{"title":"表面微加工用LPCVD多晶硅层的结构研究","authors":"M. Danila, E. Manea, R. Muller, R. Gavrila","doi":"10.1109/SMICND.2002.1105809","DOIUrl":null,"url":null,"abstract":"In this application oriented study, we have investigated the microstructure changes of LPCVD poly-silicon layers after phosphorus doping and/or an additional annealing step, compared to the as-deposited layers. X-ray diffraction (XRD) and atomic force microscopy (AFM) investigation techniques were used to obtain information on the grain size, structure, texture, crystalline fraction and surface roughness. We found that deposition of poly-silicon layers in a mixed amorphous/crystalline state at 610/spl deg/C with a small crystalline fraction and subsequent crystallization induced by additional phosphorus doping and/or annealing steps provide stable films of superior quality.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural investigation of LPCVD poly-silicon layers used in surface micromachining\",\"authors\":\"M. Danila, E. Manea, R. Muller, R. Gavrila\",\"doi\":\"10.1109/SMICND.2002.1105809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this application oriented study, we have investigated the microstructure changes of LPCVD poly-silicon layers after phosphorus doping and/or an additional annealing step, compared to the as-deposited layers. X-ray diffraction (XRD) and atomic force microscopy (AFM) investigation techniques were used to obtain information on the grain size, structure, texture, crystalline fraction and surface roughness. We found that deposition of poly-silicon layers in a mixed amorphous/crystalline state at 610/spl deg/C with a small crystalline fraction and subsequent crystallization induced by additional phosphorus doping and/or annealing steps provide stable films of superior quality.\",\"PeriodicalId\":178478,\"journal\":{\"name\":\"Proceedings. International Semiconductor Conference\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. International Semiconductor Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2002.1105809\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Semiconductor Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2002.1105809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural investigation of LPCVD poly-silicon layers used in surface micromachining
In this application oriented study, we have investigated the microstructure changes of LPCVD poly-silicon layers after phosphorus doping and/or an additional annealing step, compared to the as-deposited layers. X-ray diffraction (XRD) and atomic force microscopy (AFM) investigation techniques were used to obtain information on the grain size, structure, texture, crystalline fraction and surface roughness. We found that deposition of poly-silicon layers in a mixed amorphous/crystalline state at 610/spl deg/C with a small crystalline fraction and subsequent crystallization induced by additional phosphorus doping and/or annealing steps provide stable films of superior quality.