{"title":"Cooling of a PWB With Irregular Populated Chips","authors":"Yiwu Ding, D. Agonafer, Elliot Short","doi":"10.1115/imece2000-2276","DOIUrl":"https://doi.org/10.1115/imece2000-2276","url":null,"abstract":"\u0000 A simple analysis and series of 3-D CFD simulations are carried out to estimate the temperature for the 208-pin QFP chips on a PWB. The main feature of the problem is the low primary velocity (0.09∼0.36 m/s), which implies that 3D effects, buoyancy force, PWB thermal conductivity and radiation will have a big impact on the temperature profile. This is verified by using commercial CFD simulation codes. The results show CFD tools are ideally suited for these classes of problems.\u0000 For the PWB under study, the worst case consists of an inlet air velocity of 0.09 m/s, no conduction in the board, and the board is laid horizontally, for which the buoyancy force is not well utilized). The resulting highest case temperature will be 110∼120C, which is close to the allowable case temperature 125C. Several heat spreader (heat sink) configurations are studied. One of them reduces the highest case temperature below 100C.\u0000 However, if the board conductivity is not too low (>0.5 W/mK), or if. the board is laid vertically and air is blown from bottom to top, there is no need for extra heat spreaders.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132952195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Experimentally Validated Vibration Fatigue Life Prediction Model for Ball Grid Array Solder Joint","authors":"T. E. Wong, F. Palmieri, L. Kachatorian","doi":"10.1115/imece2000-2252","DOIUrl":"https://doi.org/10.1115/imece2000-2252","url":null,"abstract":"\u0000 A newly developed methodology is used to support test validation of ball grid array (BGA) solder joint vibration fatigue life prediction model. This model is evolved from an empirical formula of universal slopes, which is derived from high-cycle fatigue test data using a curve fitting technique over 29 different materials of metals.\u0000 To develop the BGA solder joint vibration fatigue life prediction model, a test vehicles (TV), on which various sizes of BGA daisy-chained packages are soldered, is first designed, fabricated and subjected to random vibration tests with continuously monitoring the solder joint integrity. Based on the measurement results, a destructive physical analysis is then conducted to further verify the failure locations and crack paths of the solder joints. Next, a method to determine the stresses/strains of BGA solder joints resulting from exposure of the TV to random vibration environments is developed. In this method, a 3-D modeling technique is used to simulate the vibration responses of the BGA packages. Linear static and dynamic finite element analyses with MSC/NASTRAN™ computer code, combined with a volume-weighted average technique, are conducted to calculate the effective strains of the solder joints. In the calculation process, several in-house developed Fortran programs, in conjunction with the outputs obtained from MSC/NASTRAN™ static and frequency response analyses, are used to perform the required computations. Finally, a vibration fatigue life model is established with two unknown parameters, which can be determined by correlating the derived solder effective strains to the test data. This test-calibrated model is then recommended to serve as an effective tool to determine the integrity of the BGA solder joints during vibration. Selecting more study cases with various package sizes, solder ball configurations, vibration profiles to further calibrate this model is also recommended. An example of a 313-pin plastic and 304-pin ceramic BGAs is illustrated in the present study.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129556054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of the Interaction Between Thin-Film Fluid Hydrodynamics and Wire Vibration in Wafer Manufacturing Using Wiresaw","authors":"Liqun Zhu, M. Bhagavat, I. Kao","doi":"10.1115/imece2000-2269","DOIUrl":"https://doi.org/10.1115/imece2000-2269","url":null,"abstract":"\u0000 In free abrasive wafer slicing process (FAM) using wiresaw, hydrodynamic pressure exerted by the thin slurry film is crucial to the process of cutting and material removal from substrate surface. It affects the process quality by introducing viscous damping effect to the transverse motion of the wire. The pressure distribution in the slurry film is subjected to the interaction of multi-physical phenomena induced in the wire-saw cutting process, including the axially moving wire transverse vibration under high tension (20N to 35N), as well as the hydrodynamic lubrication behavior of the thin slurry film. In this paper, the interaction between thin-film hydrodynamics and wire vibration is modeled using the coupling of basic Reynold’s equation for fluid lubrication and the dynamic equation describing the transverse vibration of the translating wire. The time-variant hydrodynamic pressure field is used to obtain the dynamic damping force exerted on the wire by the thin slurry film. A computational model is