Physical Properties of Gallium Indium Nitride Films Prepared by Photo-Assisted MOVPE

Abstract

The optical and electrical properties, crystallinity, and photoluminescence of GaInN epitaxial films were remarkably improved by photo-assited MOVPE using ultraviolet (UV) light from a deuterium (D 2 ) lamp. The dissociation of NH 3 is promoted by irradiation with a D 2 lamp and indiun atoms are effectively incorporated into the crystal lattice of GaInN. Good-quality epitaxial GaInN films were obtained at higher growth temperature of 800°C increasing the now rate of trimethylindium (TMIn). The photoluminescence peak intensity (band-edge emission) of GaInN films grown at 800°C is 14 times as great as that of 675°C.