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Thermodynamic Simulation of YBa2Cu3O6+x Film Growth Using Aerosol MOCVD 气溶胶MOCVD法生长YBa2Cu3O6+x薄膜的热力学模拟
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995516
F. Weiss, A. Pisch, C. Bernard, U. Schmatz
{"title":"Thermodynamic Simulation of YBa2Cu3O6+x Film Growth Using Aerosol MOCVD","authors":"F. Weiss, A. Pisch, C. Bernard, U. Schmatz","doi":"10.1051/JPHYSCOL:1995516","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995516","url":null,"abstract":"Future high power applications of high Tc superconducting materials (like YBa 2 Cu 3 O 6+x ) demand thick films with excellent electrical properties. The use of thin film deposition techniques is only possible when high deposition rates can be reached. A novel aerosol MOCVD technique using a liquid source has recently been developed and is very promising for this purpose. The precursor materials used are the β-diketonates of yttrium, barium and copper, dissolved in diethylene glycol dimethyl ether (diglyme) in various concentrations. A preliminary thermodynamic simulation of the process is a useful tool for a deeper understanding of the stability limits of the superconducting phase and the on-going reactions during deposition. The results of these simulations have been used to optimise the process conditions for YBa 2 Cu 3 O 6+x growth with good superconducting properties. A comparison between the simulation and the experimental results will be given and the influence of the main process parameters (deposition temperature, oxygen partial pressure, precursor concentration,...) will be shown.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77110940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors CVD制备的各向异性材料:有机分子导体和高Tc超导体
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995541
A. Figueras
{"title":"Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors","authors":"A. Figueras","doi":"10.1051/JPHYSCOL:1995541","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995541","url":null,"abstract":"HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors A. Figueras","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81080226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Production and Characterization of Quantum Nanostructures of Epitaxial Semiconductors 外延半导体量子纳米结构的制备与表征
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955137
M. Berti, A. Drigo, M. Mazzer, A. Camporese, G. Torzo, G. Rossetto
{"title":"Production and Characterization of Quantum Nanostructures of Epitaxial Semiconductors","authors":"M. Berti, A. Drigo, M. Mazzer, A. Camporese, G. Torzo, G. Rossetto","doi":"10.1051/JPHYSCOL:19955137","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955137","url":null,"abstract":"An experimental study has been performed using RBS and AFM characterization on InP islands grown by MOVPE on GaAs substrate, aiming to understand the influence of the growth parameters on the size distribution of the nanostructures. In the temperature range 580+650°C the total amount of deposited InP is independent of temperature which, on the contrary, affects the morphology of the growing islands.This work is part of a broader investigation on the feasibility of self organized growth to obtain nanosized semiconductor islands (Quantum Dots) by exploiting the mismatch-induced strain between substrate and epilayer in MOVPE deposition. In particular our data on the islands size are in very good agreement with preliminary indications of analytical and numerical models on the minimization of the total energy of the island-substrate system.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"117 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79943069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structure and Destruction of a Precursor : Mass-Spectrometric Evaluation of Creation of Functional Films with Predeterminated Composition 前驱体的结构和破坏:用质谱法评价预先确定成分的功能薄膜的形成
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995563
A. Grafov, I. Grafova, E. Mazurenko, L. I. Koval, S. Catinella, P. Traldi, G. Battiston, P. Zanella
{"title":"Structure and Destruction of a Precursor : Mass-Spectrometric Evaluation of Creation of Functional Films with Predeterminated Composition","authors":"A. Grafov, I. Grafova, E. Mazurenko, L. I. Koval, S. Catinella, P. Traldi, G. Battiston, P. Zanella","doi":"10.1051/JPHYSCOL:1995563","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995563","url":null,"abstract":"Among a variety of applications of organometallic compounds, their use as MOCVD precursors is one of the most extensive areas. To our minds, one of the most powerful and accurate methods for evaluation and prediction of thermal behaviour of the precursor is mass-spectrometry coupled with mass-analyzed ion kinetic energy spectrometry. Traditionally, both structure and composition of deposited materials and the precursor's thermal decomposition channels were controlled by gas-phase composition, the process temperature and pressure, i.e. by extemal factors. A possibility of such a control via inner factors - i.e. structure of a specially designed precursors is demonstrated for a series of new mixed-ligand organometallic compounds of In, Zr and Hf.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"181 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73936767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism of Interaction of Dimethylgold(III) Chelates Vapour with Hot Surface 二甲基金(III)螯合物蒸气与热表面相互作用机理研究
