Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors

Abstract

The epitaxial silicon chemical vapor deposition by SiCl 4 /H 2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusors, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.