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The structure of vitreous As-S alloys studied by mass spectrometry and computational chemistry program 用质谱法和计算化学程序研究了玻璃As-S合金的结构
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105848
A. Popescu
{"title":"The structure of vitreous As-S alloys studied by mass spectrometry and computational chemistry program","authors":"A. Popescu","doi":"10.1109/SMICND.2002.1105848","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105848","url":null,"abstract":"Chalcogenide noncrystalline semiconductors are useful for the development of integrated optic components. The needed refractive index is usually obtained by changing the composition of the material. In this report, the structure and photo induced phenomena are studied by means of mass spectrometry and a computational program that permits us to explain the variations of the refractive index.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123735644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blue/ultraviolet sensitive detector on <100> silicon membrane 硅膜上的蓝/紫外敏感探测器
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105833
M. Purica, E. Budianu, M. Elena
{"title":"Blue/ultraviolet sensitive detector on <100> silicon membrane","authors":"M. Purica, E. Budianu, M. Elena","doi":"10.1109/SMICND.2002.1105833","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105833","url":null,"abstract":"In this paper, attention has been focused on two major aspects: fabrication of a low dark silicon photodiode with enhanced responsivity for blue/ultraviolet radiation (/spl lambda//sub /spl isin// 200-400 /spl mu/m) by arsenic diffusion, using as planar source arsenic doped oxide deposited by LPCVD on the active area, and development of a post process step for obtaining a <100> silicon membrane of /spl sim/10 /spl mu/m by using aqueous alkaline etching (KOH) without modifying the opto-electrical parameters of the photodiode structures.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125518475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The correlation between luminescence and transport in systems of silicon nano-crystallites 硅纳米晶体系中发光与输运的关系
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105811
I. Balberg
{"title":"The correlation between luminescence and transport in systems of silicon nano-crystallites","authors":"I. Balberg","doi":"10.1109/SMICND.2002.1105811","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105811","url":null,"abstract":"The transport in a system of silicon nanocrystals embedded in an insulating matrix is shown to behave as in granular metals. The percolation aspect of this transport was demonstrated clearly in our work, while the tunneling-Coulomb blockade aspects that were suggested by others, are indirectly manifested by the relation between the photoluminescence and the transport properties.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126851389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low voltage TVS devices: design and fabrication 低压电视装置:设计与制造
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105844
J. Urresti, S. Hidalgo, D. Flores, J. Roig, J. Rebollo, J. Millán
{"title":"Low voltage TVS devices: design and fabrication","authors":"J. Urresti, S. Hidalgo, D. Flores, J. Roig, J. Rebollo, J. Millán","doi":"10.1109/SMICND.2002.1105844","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105844","url":null,"abstract":"This paper addresses the optimisation of advanced transient voltage suppressor (TVS) devices for integrated circuit (IC) protection against electrostatic discharge (ESD) by means of technological and electrical simulations. An N/sup +/PP/sup +/N/sup +/ bipolar technology for low voltage (less than 3.3 V) TVs has been designed by optimising the trade-off between voltage capability and leakage current.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122456305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
GaAs micromachining for millimeter wave applications 用于毫米波应用的砷化镓微加工
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105793
A. Muller, G. Constantinidis, D. Neculoiu, D. Vasilache, M. Lagadas, G. Deligeorgis, S. Iordanescu
{"title":"GaAs micromachining for millimeter wave applications","authors":"A. Muller, G. Constantinidis, D. Neculoiu, D. Vasilache, M. Lagadas, G. Deligeorgis, S. Iordanescu","doi":"10.1109/SMICND.2002.1105793","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105793","url":null,"abstract":"This paper presents the fabrication processes for micromachined millimeter wave devices on micromachined GaAs substrates. The 2.2 /spl mu/m thin GaAs/AlGaAs membrane, obtained by MBE growth and micromachining of semi-insulating <100> GaAs, is used as support for millimeter wave filter structures. Cascaded coplanar waveguide open-end series stubs filter type structures, with central frequencies of 38 and 77 GHz, as well as monolithic integrated millimeter wave receivers were designed and manufactured on GaAs micromachined substrates.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"30 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129169119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computer-aided design of mm-wave circuits fabricated on micromachined silicon 微加工硅基毫米波电路的计算机辅助设计
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105792
D. Neculoiu, G. Bartolucci, M. Dragoman, R. Marcelli, F. Giacomozzi, A. Muller
