{"title":"新型3D SOI射频功率MOSFET","authors":"G.P.V. Pathirana, F. Udrea, A. Rusu","doi":"10.1109/SMICND.2002.1105840","DOIUrl":null,"url":null,"abstract":"In this paper we present simulated results of a novel silicon RF LDMOSFET on SOI technology based on a 3D structure. It has a breakdown voltage above 80 V and a cut-off frequency around 6.5 GHz. Application of the RESURF concept to the third dimension raises the device breakdown voltage and current handing capability leading to better RF performance.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel 3D SOI RF power MOSFET\",\"authors\":\"G.P.V. Pathirana, F. Udrea, A. Rusu\",\"doi\":\"10.1109/SMICND.2002.1105840\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present simulated results of a novel silicon RF LDMOSFET on SOI technology based on a 3D structure. It has a breakdown voltage above 80 V and a cut-off frequency around 6.5 GHz. Application of the RESURF concept to the third dimension raises the device breakdown voltage and current handing capability leading to better RF performance.\",\"PeriodicalId\":178478,\"journal\":{\"name\":\"Proceedings. International Semiconductor Conference\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. International Semiconductor Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2002.1105840\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Semiconductor Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2002.1105840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we present simulated results of a novel silicon RF LDMOSFET on SOI technology based on a 3D structure. It has a breakdown voltage above 80 V and a cut-off frequency around 6.5 GHz. Application of the RESURF concept to the third dimension raises the device breakdown voltage and current handing capability leading to better RF performance.
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