{"title":"外延硅化学气相沉积在桶状反应器中的模拟","authors":"M. Masi, S. Fogliani, S. Carrà","doi":"10.1051/JPHYSCOL:1995530","DOIUrl":null,"url":null,"abstract":"The epitaxial silicon chemical vapor deposition by SiCl 4 /H 2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusors, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors\",\"authors\":\"M. Masi, S. Fogliani, S. Carrà\",\"doi\":\"10.1051/JPHYSCOL:1995530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The epitaxial silicon chemical vapor deposition by SiCl 4 /H 2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusors, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.\",\"PeriodicalId\":17944,\"journal\":{\"name\":\"Le Journal De Physique Colloques\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Le Journal De Physique Colloques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JPHYSCOL:1995530\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:1995530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors
The epitaxial silicon chemical vapor deposition by SiCl 4 /H 2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusors, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.
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