多重内透射红外光谱法研究硅硅键合晶片界面退火过程

Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI:10.1109/SMICND.2002.1105847

C. Himcinschi, M. Friedrich, K. Hiller, T. Gessner, D. Zahn

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摘要

采用多重内透射(MIT)技术对不同化学预处理的室温Si-Si键合晶片界面退火过程进行了红外光谱研究。用界面化学物质随退火温度的变化来解释硅片在30 ~ 400℃温度范围内的键合机理。

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Investigations during annealing of the interface in Si-Si bonded wafers by multiple internal transmission infrared spectroscopy

A multiple internal transmission (MIT) technique was used for infrared (IR) spectroscopic investigations during annealing of the interfaces in room temperature Si-Si bonded wafers with different chemical pre-treatments. The evolution with annealing temperature of the chemical species at the interface are used to explain the bonding mechanism of Si wafers in the temperature range of 30-400/spl deg/C.

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Proceedings. International Semiconductor Conference

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