constructed and typical parametric studies are conducted based on the simulation results. Numerical scheme of semi-discretization is carried out to simulate the dynamic multi-disciplinary model. Galerkin method of weighted residual is used to carry out the spatial finite element discretization of the governing non-linear partial differential equations of the system with certain boundary conditions. In addition, Newmark method is applied to perform the time integration of the semi-discretized computational model from initial conditions. The direct numerical simulation dynamically yields the profile of the slurry hydrodynamic pressure distribution and the wire vibration response as functions of process parameters, such as the static film thickness of the slurry flow, wire translating speed and wire tension. From the simulation results, it is shown that the presence of the slurry film in the wiresaw process is important in eliminating the undesirable vibration modes and reducing the amplitude of wire vibration.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129831668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal Cycling Guidelines for Automotive, Computer, Portable, and Implantable Medical Device Applications","authors":"R. Raghunathan, R. Pucha, S. Sitaraman","doi":"10.1115/imece2000-2246","DOIUrl":"https://doi.org/10.1115/imece2000-2246","url":null,"abstract":"\u0000 The objective of this work is to develop qualification guidelines for Flip-Chip on Board (FCOB) and Flip Chip Chip-Scale Packages (FCCSP) used in implantable medical devices, automotive applications, computer applications and portables, taking into consideration the thermal history associated with the field conditions. The accumulated equivalent inelastic strain per cycle and the maximum strain energy density have been used as damage parameters to correlate solder fatigue damage during field use and thermal cycling. The component assembly process mechanics, the time and temperature-dependent material behavior, and the critical geometric features of the assembly have been taken into consideration for developing the comprehensive virtual qualification methodology.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127065551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Stress Analysis of Wiresaw Slicing Piezoelectric Materials","authors":"Fuqian Yang","doi":"10.1115/imece2000-2270","DOIUrl":"https://doi.org/10.1115/imece2000-2270","url":null,"abstract":"\u0000 Using linear piezoelectricity theory, the stress and electric potential fields in a half infinite piezoelectric material under anti-plane mechanical loading in wiresaw slicing process has been studied by using appropriate boundary conditions and contact mechanics. Both electric field and electric displacement field are singular at the edges of the contact zone between wire and workpiece. The singularity of electric displacement arises from the electric loading and electro-mechanical interaction. Similar to the conventional contact mechanics, stress singularity occurs due to the contribution of both mechanical and electric loading. At a given mechanical loading, electric loading can either increase or decrease the stress applied to the piezoelectric half space in the slicing process, which depends on the relative direction of the electric field to that of mechanical loading.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"38 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130733513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Interfacial Delamination Propagation in Multi-Layered High-Density Wiring Electronic Packaging Structures","authors":"Hurang Hu, W. Xie, S. Sitaraman","doi":"10.1115/imece2000-2251","DOIUrl":"https://doi.org/10.1115/imece2000-2251","url":null,"abstract":"\u0000 One of the most common failure modes in multi-layered electronic packaging structures is interfacial delamination. The objective of this research is to examine the possibilities of interfacial delamination in a next-generation electronic packaging structure under thermal loading. A sophisticated analytical model has been developed to determine energy release rate and stress intensity factor for delamination propagation. The model takes into consideration the temperature-dependent material properties as well as direction-dependent material properties. Although delamination between two adjacent layers is studied, the model takes into consideration the effect of all dielectric, metallization, and substrate layers in the multi-layered structure.\u0000 Assuming that an initial delamination exists between the base layer and the Copper metallization layer, the present work studies the propagation of delamination. In the analytical model, the base layer is modeled as an orthotropic thermo-elastic material. Copper and the polymer dielectric materials are modeled as isotropic thermo-elastic material. For the Copper/base layer interface, the variation of bimaterial constant (ε) with temperature is obtained through the analytical model. The effect of some key parameters, such as materials Young’s modulus, coefficient of thermal expansion, and the base layer thickness on energy release rate is presented. Design recommendations for improved thermo-mechanical reliability are proposed.