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995524
P. P. Semyannikov, V. Grankin, I. Igumenov, G. I. Zharkova
{"title":"Mechanism of Interaction of Dimethylgold(III) Chelates Vapour with Hot Surface","authors":"P. P. Semyannikov, V. Grankin, I. Igumenov, G. I. Zharkova","doi":"10.1051/JPHYSCOL:1995524","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995524","url":null,"abstract":"By the electron impact mass-spectrometric method, the temperature dependence of the gas phase structure was investigated at the thermal decomposition of dimethylgold chelate vapour of the general formula (CH 3 ) 2 AuL, where L = (RC(X)CHC(Y)R'); R = CH 3 , C(CH 3 ) 3 ; R' = CH 3 , C(CH 3 ) 3 , CF 3 ; X = O, NH; Y = O, S) in vacuum and deuterium environment at temperatures up to 350 °C and the saturated vapour pressure by 10 -4 -10 -2 Torr. The threshold temperature of the stability of comlexes vapour was determined. From the temperature dependence of the rate constant of decomposition processes the effective activation energy was obtained. It was shown that the initial act of the complexes destruction is break of the chelate cycle. The following decomposition process comlexes adsorbed at the surface lead to HL, L and CH 3 L, methane and ethane by competitive inside-and intermolecular processes. The presence of deuterium (or hydrogen) in the reaction zone courses to decrease onset temperatures for all investigated compounds.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"53 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84822371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Formation of Ti(OCN) Layers Under Glow Discharge Conditions 辉光放电条件下Ti(OCN)层的形成
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995540
J. Sobiecki, T. Wierzchoń
{"title":"Formation of Ti(OCN) Layers Under Glow Discharge Conditions","authors":"J. Sobiecki, T. Wierzchoń","doi":"10.1051/JPHYSCOL:1995540","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995540","url":null,"abstract":"By using a gaseous mixture composed of tetraisopropoxytitanium, nitrogen and hydrogen in PACVD process, we obtain Ti(OCN) layers of a good performance properties, such as a high hardness and good resistance to corrosion and to frictional wear. The optimum temperature of the process is 500°C. At higher temperatures, the surface microhardness decreases. When the process is carried out at 700°C, a surface layer which contain titanium cannot be obtained, only a diffusive oxycarbonitrided layer forms. Spectral investigations by optical emission spectroscopy have shown that the active particles that take part in the formation of the Ti(OCN) type layer are titanium ion Ti - , nitrogen particles: N - , N 2 ', NH, oxygen atoms and CN radicals coming from the gaseous atmosphere and also nitrogen from the pre-nitrided substrate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85603762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Substrate Effects on the APCVD Growth of Titanium Nitride Films 衬底对氮化钛薄膜APCVD生长的影响
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:19955103
S. Johnson, J. Owen
{"title":"Substrate Effects on the APCVD Growth of Titanium Nitride Films","authors":"S. Johnson, J. Owen","doi":"10.1051/JPHYSCOL:19955103","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955103","url":null,"abstract":"Titanium nitride thin films were deposited by atmospheric chemical vapour deposition in the temperature range 560°C to 660°C from titanium tetrachloride and ammonia in argon carrier gas and studied in terms of nucleation and growth, crystalline orientation and impurities. The films were deposited in a cold wall, atmospheric pressure CVD reactor designed to encourage laminar flow conditions and accommodate a number of different substrates under similar temperature and mass transport conditions. Characterisation of the films using scanning electron and atomic force microscopy showed an increase in nucleation density and decrease in surface roughness with temperature. Glancing-angle X-ray diffraction determined the crystallinity and orientation of the films with respect to the substrate and deposition temperature. Films deposited on Si 3 N 4 showed preferred orientation whereas those on glass showed random orientation. Energy dispersive spectroscopy calibrated by Rutherford backscattering spectroscopy indicated that the amount of chlorine and oxygen contamination decreased with increasing temperature. RBS also determined the stoichiometry of the titanium nitride films. Resistivity and optical studies were also carried out on titanium nitride thin films on glass to evaluate their suitability as heat mirrors.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91089744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Strained Si1-xGex/Si Dots and Wires Grown by Selective Epitaxy 选择性外延生长的应变Si1-xGex/Si点和线
