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Proceedings. International Semiconductor Conference最新文献

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About the determination of the shunt resistance of the metal/porous silicon/p-silicon structures 关于金属/多孔硅/对硅结构并联电阻的测定
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105878
A. Dafinei, I. Munteanu, A. Dafinei
{"title":"About the determination of the shunt resistance of the metal/porous silicon/p-silicon structures","authors":"A. Dafinei, I. Munteanu, A. Dafinei","doi":"10.1109/SMICND.2002.1105878","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105878","url":null,"abstract":"Considering the real structure of porous silicon the paper proposes a modelling of the electrical resistance structure of a porous silicon layer prepared on moderately resistive pSi substrate. The interpretation of electrical measurements over the PS/Si structure considering an electrical scheme with distributed elements allows determining the shunt resistance of the heterojunction.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114989499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures 半导体多层结构磁输运表征的最大熵迁移谱分析
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105881
M. Myronov, S. Kiatgamolchai, O. Mironov, V.G. Kantser, E. Parker, T. Whall
{"title":"Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures","authors":"M. Myronov, S. Kiatgamolchai, O. Mironov, V.G. Kantser, E. Parker, T. Whall","doi":"10.1109/SMICND.2002.1105881","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105881","url":null,"abstract":"The maximum entropy mobility spectrum analysis (ME-MSA) method has been developed on the basis of a maximum entropy (ME) principle. It allows one to calculate a smooth electrical conductivity versus mobility plot (\"mobility spectrum\") from the classical magnetoconductivity tensor in semiconductor multilayer structures. The advantages of the ME-MSA as compared to the MSA are demonstrated using a synthetic data set.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116926725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Variable-gain inversion layer emitter phototransistor in CMOS technology CMOS技术中的可变增益反转层发射极光电晶体管
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105835
N. Jankovic, E. Jovanovic
{"title":"Variable-gain inversion layer emitter phototransistor in CMOS technology","authors":"N. Jankovic, E. Jovanovic","doi":"10.1109/SMICND.2002.1105835","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105835","url":null,"abstract":"The vertical bipolar phototransistor in CMOS technology employing the inversion emitter concept has been analysed by simulation and experiment. It is found that the inversion emitter substantially increases current gain, particularly at low current levels, which yields a high output photo-current. In addition, current gain and photo-current magnitude can be controlled by the external gate voltage which gives the potential for a number of novel applications.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125950276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigations on phosphosilicate glass by using IR, AFM and cluster model calculation 利用红外光谱、原子力显微镜和聚类模型计算对磷硅酸盐玻璃进行了研究
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105849
M. Bercu, C. Moldovan, R. Gavrila, B. Bercu, O. Ligor
{"title":"Investigations on phosphosilicate glass by using IR, AFM and cluster model calculation","authors":"M. Bercu, C. Moldovan, R. Gavrila, B. Bercu, O. Ligor","doi":"10.1109/SMICND.2002.1105849","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105849","url":null,"abstract":"Many applications of phosphosilicate glass (PSG) in microtechnology and in micro-machining, require the control of phosphorous content. This study is based mainly on optical spectroscopy and quantum calculations. It focuses on P=O bond formation and the corresponding changes of the chemical oxide structure. The characterisation of CVD thin films deposited on c-Si has been related to the dependence between the partial pressure of PH/sub 3/ and the incorporated content of phosphorous in PSG films by means of IR spectroscopy. AFM indicated spongeous structure formation for aged samples, as a result of water absorption which leads to hydrolysis of P=O and O-SiO/sub 3/ bonds. The cluster model approach based on the LCAO Hartree Fock theory was used to calculate the vibration modes for the proposed surrounding of P=O and O-P-O groups by using specific atomic cluster models. This contribution deals with some links between the chemical structures of the nearest environment of phosphorous atoms in PSG films and the features shown by IR spectra.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128742731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectroscopical study of As/sub 2/S/sub 3/ glasses doped with Dy, Sm and Mn 掺Dy、Sm、Mn的As/sub 2/S/sub 3/玻璃的光谱研究
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105850
M. Iovu, S. Shutov, A. Andriesh, E. Kamitsos, C. P. Varsamis, A. Seddon, D. Furniss, M. Popescu
