in coating phase in composition. The coatings allows to increase heat-resistance of the niobium and niobium alloys up to 2000°C (1,5 hour).","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75902087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films 等离子体增强非晶硒薄膜的化学气相沉积
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955131
P. Nagels, E. Sleeckx, R. Callaerts
{"title":"Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films","authors":"P. Nagels, E. Sleeckx, R. Callaerts","doi":"10.1051/JPHYSCOL:19955131","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955131","url":null,"abstract":"The preparation of layers of amorphous Se by plasma-enhanced CVD using the hydride H 2 Se as precursor gas is described. Using a mixture of 15 vol.% H 2 Se in H 2 , partly crystallized films were obtained. Information concerning the structure of the films was obtained from Raman spectroscopy. The spectra of amorphous Se indicated that the dominant molecular structure is the eight-membered ring and/or a chain with Se g molecular fragments. The optical transmission spectrum was recorded at different temperatures in the range 77-300 K. The optical bandgap E r was calculated from the optical absorption coefficients α using Tauc law: αhυ = C(hυ-E T ) 2 , where hυ is the photon energy. The temperature dependence of E T can be approximated by a linear relation: Δ/E T (T 2 -T 1 = -7.6 x 10 -4 x (T 2 -T 1 ).","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85599116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deposition of oxide layers by computer controlled 'injection-LPCVD' 计算机控制“注入- lpcvd”沉积氧化层
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955127
F. Felten, J. Sénateur, F. Weiss, R. Madar, A. Abrutis
{"title":"Deposition of oxide layers by computer controlled 'injection-LPCVD'","authors":"F. Felten, J. Sénateur, F. Weiss, R. Madar, A. Abrutis","doi":"10.1051/JPHYSCOL:19955127","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955127","url":null,"abstract":"A new process for stable generation of precursor's vapour pressure for CVD thin layers synthesis is experimented. The vapour pressure is controlled by sequential computer-driven injection of precise micro amounts of liquid in an evaporator, where flash volatilization occurs. During deposition, the precursors are maintained at room temperature under inert gases in an hermetically closed vessel: even thermally unstable precursors may be used. The results reported here are focused on the OMCVD deposition of Ta 2 O 5 . The growth rate increases up to 11 μm/h at 650°C (amorphous layers), and decreases above (crystallized layers). In a second part, we demonstrate the feasibility of Ta 2 O 5 /SiO 2 multilayers using two injectors.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80093913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Chemical Vapour Deposition of Thick Tungsten Coatings : Raman Measurements and Mass Transport Modelling 厚钨涂层的化学气相沉积:拉曼测量和质量输运模型
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995515
M. Pons, A. Benezech, P. Huguet, R. Gaufrès, P. Diez, D. Lafforet
{"title":"Chemical Vapour Deposition of Thick Tungsten Coatings : Raman Measurements and Mass Transport Modelling","authors":"M. Pons, A. Benezech, P. Huguet, R. Gaufrès, P. Diez, D. Lafforet","doi":"10.1051/JPHYSCOL:1995515","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995515","url":null,"abstract":"Thick tungsten coatings have been produced by chemical vapour deposition (CVD) from H 2 -WF 6 at a temperature in the range 773-1073 K under a reduced pressure. The experimental set-up is designed for in situ Raman analysis of the gas phase (temperature and WF 6 concentration) during the growth of tungsten coatings. A two dimensional mass transport model was proposed. It assumes a simple chemical pathway. Only the H 2 reduction of WF 6 has been taken into account. The major objective of the paper is to report on the comparison between (i) the experimental deposition rate and the deposition rate predicted by the model, (it) the values of temperature and gas phase composition deduced from Raman spectroscopy measurements and the values of these quantities obtained by numerical calculations. These comparisons have shown the predictive capabilities of the numerical modelling and that the temperature and WF 6 partial pressures can be recorded by a Raman equipment during the deposition process.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91516495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic layer-by-layer epitaxy of silicon and germanium using flash heating in CVD 在CVD中使用闪蒸加热的硅和锗的原子逐层外延
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955130
J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura, Y. Sawada
{"title":"Atomic layer-by-layer epitaxy of silicon and germanium using flash heating in CVD","authors":"J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura, Y. Sawada","doi":"10.1051/JPHYSCOL:19955130","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955130","url":null,"abstract":"Atomic layer-by-layer epitaxy control of Si and Ge in flash-heating CVD using SiH 4 and GeH 4 gases was investigated. Self-limiting SiH 4 reaction on the Ge surface results in Si atomic-layer formation at substrate temperatures below 300 °C even without the flash heating. In the case of Ge growth, by increasing the flash light intensity and the GeH 4 partial pressure, Ge atomic-layer growth on the wet-cleaned Si(100) was achieved with a single flash shot at 275°C. Using these growth controls, resonant tunneling diodes of Ge/Si,Ge 1 (50A)/Ge(50A) / Si 1 Ge 1 (50A)/Ge, in which the Si 1 Ge 1 layers were formed by alternately depositing single atomic-layers of Si and Ge, were fabricated, and clear negative resistance in the current-voltage characteristic was observed at 10 K. The current peaks were expected to be assigned to a hole resonant tunneling via light-hole bound state in the Ge quantum well. This fact suggests that the diode structure has abrupt Si 1 Ge 1 /Ge interfaces by employing a low-temperature atomic layer-by-layer growth process below 300°C.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86787787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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