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995503
L. Vescan, R. Loo, A. Souifi, C. Dieker, S. Wickenhauser
{"title":"Strained Si1-xGex/Si Dots and Wires Grown by Selective Epitaxy","authors":"L. Vescan, R. Loo, A. Souifi, C. Dieker, S. Wickenhauser","doi":"10.1051/JPHYSCOL:1995503","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995503","url":null,"abstract":"Selective epitaxial growth of Si 1-x Ge x was studied with the aim to fabricate quantum wires and dots. The selective deposition was performed by low pressure chemical vapor deposition with dichlorosilane and germane as precursors, at 0.1 Torr and 700°C in a radiation heated, cold wall, high vacuum, quartz reactor. Dislocation free strained dots and wires could be grown much thicker than the critical thickness for unpatterned area, because the critical thickness by formation of misfit dislocations increases when the window dimension is reduced. For x up to 20% it was found that for 10x10 μm 2 dots the critical thickness increases by more than 4 times. The tendency of facet formation was exploited to realize laterally confined multiple quantum well dots and wires with sizes down to 50 nm. Besides the emission from the (100) quantum well layers excitonic emissions from quantum well layers from flat {110} facets and from islands in the (100) and {311} facets were detected. All dots and wires luminesce stronly down to the lowest achieved dimension of 50 nm, the integral intensity exceeding that from the substrate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74216914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
CVD Copper Deposition from CuI(HFAC)TMVS Studied Through a Modeling Experimental Design 通过模拟实验设计研究崔(HFAC)TMVS的CVD铜沉积
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995560
J. Mermet, M. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau, F. Braud
{"title":"CVD Copper Deposition from CuI(HFAC)TMVS Studied Through a Modeling Experimental Design","authors":"J. Mermet, M. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau, F. Braud","doi":"10.1051/JPHYSCOL:1995560","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995560","url":null,"abstract":"Thin copper films were grown using hexafluoroacetylacetonato-copper(I) trimethylvinylsilane [Cu(hfac)tmvs].This precursor was delivered through a bubbler using hydrogen as carrier gas. Water vapour was used as reactant. The films were deposited on sputtered titanium nitride substrate, at wafer temperatures between 100°C and 210°C. An excess of water leads to the formation of copper oxide and films with a high resistivity. But no water leads to a poor nucleation and very low deposition rate. The way of injecting water plays an important role in the process: water at the beginning of the deposition time helps the nucleation and has to be stopped after a few minutes to avoid the oxidation of the film. An optimization of the operating conditions was carried out through the use of screening and modeling experimental designs. The influence of substrate temperature, carrier gas flow, water flow, water injection time and bubbler pressure was studied and leads to experimental laws, which are showing the dependence of the resistivity and the deposition rate with any of these parameters. An optimum working point was found, in term of resistivity. In that case, X-Ray Photoelectron Spectroscopy (XPS) indicate a pure copper phase. The resistivity was 1.9 μω.cm after annealling. The adhesion on TiN substrate is excellent according to the scotch tape test. Very high conformal deposition is obtained on 0,4 μm width, 1 μm deep.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"246 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75098820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Remote PECVD : a Route to Controllable Plasma Deposition 远程PECVD:可控等离子体沉积的途径
Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI: 10.1051/JPHYSCOL:1995568
S. Alexandrov
{"title":"Remote PECVD : a Route to Controllable Plasma Deposition","authors":"S. Alexandrov","doi":"10.1051/JPHYSCOL:1995568","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995568","url":null,"abstract":"Some aspects of RF remote plasma enhanced CVD including the main features of the technique, possibilities of overcoming disadvantages typical for conventional plasma processes, and possible directions to improve the remote plasma method are discussed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74689525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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