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124409404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mathematical Model for Thermostatic Expansion Valve","authors":"Yiwu Ding, D. Agonafer, R. Schmidt","doi":"10.1115/imece2000-2275","DOIUrl":"https://doi.org/10.1115/imece2000-2275","url":null,"abstract":"\u0000 A methodology to generate the mathematical model to simulate the steady-state operation of the thermostatic expansion valves is described. Such a model is necessary in understanding the operation of a refrigeration system used in cooling electronics. The model treats the mutual dependence between the valve’s throttling and control functions, and requires a few experimentally determined parameters. Specifically, the characteristic of the valve changes with the evaporating temperature, and a simple model to represent this influence on the valve is suggested.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114730288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Micro-Mechanics of Creep-Fatigue Damage in Pb-Sn Solder Due to Thermal Cycling","authors":"P. Sharma, A. Dasgupta","doi":"10.1115/imece2000-2260","DOIUrl":"https://doi.org/10.1115/imece2000-2260","url":null,"abstract":"\u0000 This paper presents a micro-mechanistic approach for modeling fatigue damage initiation due to cyclic creep in eutectic Pb-Sn solder. Damage mechanics due to cyclic creep is modeled with void nucleation, void growth and void coalescence model based on micro-structural stress fields. Micro-structural stress states are estimated under viscoplastic phenomena like grain boundary sliding and its blocking at 2nd phase particles, and diffusional creep relaxation. A conceptual framework is provided to quantify the creep-fatigue damage due to thermo-mechanical cycling. Some parametric studies are provided to better illustrate the utility of the developed model.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121470143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal Aging Effect on the Ball Shear Strength of Pb-Free Solders on a Ceramic Substrate With Pd/Ag Surface Metallization","authors":"Xingjia Huang, S. Lee, Wan Sze Tse","doi":"10.1115/imece2000-2259","DOIUrl":"https://doi.org/10.1115/imece2000-2259","url":null,"abstract":"\u0000 In the present study, solder balls of two Pb-free solder alloys, 95.5Sn-3.8Ag-0.7Cu and 91.8Sn-3.4Ag-4.8Bi, were reflowed on a ceramic substrate with the surface metallization of Pd/Ag. The specimens were subjected to thermal aging for 250 hours at the temperatures of 85°C, 125°C and 150°C, respectively. For comparison, specimens with 63Sn-37Pb solder were also fabricated and tested. Ball shear tests were performed to evaluate the effect of thermal aging on various solders. In general, the testing results indicated that the shear strength of solder balls decreased gradually with respect to the increase of thermal aging temperature. The shear strength of 95.5Sn-3.8Ag-0.7Cu solder balls was found to be least sensitive to the thermal aging. Besides, it was identified that the predominant failure mode in the ball shear tests was the fracture at the interface between the Pd/Ag metallization and the ceramic substrate.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121536392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wafer Level Underfill Processing","authors":"L. Nguyen, C. Quentin, Phuong Nguyen","doi":"10.1115/imece2000-2247","DOIUrl":"https://doi.org/10.1115/imece2000-2247","url":null,"abstract":"\u0000 Underfill materials play a major role in the reliability of flip chip packages. These adhesives have been the subject of much research and development in the last few years, and much improvement in material performance has been obtained. However, the assembly method still remains unchanged, with the underfill being dispensed at the individual die level after flip chip reflow. Even with the arrival of “no-flow” underfills, assembly still requires depositing the underfill material onto the flip chip site prior to positioning the flip chip die. Processing underfill at the wafer level brings in a new paradigm shift to the area of flip chip packaging. Precoating the wafer with the underfill will create significant savings in both time and money. The application cycle time of the wafer level process becomes equivalent to a single dispensing operation for all the good dies on the wafer.\u0000 This paper will present results obtained with screen printing used as the application method for the wafer level process. An experimental underfill was printed onto un-bumped silicon wafers and cured, and the resultant films were analyzed. Process conditions affecting film thickness and surface roughness were evaluated. Preliminary results with bumped wafers are also discussed.","PeriodicalId":179094,"journal":{"name":"Packaging of Electronic and Photonic Devices","volume":"7 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123722349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}