{"title":"Spectroscopical study of As/sub 2/S/sub 3/ glasses doped with Dy, Sm and Mn","authors":"M. Iovu, S. Shutov, A. Andriesh, E. Kamitsos, C. P. Varsamis, A. Seddon, D. Furniss, M. Popescu","doi":"10.1109/SMICND.2002.1105850","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105850","url":null,"abstract":"The effect of rare earth (Dy and Sm) and transition metal (Mn) luminescent impurities on the optical properties of As/sub 2/S/sub 3/ and As/sub 2/Se/sub 3/ glasses is studied in a wide spectral region. Raman, IR, band-to-band and edge absorption spectroscopies are employed to obtain information about the incorporation of impurity ions in the host glass structure and the corresponding changes in intrinsic optical characteristics. In the fundamental absorption region, a reflectivity maximum at 2.98 eV shows blue (Dy, Sm) or red (Mn) shift depending on the electronegativity of the impurity, in accordance with the corresponding variations of the glass structure. Some variations of the characteristic Raman spectra under light exposure and thermal ageing of doped glasses were registered. The observed effects of metal dopants on the As/sub 2/S/sub 3/ glass are discussed in connection with the expected behaviour of the impurities in the glass.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130169654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thickness dependent properties of CdS/CdTe hetero-photo-elements CdS/CdTe异质光元件的厚度相关性质
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105836
T. Potlog, J. Sites, P. Gashin, L. Ghimpu
{"title":"Thickness dependent properties of CdS/CdTe hetero-photo-elements","authors":"T. Potlog, J. Sites, P. Gashin, L. Ghimpu","doi":"10.1109/SMICND.2002.1105836","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105836","url":null,"abstract":"The analysis of the I-V characteristics of a CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating, J/sub sc/=24.8 mA/cm/sup 2/, V/sub oc/=0.82 V, FF=0.48, /spl eta/=9.76% are obtained in the case when time of deposition of CdTe is 3.5 min. The photoresponse decreases with increasing CdTe thickness. The photosensitivity covers the wavelength range from 0.50 /spl mu/m to 0.86 /spl mu/m for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3.5 min.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"555 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132480848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Giant magneto-resistance in multilayer amorphous films 多层非晶膜中的巨磁电阻
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105818
M. Avram, C. Voitincu, A. Angelescu, I. Kleps
{"title":"Giant magneto-resistance in multilayer amorphous films","authors":"M. Avram, C. Voitincu, A. Angelescu, I. Kleps","doi":"10.1109/SMICND.2002.1105818","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105818","url":null,"abstract":"Experiments reveal that the additions of Ag and Au have dramatic effects on GMR multilayer magnetotransport properties and single layer surface morphology. To understand the layer-by-layer growth phenomenon of GMR multilayers, depending upon the nonferromagnetic conducting layer composition, multiple samples of each growth step have been deposited by using an RF diode sputter deposition system.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126502536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical and optical behavior of the SiC photodetectors 碳化硅光电探测器的电学和光学特性
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105829
F. Draghici, F. Mitu, G. Brezeanu, M. Badila, C. Boianceanu, P. Agache, I. Enache
{"title":"Electrical and optical behavior of the SiC photodetectors","authors":"F. Draghici, F. Mitu, G. Brezeanu, M. Badila, C. Boianceanu, P. Agache, I. Enache","doi":"10.1109/SMICND.2002.1105829","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105829","url":null,"abstract":"The paper presents an electrical and optical investigation of Schottky transparent contact UV detectors built on SiC. The device spectral analysis evinced a relatively constant low sensitivity in the 270-360 nm range completed with a peak higher sensitivity centered on 380 nm for 360-400 nm ranges.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121198464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Novel 3D SOI RF power MOSFET 新型3D SOI射频功率MOSFET
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105840
G.P.V. Pathirana, F. Udrea, A. Rusu
{"title":"Novel 3D SOI RF power MOSFET","authors":"G.P.V. Pathirana, F. Udrea, A. Rusu","doi":"10.1109/SMICND.2002.1105840","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105840","url":null,"abstract":"In this paper we present simulated results of a novel silicon RF LDMOSFET on SOI technology based on a 3D structure. It has a breakdown voltage above 80 V and a cut-off frequency around 6.5 GHz. Application of the RESURF concept to the third dimension raises the device breakdown voltage and current handing capability leading to better RF performance.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116539668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microsystems: visions for 2010 微系统:2010年愿景
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105789
A. El-Fatatry
{"title":"Microsystems: visions for 2010","authors":"A. El-Fatatry","doi":"10.1109/SMICND.2002.1105789","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105789","url":null,"abstract":"Advanced and developing societies are increasingly dependant on the availability of information in order to sustain an efficient infrastructure and to improve the quality of life for all its citizens. The European Union's vision of a society where information is available unobtrusively and where the environment is ambient in its intelligence has, at its core, a comprehensive network of information retrieval, processing and delivery. This presentation represents the author's views on some of the visionary scenarios discussed by members of the NEXUS User-Supplier-Clubs in response to the European Commission's call for expressions-of-interest (EoIs) aimed at identifying research topics in preparation for the 6th Framework Programme for Research, with particular reference to the role of microsystems and microtechnology, the drive towards systems integration, and the use of nanotechnology.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133962705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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