Le Journal De Physique Colloques最新文献_第7页

Chemical Vapour Deposition for Optical Fibre Technology 光纤技术中的化学气相沉积

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955115

L. Cognolato

引用次数: 25

Growth of (YBaCuO)m/(PrBaCuO)n Superlattices by MOCVD MOCVD法生长(YBaCuO)m/(PrBaCuO)n超晶格

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995549

N. Didier, B. Chenevier, O. Thomas, J. Sénateur, F. Weiss, A. Gaskov

引用次数: 0

Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film 在硅和蓝宝石表面沉积YSZ层上MOCVD制备YBCO:中间层对超导膜质量的影响

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995551

G. Garcia, J. Casado, J. Llibre, M. Doudkowski, J. Santiso, A. Figueras, S. Schamm, D. Dorignac, C. Grigis, M. Aguiló

引用次数: 2

Atomic Layer Epitaxy Growth of AIN Thin Films AIN薄膜的原子层外延生长

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955120

Kai-Erik Elers, M. Ritala, M. Leskelä, Leena‐Sisko Johansson

引用次数: 10

Investigation of the substrate/epitaxial interface of Si/Si1−xGex layers grown by LPCVD LPCVD生长Si/Si1−xGex层衬底/外延界面的研究

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955106

R. Loo, L. Vescan, C. Dieker, D. Freundt, A. Hartmann, A. Mück

{"title":"Investigation of the substrate/epitaxial interface of Si/Si1−xGex layers grown by LPCVD","authors":"R. Loo, L. Vescan, C. Dieker, D. Freundt, A. Hartmann, A. Mück","doi":"10.1051/JPHYSCOL:19955106","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955106","url":null,"abstract":"The paper reports a study of the quality of the substrate/epilayer interface. Before growing the Si or Si/Si 1-x Ge x structures by low pressure chemical vapour deposition, Si(100) substrates were cleaned by a modified RCA-cleaning and just before epitaxy different ex-situ and in-situ processes were applied to remove the oxide layer grown on the wafer substrates in the last step of the RCA-cleaning. The effect of interfacial contamination on electrical and optical properties were studied. By a wet-chemical removal of the oxide layer an interfacial oxygen level of 1.3 x 10 13 atoms/cm 2 is found, while a thermal removal leads to an interfacial oxygen level below 6 x 10 12 atoms/cm 2 . In both cases carbon levels of (1-2)x10 14 atoms/cm 2 have been detected. By electrochemical capacitance-voltage profiling it was found that these contaminations are connected with electrically active donors. According to our investigations, electrochemical capacitance-voltage profiling is suitable to give a quick indication on the quality of the substrate/epitaxial interface. In addition, the removal of the oxide layer was investigated by high resolution electron energy loss spectroscopy on cleaned Si-surfaces.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81092094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermodynamic Analysis of the Chemical Vapor Deposition of Phosphorus Nitride (P3N5) Thin Films 化学气相沉积氮化磷(P3N5)薄膜的热力学分析

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995506

S. Eroglu

{"title":"Thermodynamic Analysis of the Chemical Vapor Deposition of Phosphorus Nitride (P3N5) Thin Films","authors":"S. Eroglu","doi":"10.1051/JPHYSCOL:1995506","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995506","url":null,"abstract":"Thermodynamic analysis of the chemical vapor deposition (CVD) of P 3 N 5 has been performed using the method of the minimization of the Gibbs' free energy in order to evaluate the PH 3 -NH 3 -N 2 , PCl 3 -NH 3 -H 2 and PBr 3 -NH 3 -H 2 gaseous mixtures for their potential to synthesize single-phase P 3 N 5 films at high yields. The conditions for the deposition of P 3 N 5 have been determined as a function of input reactant gas ratio of PX 3 /(PX 3 +NH 3 ) (X=H or Cl or Br) and deposition temperature at atmospheric pressure. A single phase P 3 N 5 is deposited at almost all reactant ratios and at temperatures below about 700 K when the PH 3 -NH 3 -N 2 system is used. The use of halide gas mixtures limits the formation of single phase P 3 N 5 to narrow regions of temperature and input reactant gas ratio. The gaseous species generally present in greatest abundance are H 2 , N 2 , NH 3 , PH 3 , HCl, P 4 , PCl 3 , P 2 , HBr, PBr 3 and PN. The thermodynamic analysis suggests that among the systems investigated here, the PH 3 -NH 3 -N 2 mixture is the most promising because simultaneously it gives the highest P 3 N 5 deposition yield and allows better control of the CVD process for the synthesis of P 3 N 5 films.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78497161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical Properties of Gallium Indium Nitride Films Prepared by Photo-Assisted MOVPE 光辅助MOVPE制备氮化镓铟薄膜的物理性质

