Atomic Layer Epitaxy Growth of AIN Thin Films

Abstract

AlN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl 3 and NH 3 as precursors. A growth rate of 1.0 A/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.