工业规模超纯多晶硅的化学气相沉积

M. Domenici
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引用次数: 0

摘要

目前,全球电子用半导体级多晶硅产量已达10000吨/年。该材料普遍采用极纯氯硅烷与氢反应的气相沉积法生产。一个现代化的工厂将在节能和生态目的优化的条件下运行(闭环运行)。描述了用于电子材料的其他CVD应用,即在晶圆背面沉积多晶硅,用于吸光目的,以及在晶圆正面沉积外延层。最后一个占年产量超过450 MSQI(百万平方英寸)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Chemical Vapor Deposition of Hyperpure Polysilicon on Industrial Scale
The worldwide production of semiconductor grade polysilicon for electronic application has reached nowadays the amount of 10,000 T/y. The material is produced universally by CVD of extremely purified (chloro)silanes reacting with hydrogen. A modern plant will be described operating under conditions which are optimized for energy saving and ecological purposes (closed-loop operation). Other CVD applications in use for electronic materials are described, namely polysilicon deposition on wafer back, for gettering purposes, and epitaxial layer deposition on wafer front. Last one accounts for an annual production of more than 450 MSQI (million square inches).
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