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Proceedings. International Semiconductor Conference最新文献

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Resonant tunneling in GaAs/AlGaAs superlattices with periodic potential profiles 具有周期性电位分布的GaAs/AlGaAs超晶格中的共振隧道效应
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105880
A. Niculescu
{"title":"Resonant tunneling in GaAs/AlGaAs superlattices with periodic potential profiles","authors":"A. Niculescu","doi":"10.1109/SMICND.2002.1105880","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105880","url":null,"abstract":"The effect of the periodicity over the transmission property in semiconductor superlattices is theoretically investigated. It is found that the increasing the number of periods in GaAs/AlGaAs multiple quantum wells (MQW) introduces additional resonant states. it is also noted that the asymmetry of periodic potential profile is one key parameter in reaching high values of the transmission coefficient. These results can provide a new method to obtain filters in the submillimeter range.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"4 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134446033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The modeling of a sensor for the human blood pressure 人体血压传感器的建模
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105803
F. Ravariu, C. Ravariu, O. Nedelcu
{"title":"The modeling of a sensor for the human blood pressure","authors":"F. Ravariu, C. Ravariu, O. Nedelcu","doi":"10.1109/SMICND.2002.1105803","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105803","url":null,"abstract":"Blood pressure detection requires both sound detection and pressure measurements. Piezoelectric materials fulfill both aims. Starting from a previous work, a pressure sensor based on a SOI transistor with a piezoelectric layer, was adapted for the blood pressure domain. The ANSYS simulations provide the mechanical stress in the structure. The ATLAS software simulates the electrical behavior. This paper offers a modeling of the sensor and consequently design guidelines.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114155728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Highly sensitive microwave detecting Au-TiB/sub x/(ZrB/sub x/)-n-SiC 6H diodes 高灵敏度微波探测Au-TiB/sub x/(ZrB/sub x/)-n-SiC 6H二极管
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105799
N. S. Boltovets, V. N. Ivanov, A.V. Zorenko, R. Konakova, Y.Y. Kudrik, V.V. Milenin, S.K. Abdizhaliev
{"title":"Highly sensitive microwave detecting Au-TiB/sub x/(ZrB/sub x/)-n-SiC 6H diodes","authors":"N. S. Boltovets, V. N. Ivanov, A.V. Zorenko, R. Konakova, Y.Y. Kudrik, V.V. Milenin, S.K. Abdizhaliev","doi":"10.1109/SMICND.2002.1105799","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105799","url":null,"abstract":"We present electrical parameters and characteristics of microwave detecting Au-TiB/sub x/(ZrB/sub x/)-n-SiC 6H diodes. The possibility of using these diodes as power sensors for application in a wide power range (including power up to 1 W) was studied. It is shown that heat-resistant Schottky-barrier diodes (fabricated using magnetron sputtering onto SiC wafers) based on TiB/sub x/(ZrB/sub x/) interstitial phases demonstrate voltage sensitivity of 1800 $3500 mV/mW at input power of 10/sup -7/ W.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114836797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact delay modeling of latch-based threshold logic gates 基于锁存器的门限逻辑门的紧凑延迟建模
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105858
M. Padure, S. Cotofana, C. Dan, S. Vassiliadis, M. Bodea
{"title":"Compact delay modeling of latch-based threshold logic gates","authors":"M. Padure, S. Cotofana, C. Dan, S. Vassiliadis, M. Bodea","doi":"10.1109/SMICND.2002.1105858","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105858","url":null,"abstract":"In this paper we propose a new compact static delay model for latch-based CMOS threshold logic gates. The particular effects captured by the model are. the dependency of the delay on threshold (data) values and the dependency of the delay vs. capacitive loading. The model parameters were extracted from several Threshold logic gate setups and the delay predicted by the model fora computer arithmetic basic circuit fully agree with circuit simulations.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117119274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fowler-Nordheim tunneling in epitaxial yttrium oxide on silicon for high-k gate applications 高k栅极外延氧化钇在硅上的Fowler-Nordheim隧道效应
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105856
B. Mereu, G. Vellianitis, G. Apostolopoulos, A. Dimouls, M. Alexe
{"title":"Fowler-Nordheim tunneling in epitaxial yttrium oxide on silicon for high-k gate applications","authors":"B. Mereu, G. Vellianitis, G. Apostolopoulos, A. Dimouls, M. Alexe","doi":"10.1109/SMICND.2002.1105856","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105856","url":null,"abstract":"Fowler-Nordheim tunneling occurs in epitaxially grown Y/sub 2/O/sub 3/ on Si [100]. The barrier height evaluated from F-N plots was found to be about 1 eV and 1.4 eV for negative and positive gate bias, respectively. Further in-situ annealing decreases the barrier height for negative gate bias to about 0.38 eV.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130858040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation of CIGS solar cell components by improved e-beam ablation technology and control of their final parameters 改进电子束烧蚀技术制备CIGS太阳能电池组件及其最终参数控制
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105830
A. M. Andriesh, V. Verlan, L. A. Malahova
