Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor

Abstract

A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analyzed.