挥发性钼基配合物沉积MoO3薄膜

B. Ballarin, E. Brescacin, G. Rizzi, E. Tondello
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引用次数: 0

摘要

采用挥发性钼基配合物作为moo3薄膜MOCVD的前驱体。通过热分析研究了分解路径。采用XPS、UV-Vis、XRD和SEM等方法对不同的衬底制备的薄膜进行了表征。通过光电发射实验研究了不同衬底上不同薄膜的不同电子性能,并与moo3单晶进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deposition of MoO3 Films from a Volatile Molybdenyl Complex
A volatile molybdenyl complex was used as precursor for MOCVD of MoO 3 films. Decomposition paths were investigated by thermal analysis. Good quality films were obtained on different substrates and characterized by XPS, UV-Vis, XRD and SEM analyses. The different electronic properties of the various films on different substrates were studied by photoemission experiments and compared with respect to the MoO 3 single crystal.
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