GaAs micromachining for millimeter wave applications

A. Muller, G. Constantinidis, D. Neculoiu, D. Vasilache, M. Lagadas, G. Deligeorgis, S. Iordanescu
{"title":"GaAs micromachining for millimeter wave applications","authors":"A. Muller, G. Constantinidis, D. Neculoiu, D. Vasilache, M. Lagadas, G. Deligeorgis, S. Iordanescu","doi":"10.1109/SMICND.2002.1105793","DOIUrl":null,"url":null,"abstract":"This paper presents the fabrication processes for micromachined millimeter wave devices on micromachined GaAs substrates. The 2.2 /spl mu/m thin GaAs/AlGaAs membrane, obtained by MBE growth and micromachining of semi-insulating <100> GaAs, is used as support for millimeter wave filter structures. Cascaded coplanar waveguide open-end series stubs filter type structures, with central frequencies of 38 and 77 GHz, as well as monolithic integrated millimeter wave receivers were designed and manufactured on GaAs micromachined substrates.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"30 11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Semiconductor Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2002.1105793","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper presents the fabrication processes for micromachined millimeter wave devices on micromachined GaAs substrates. The 2.2 /spl mu/m thin GaAs/AlGaAs membrane, obtained by MBE growth and micromachining of semi-insulating <100> GaAs, is used as support for millimeter wave filter structures. Cascaded coplanar waveguide open-end series stubs filter type structures, with central frequencies of 38 and 77 GHz, as well as monolithic integrated millimeter wave receivers were designed and manufactured on GaAs micromachined substrates.
用于毫米波应用的砷化镓微加工
本文介绍了在微加工砷化镓衬底上制备微加工毫米波器件的工艺。通过半绝缘GaAs的MBE生长和微加工得到2.2 /spl mu/m的GaAs/AlGaAs薄膜,作为毫米波滤波器结构的支撑。在GaAs微加工基板上设计制造了中心频率为38 GHz和77 GHz的级联共面波导开放式串接滤波器结构以及单片集成毫米波接收机。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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