{"title":"Preparation of CIGS solar cell components by improved e-beam ablation technology and control of their final parameters","authors":"A. M. Andriesh, V. Verlan, L. A. Malahova","doi":"10.1109/SMICND.2002.1105830","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105830","url":null,"abstract":"Two step technology for deposition of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ (CIGS) polycrystalline films was developed: deposition with the help of an \"e-beam ablation\" process at 250/spl deg/C and subsequent selenization at 500/spl deg/C. X-ray diffraction analysis of films showed chalcopyrite structure with stringent <112> orientation. The thin films have optical absorption coefficients in the 10/sup 4/ cm/sup -1/ range and the band gaps are 1.0, 1.4 and 1.65 eV for x=0, 0.25, and 1.0 respectively. The method of admittance spectroscopy for determination of density of concentration of deep states (N(E)) was applied for optimization of the deposition process and the photovoltaic properties. The continuous distribution N(E) has been found.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115992193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced silicon OEICs 先进的硅oeic
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105822
H. Zimmermann, M. Fortsch
{"title":"Advanced silicon OEICs","authors":"H. Zimmermann, M. Fortsch","doi":"10.1109/SMICND.2002.1105822","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105822","url":null,"abstract":"In this work we give a review of integrated photodiodes and optoelectronic integrated circuits (OEICs) for optical storage (OS) systems and fiber receivers. It is demonstrated, that even by using low-cost standard silicon technologies (CMOS, BiCMOS and SOI), high-performance OEICs can be realized. We describe low-offset OS-OEICs with bandwidths of up to 250 MHz and fiber receivers with maximum data rates of 2 Gb/s.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127158117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Autoprogrammable superior-order curvature-correction CMOS thermal system 自动可编程高阶曲率校正CMOS热系统
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105870
C. Popa
{"title":"Autoprogrammable superior-order curvature-correction CMOS thermal system","authors":"C. Popa","doi":"10.1109/SMICND.2002.1105870","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105870","url":null,"abstract":"The proposed circuit represents an autoprogrammable voltage reference, the reduction of the temperature coefficient being achieved by the cumulative effect of two methods: autoprogrammable temperature stabilization of the chip and a superior-order curvature-correction technique. The originality of this work consists in implementing an automatic digital programmable loop designed to select, after the analysis of the thermal behavior of the chip, the optimal stabilization temperature and the optimal type of the curvature-correction. The simulated results report a temperature coefficient about 0.005 ppm/K.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127660147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Spectroscopic ellipsometry characterisation of solid phase crystallisation of silicon thin films obtained by LPCVD LPCVD制备硅薄膜固相结晶的椭偏光谱表征
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105851
M. Modreanu, M. Gartner, C. Cobianu, E. Manea
{"title":"Spectroscopic ellipsometry characterisation of solid phase crystallisation of silicon thin films obtained by LPCVD","authors":"M. Modreanu, M. Gartner, C. Cobianu, E. Manea","doi":"10.1109/SMICND.2002.1105851","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105851","url":null,"abstract":"This work investigated the low and high temperature solid phase crystallisation (SPC) on silicon thin films prepared by low-pressure chemical vapour deposition. Silicon thin films were deposited by low-pressure chemical vapor deposition (LPCVD) on oxidized silicon substrates, from silane decomposition. The deposition temperatures use in our experiment have been 500, 530, 550, 590 and 615/spl deg/C and the pressure values were 20, 53 and 100 Pa. Spectroscopic ellipsometry (SE) was used in order to point out the phase transition of as-deposited and annealed LPCVD silicon from amorphous to crystalline state via a mixed phase. The dependence of the structural parameters on the deposition parameters has been investigated. A better characterization of the polysilicon layer is achieved by using the following optical model: c-Si/SiO/sub 2/+voids/c-Si+a-Si+voids/SiO/sub 2/+c-Si+a-Si+voids. This optical model for LPCVD silicon films gives the possibility of extracting information about optical, surface roughness and microstructural properties. The SE results were in good agreement with the X-ray diffraction (XRD) measurements. SE has proved an improved sensitivity to microstructural changes in the as-deposited and annealed LPCVD silicon compared with other structural characterization methods like XRD.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132843403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reversible wafer bonding for reliable compound semiconductor processing 可逆晶圆键合可靠的化合物半导体加工
Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI: 10.1109/SMICND.2002.1105861
V. Dragoi, T. Glinsner, G. Mittendorfer, M. Wimplinger, P. Lindner
{"title":"Reversible wafer bonding for reliable compound semiconductor processing","authors":"V. Dragoi, T. Glinsner, G. Mittendorfer, M. Wimplinger, P. Lindner","doi":"10.1109/SMICND.2002.1105861","DOIUrl":"https://doi.org/10.1109/SMICND.2002.1105861","url":null,"abstract":"Reversible wafer bonding is a process enabling reliable compound semiconductor wafer handling for multi-step processes including photolithography, thinning, etching or coating. Two processes using wax and dry film adhesives are presented in this paper.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132940653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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