{"title":"Computer-aided design of mm-wave circuits fabricated on micromachined silicon","authors":"D. Neculoiu, G. Bartolucci, M. Dragoman, R. Marcelli, F. Giacomozzi, A. Muller","doi":"10.1109/SMICND.2002.1105792","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105792","url":null,"abstract":"This paper presents the design methodology for the micromachined circuits operating in the microwave and mm-wave frequency region. The design is based on dividing the circuit into membrane-supported components, bulk components and membrane to bulk transitions. Every region is modeled using appropriate techniques and using full-wave electromagnetic simulation software. As illustrative examples, the design of band-pass filter structures and double-folded slot antenna arrays are briefly described. The micromachined structures were fabricated and measured results are presented.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129368990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigations during annealing of the interface in Si-Si bonded wafers by multiple internal transmission infrared spectroscopy 多重内透射红外光谱法研究硅硅键合晶片界面退火过程
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105847
C. Himcinschi, M. Friedrich, K. Hiller, T. Gessner, D. Zahn
{"title":"Investigations during annealing of the interface in Si-Si bonded wafers by multiple internal transmission infrared spectroscopy","authors":"C. Himcinschi, M. Friedrich, K. Hiller, T. Gessner, D. Zahn","doi":"10.1109/SMICND.2002.1105847","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105847","url":null,"abstract":"A multiple internal transmission (MIT) technique was used for infrared (IR) spectroscopic investigations during annealing of the interfaces in room temperature Si-Si bonded wafers with different chemical pre-treatments. The evolution with annealing temperature of the chemical species at the interface are used to explain the bonding mechanism of Si wafers in the temperature range of 30-400/spl deg/C.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116282379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Toward an interconnect programmable CMOS substrate for MCMS 面向MCMS的可编程CMOS衬底互连研究
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105857
M. Fraile, R. Martínez, L. Terés
{"title":"Toward an interconnect programmable CMOS substrate for MCMS","authors":"M. Fraile, R. Martínez, L. Terés","doi":"10.1109/SMICND.2002.1105857","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105857","url":null,"abstract":"Multi-Chip Module (MCM) manufacturing technologies offers a new approach for reducing the size of electronics systems and improving its power consumption and speed. In order to take advantage of this and minimise cost, we should find ways of reusing a substrate in different applications. We have resumed the implementation of first test vehicle and it is presented the developed, characterisation and test of a second prototype (FPS-2M) and some other devices and the environment for test.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132799717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recombination properties of ZnIn/sub 2/S/sub 4/:Mn single crystals ZnIn/sub 2/S/sub 4/:Mn单晶的复合性能
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105879
E. Arama, V. Zhitar’, A. Machuga, T. Shemyakova
{"title":"Recombination properties of ZnIn/sub 2/S/sub 4/:Mn single crystals","authors":"E. Arama, V. Zhitar’, A. Machuga, T. Shemyakova","doi":"10.1109/SMICND.2002.1105879","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105879","url":null,"abstract":"Recombination characteristics of single crystals of Mn-doped ZnIn/sub 2/S/sub 4/(III) three-layer polytypes have been investigated. The characteristic Features of cathodoluminescence (CL) have been found out. The CL spectra shift toward the long wavelength range is observed when the dopant concentration increases and temperature decreases till 80 K. The photoconductivity (PC) spectra shift to the high energy region and the PC type changes with the increasing of the dopant concentration. Doping with Mn increases the order of the crystal. A model for the interpretation of the experimental data is proposed.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130958360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structural investigation of LPCVD poly-silicon layers used in surface micromachining 表面微加工用LPCVD多晶硅层的结构研究
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105809
M. Danila, E. Manea, R. Muller, R. Gavrila
{"title":"Structural investigation of LPCVD poly-silicon layers used in surface micromachining","authors":"M. Danila, E. Manea, R. Muller, R. Gavrila","doi":"10.1109/SMICND.2002.1105809","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105809","url":null,"abstract":"In this application oriented study, we have investigated the microstructure changes of LPCVD poly-silicon layers after phosphorus doping and/or an additional annealing step, compared to the as-deposited layers. X-ray diffraction (XRD) and atomic force microscopy (AFM) investigation techniques were used to obtain information on the grain size, structure, texture, crystalline fraction and surface roughness. We found that deposition of poly-silicon layers in a mixed amorphous/crystalline state at 610/spl deg/C with a small crystalline fraction and subsequent crystallization induced by additional phosphorus doping and/or annealing steps provide stable films of superior quality.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133135542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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