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Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride 激光诱导化学气相沉积碳氮化硅
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955112
W. Besling, P. Put, J. Schoonman
{"title":"Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride","authors":"W. Besling, P. Put, J. Schoonman","doi":"10.1051/JPHYSCOL:19955112","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955112","url":null,"abstract":"Laser-induced Chemical Vapour Deposition of silicon carbonitride coatings and powders has been investigated using hexamethyldisilazane (HMDS) and ammonia as reactants. An industrial CW CO 2 -laser in parallel configuration has been used to heat up the reactant gases. HMDS dissociates in the laser beam and reactive radicals are formed which increase rapidly in molecular weight by an addition mechanism. Dense polymer-like silicon carbonitride thin films and nanosized powders are formed depending on process conditions. Powder particles are deposited on a substrate by means of a thermal gradient. The primary particle size is about 30 nm. The particles are agglomerated. Depositions are characterized with spectroscopic and chemical analysis and correlated to some important laser process parameters. The powder deposit and the thin film consist of Si-N, Si-C and Si-O bonds according to FTIR-spectroscopy and X-ray Photo-Electron Spectroscopy. A residual amount of hydrogen is present. The material is amorphous (XRD) and has a polymer-like structure. The overall composition varies around Si 0.4 C 0.1 N 0.3 O 0.2 . The nitrogen content increases significantly by adding ammonia to the reactant gas flow. The high amount of oxygen is caused by hydrolysis and is a result of being exposed to air.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89252528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
OMCVD on Fluidized Divided Substrates : a Potential Method for the Preparation of Catalysts 流化分离基质上的OMCVD:一种有潜力的催化剂制备方法
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955122
R. Feurer, A. Reynes, P. Serp, P. Kalck, R. Morancho
{"title":"OMCVD on Fluidized Divided Substrates : a Potential Method for the Preparation of Catalysts","authors":"R. Feurer, A. Reynes, P. Serp, P. Kalck, R. Morancho","doi":"10.1051/JPHYSCOL:19955122","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955122","url":null,"abstract":"The OMCVD method has been used to deposit highly pure metal particles on porous divided substrates in order to prepare metal supported catalysts. A fluidized bed reactor has been especially designed and the requirements of CVD and fluidization have been taken into account to select convenient experimental conditions. Three organometallic compounds of rhodium have been selected and their thermal decomposition under He and He/H2 mixtures studied by infrared spectroscopy and on-line mass spectrometry analyses. The deposition are carried out at a total pressure of 100 Torr and substrate temperatures as low as 100°C. The solid deposits have been characterized by XPS, the size and dispersion of the particules have been determined by chemisorption methods or measured by TEM. These catalysts can be used without further treatment and their performances have been compared to those of conventionally prepared ones.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"141 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76962881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism of Thermal Decomposition of Palladium β-Diketonates Vapour on Hot surface 钯β-二酮酸酯蒸气热表面热分解机理研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995523
P. P. Semyannikov, V. Grankin, I. Igumenov, A. Bykov
{"title":"Mechanism of Thermal Decomposition of Palladium β-Diketonates Vapour on Hot surface","authors":"P. P. Semyannikov, V. Grankin, I. Igumenov, A. Bykov","doi":"10.1051/JPHYSCOL:1995523","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995523","url":null,"abstract":"The processes of thermal decomposition of palladium(II) β-diketonate complexes were investigated by a high-temperature mass spectrometric method with the use of a high-temperature molecular beam source. It was established that decomposition of the palladium complexes in gas phase processes proceeds by a radical mechanism and depends on temperature. For an additional proof of the existence of the radical particles the spin trap method was applied with a mass spectrometric identification of adducts. The following order of thermal stability of the complexes in gas phase was established: Pd(hfac) 2 > Pd(tfac) 2 > Pd(dpm) 2 > Pd(acac) 2 . This order is reverse to the thermal stability in a solid state. The thermal decomposition of Pd(aa) 2 and Pd(hfa) 2 complexes in deuterium showed that the deuterium presence strongly accelerates the decomposition processes.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75076955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Direct Deposition of Metal Film Patterns Using Nitrogen Laser 氮激光直接沉积金属薄膜图案