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955139

T. Nagatomo, O. Omoto

引用次数: 0

Mass Spectrometric Study of Copper(II) β-Diketonates Vapour Thermolysis Mechanism and Kinetics 铜(II) β-二酮酸酯蒸气热裂解机理及动力学的质谱研究

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995525

A. E. Turgambaeva, A. Bykov, I. Igumenov

{"title":"Mass Spectrometric Study of Copper(II) β-Diketonates Vapour Thermolysis Mechanism and Kinetics","authors":"A. E. Turgambaeva, A. Bykov, I. Igumenov","doi":"10.1051/JPHYSCOL:1995525","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995525","url":null,"abstract":"Vapour thermolysis processes of copper(II) bis-chelate complexes with different β-diketones in the 160-640°C temperature range were studied by using the high-temperature source of a molecular beam with mass spectrometric recording of the gas phase composition directly at the outlet from the thermal reactor. Schemes of a heterogeneous decomposition of these compounds vapour were suggested on the basis of temperature dependences of the thermolysis gaseous products composition. It was established that the mechanisms of thermal conversion of copper(II) complexes with fluorinated and non-fluorinated ligands were not similar. A comparison of the thermal behaviour of the complexes with fluorinated and non-fluorinated ligands in vacuum, hydrogen and oxygen was carried out. Effective values of kinetic parameters in the Arrhenius equation were calculated for the first-order reaction on initial compound from the temperature dependence of the rate constant. The sequence of copper(II) complexes with β-diketones having different end substituents according to the thermal stability was revealed from the values of the thermal decomposition activation energy.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82884891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Modelling binary, Knudsen and transition regime diffusion inside complex porous media 复杂多孔介质内二元扩散、Knudsen扩散和过渡扩散模型

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995517

G. Vignoles

{"title":"Modelling binary, Knudsen and transition regime diffusion inside complex porous media","authors":"G. Vignoles","doi":"10.1051/JPHYSCOL:1995517","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995517","url":null,"abstract":"The problem of gaseous diffusion inside complex porous media arises in the modeling of many chemical processes (e.g. Chemical Vapor Infiltration (CVI), heterogeneous catalysis in porous catalysts, filtration, etc...). A program computing effective diffusivities in the bulk, Knudsen and transition regimes has been designed and tested, which uses a Monte-Carlo mean-square-displacement algorithm. The porous medium has been represented from a special interpretation of a computer 3D discretized image. Simulations were carried out in a typical case of complex structured porous medium: a stacking of tissues (e. g. 2D woven fiber preform for CVI-densified composite materials). The results are presented as tortuosity factors, i.e. deviations from an equivalent medium made of straight cylindrical pores. The evolution of the diffusivities with the geometrical parameters of the tissues, and with the stacking mode has also been studied. It appears that the perpendicular diffusivity is closely related to the proportion of matching holes between different layers of tissue. The intermediate regime appears for Knudsen numbers lying between 100 and 10 -1 . In this domain, the Bosanquet formula only gives a good description if the Knudsen number is multiplied by a factor γ = 1/4. This phenomenon had been reported, to a lesser extent, for unidirectional random fiber packings.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84810463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 42

Plasma-Assisted Deposition at Atmospheric Pressure 大气压下等离子体辅助沉积

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995569

J. Salge

引用次数: 73