Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon : Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates

C. Tixier, P. Tristant, J. Desmaison, D. Merle
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引用次数: 3

Abstract

Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). In this process, a mixture of argon and hydrogen is excited in the microwave discharge while methane is injected in the afterglow. The substrates are radio-frequency (RF) biased in order to improve the film properties. Three configurations have been compared: microwave, RF, and mixed microwave-RF coupling. Optical emission spectroscopy allowed to compare intensities of a few spectral lines in the afterglow (CH, C 2 , H, and Ar lines) as a function of process conditions. Films have been characterised by infra-red (IR) spectroscopy and electron recoil detection analysis (ERDA). Stress in the films is in the range of -0.7 to -0.3 GPa (compressive). The influence of the hydrogen presence in the plasma, microwave power and radio-frequency bias voltage is discussed.
远程微波等离子体增强非晶碳的化学气相沉积:余辉和生长速率的光学发射光谱表征
采用微波等离子体增强化学气相沉积(RMPECVD)法制备了非晶碳膜。在这个过程中,氩和氢的混合物在微波放电中被激发,而甲烷在余辉中被注入。基板是射频偏置的,以改善薄膜的性能。比较了三种配置:微波、射频和混合微波-射频耦合。光学发射光谱学允许比较余辉中一些光谱线(CH, c2, H和Ar线)的强度作为工艺条件的函数。用红外光谱(IR)和电子反冲检测分析(ERDA)对薄膜进行了表征。薄膜中的应力在-0.7 ~ -0.3 GPa(压缩)范围内。讨论了等离子体中氢的存在、微波功率和射频偏置电压的影响。
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