表面微加工用LPCVD多晶硅层的结构研究

M. Danila, E. Manea, R. Muller, R. Gavrila
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引用次数: 0

摘要

在这项以应用为导向的研究中,我们研究了磷掺杂和/或额外退火步骤后LPCVD多晶硅层的微观结构变化,与沉积层相比。采用x射线衍射(XRD)和原子力显微镜(AFM)研究技术,获得了晶粒尺寸、结构、织构、结晶分数和表面粗糙度等信息。我们发现,在610/spl℃的温度下,以非晶/晶混合状态沉积多晶硅层,晶体分数很小,然后通过额外的磷掺杂和/或退火步骤诱导结晶,可以获得质量优良的稳定薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural investigation of LPCVD poly-silicon layers used in surface micromachining
In this application oriented study, we have investigated the microstructure changes of LPCVD poly-silicon layers after phosphorus doping and/or an additional annealing step, compared to the as-deposited layers. X-ray diffraction (XRD) and atomic force microscopy (AFM) investigation techniques were used to obtain information on the grain size, structure, texture, crystalline fraction and surface roughness. We found that deposition of poly-silicon layers in a mixed amorphous/crystalline state at 610/spl deg/C with a small crystalline fraction and subsequent crystallization induced by additional phosphorus doping and/or annealing steps provide stable films of superior quality.
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