{"title":"CMOS技术中的可变增益反转层发射极光电晶体管","authors":"N. Jankovic, E. Jovanovic","doi":"10.1109/SMICND.2002.1105835","DOIUrl":null,"url":null,"abstract":"The vertical bipolar phototransistor in CMOS technology employing the inversion emitter concept has been analysed by simulation and experiment. It is found that the inversion emitter substantially increases current gain, particularly at low current levels, which yields a high output photo-current. In addition, current gain and photo-current magnitude can be controlled by the external gate voltage which gives the potential for a number of novel applications.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Variable-gain inversion layer emitter phototransistor in CMOS technology\",\"authors\":\"N. Jankovic, E. Jovanovic\",\"doi\":\"10.1109/SMICND.2002.1105835\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The vertical bipolar phototransistor in CMOS technology employing the inversion emitter concept has been analysed by simulation and experiment. It is found that the inversion emitter substantially increases current gain, particularly at low current levels, which yields a high output photo-current. In addition, current gain and photo-current magnitude can be controlled by the external gate voltage which gives the potential for a number of novel applications.\",\"PeriodicalId\":178478,\"journal\":{\"name\":\"Proceedings. International Semiconductor Conference\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. International Semiconductor Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2002.1105835\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Semiconductor Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2002.1105835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Variable-gain inversion layer emitter phototransistor in CMOS technology
The vertical bipolar phototransistor in CMOS technology employing the inversion emitter concept has been analysed by simulation and experiment. It is found that the inversion emitter substantially increases current gain, particularly at low current levels, which yields a high output photo-current. In addition, current gain and photo-current magnitude can be controlled by the external gate voltage which gives the potential for a number of novel applications.
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