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995582
E. Reznikova, V. V. Chesnokov, G. I. Zharkova, I. Igumenov
{"title":"Direct Deposition of Metal Film Patterns Using Nitrogen Laser","authors":"E. Reznikova, V. V. Chesnokov, G. I. Zharkova, I. Igumenov","doi":"10.1051/JPHYSCOL:1995582","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995582","url":null,"abstract":"Rhenium, gold and platinum film micropatterns were obtained by the LCVD method on the surface of silicon and glass substrates from vapors of Re 2 (CO) 10 , (CH 3 ) 2 Au(dpm), Pt(hfa) 2 , respectively. The heated reaction chamber at atmospheric pressure with a flow of an inert gas-carrier was used. The high marginal sharpness and the thickness uniformity of deposited films was provided by the use of a powerful nanosecond pulse nitrogen laser (λ=337 nm), a projective system for delineation of the irradiation zone and by laser beam microscanning in the limits of the projective mask window. The metal pattern replicating the configuration of the projective mask window with a uniform 0.1-1 μm thickness was formed during 1-10 s. The writing rate of the straight metal lines was limited by the size of the irradiation zone and by the pulse repetition frequency and made of 150 μm/s. The smooth Re films were obtained with a good adhesion to the substrate and a surface resistivity of about 1 Ω/square. The films of Au and Pt were deposited as layers of microdrops whose coupling with one another and with the contact ground determined the film resistivity. The melting of Au and Pt films occurs during the laser-induced deposition process and influences the film growth dynamics and the film-to-substrate adhesion.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"37 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75364447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical Vapor Deposition of Hyperpure Polysilicon on Industrial Scale 工业规模超纯多晶硅的化学气相沉积
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955129
M. Domenici
{"title":"Chemical Vapor Deposition of Hyperpure Polysilicon on Industrial Scale","authors":"M. Domenici","doi":"10.1051/JPHYSCOL:19955129","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955129","url":null,"abstract":"The worldwide production of semiconductor grade polysilicon for electronic application has reached nowadays the amount of 10,000 T/y. The material is produced universally by CVD of extremely purified (chloro)silanes reacting with hydrogen. A modern plant will be described operating under conditions which are optimized for energy saving and ecological purposes (closed-loop operation). Other CVD applications in use for electronic materials are described, namely polysilicon deposition on wafer back, for gettering purposes, and epitaxial layer deposition on wafer front. Last one accounts for an annual production of more than 450 MSQI (million square inches).","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"66 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79438210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic layer-by-layer MOCVD of oxide superconductors 氧化物超导体的原子逐层MOCVD
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995545
S. Oda, Shuu'ichirou Yamamoto, A. Kawaguchi
{"title":"Atomic layer-by-layer MOCVD of oxide superconductors","authors":"S. Oda, Shuu'ichirou Yamamoto, A. Kawaguchi","doi":"10.1051/JPHYSCOL:1995545","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995545","url":null,"abstract":"A very smooth surface film of c-axis oriented YBa 2 Cu 3 Ox (YBCO) with roughness of less than monomolecular layer over 10μmx10μm, free of precipitates, has been obtained by atomic layer-by-layer metalorganic chemical vapor deposition (MOCVD) on a SrTiO 3 substrate at 650°C. A very large terrace length of 0.3-0.5μm may be due to the enhanced migration of growing species on the surface. The result of an attempt to prepare YBCO films with a larger terrace width surface using NdGaO 3 substrates is discussed. The correlation between boulder formation and dislocations in the substrate is clarified and methods for eliminating boulders are proposed. Very high superconductivity critical current densities of 3x10 7 A/cm 2 at 4.2K and 3x10 6 A/cm 2 at 77K have been obtained.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80560146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mass Spectrometric Study of the Gas Phase During Chemical Vapor Deposition of Pyrolytic Carbon 热解碳化学气相沉积气相质谱研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995508
F. Fau-Canillac, F. Carrere, A. Reynes, C. Vahlas, F. Maury
{"title":"Mass Spectrometric Study of the Gas Phase During Chemical Vapor Deposition of Pyrolytic Carbon","authors":"F. Fau-Canillac, F. Carrere, A. Reynes, C. Vahlas, F. Maury","doi":"10.1051/JPHYSCOL:1995508","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995508","url":null,"abstract":"The pyrolysis of CH 4 , of C 3 H 8 and of the mixture 20C 3 H 8 /80CH 4 was investigated in a hot wall CVD reactor by mass spectrometry. Experiments were conducted as a function of temperature and of surface-to-volume (S/V) ratio of the substrate. The main by-products of the pyrolysis were identified and reaction mechanisms were proposed taking into account homogenous decomposition/formation reactions. Cyclic species are possibly involved in the formation mechanism of pyrocarbon.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80293696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A study by In Situ FTIR Spectroscopy of the Decomposition of Precursors for the MOCVD of High Temperature Superconductors 高温超导体MOCVD前驱体分解的原位FTIR光谱研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995542
A. Kovalgin, Francoise Chabert-Rocabois, M. Hitchman, S. H. Shamlian, S. Alexandrov
{"title":"A study by In Situ FTIR Spectroscopy of the Decomposition of Precursors for the MOCVD of High Temperature Superconductors","authors":"A. Kovalgin, Francoise Chabert-Rocabois, M. Hitchman, S. H. Shamlian, S. Alexandrov","doi":"10.1051/JPHYSCOL:1995542","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995542","url":null,"abstract":"In this paper we report on a study by FTIR spectroscopy of the gas phase thermal decomposition of [Y(TMHD) 3 ], [Cu(TMHD) 2 ] and [Ba(TDFND) 2 .tetraglyme] under a total pressure of 10 Torr, for a temperature range 200 - 650°C, and in the absence and presence of oxygen. The variation of the decomposition characteristics for each of the complexes as a function of temperature, and as shown by changes in the absorption coefficients, are related to the molecular structures.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88042264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Chemical Vapor Deposition of ZrO2 Thin Films Using Zr(NEt2)4 as Precursor 以Zr(NEt2)4为前驱体的化学气相沉积ZrO2薄膜
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995561
A. Bastianini, G. Battiston, R. Gerbasi, M. Porchia, S. Daolio
{"title":"Chemical Vapor Deposition of ZrO2 Thin Films Using Zr(NEt2)4 as Precursor","authors":"A. Bastianini, G. Battiston, R. Gerbasi, M. Porchia, S. Daolio","doi":"10.1051/JPHYSCOL:1995561","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995561","url":null,"abstract":"By using tetrakis(diethylamido) zirconium [Zr(NEt 2 ) 4 ], excellent quality ZrO 2 thin films were deposited with high growth rates on alumina and glass substrates by chemical vapor deposition. The depositions were carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580°C and in the presence of oxygen. The as-grown films are colourless, smooth and well-adherent to the substrates. SIMS analysis evidenced pure ZrO 2 with a slight superficial contamination of hydrocarbons and nitrogen. The films have a tapered polycrystalline columnar structure well visible in SEM micrographs. From X-ray diffraction analysis. the monoclinic phase resulted as the major phase together with a small variable amount of tetragonal zirconia. Under 550°C the as-grown films resulted highly textured and were dominated by the (020) orientation. The films were annealed in the range 600-1000°C and the effect of annealing on the texture and on the phase and dimensions of the crystallites have been studied.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"58 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88975931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Chemical Vapour Deposition of AIN-Si3N4 Codeposits 化学气相沉积AIN-Si3N4共沉积层
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995593
F. Henry, B. Armas, C. Combescure, D. Thenegal, R. Flamand
{"title":"Chemical Vapour Deposition of AIN-Si3N4 Codeposits","authors":"F. Henry, B. Armas, C. Combescure, D. Thenegal, R. Flamand","doi":"10.1051/JPHYSCOL:1995593","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995593","url":null,"abstract":"","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79911604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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