{"title":"CdS/CdTe异质光元件的厚度相关性质","authors":"T. Potlog, J. Sites, P. Gashin, L. Ghimpu","doi":"10.1109/SMICND.2002.1105836","DOIUrl":null,"url":null,"abstract":"The analysis of the I-V characteristics of a CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating, J/sub sc/=24.8 mA/cm/sup 2/, V/sub oc/=0.82 V, FF=0.48, /spl eta/=9.76% are obtained in the case when time of deposition of CdTe is 3.5 min. The photoresponse decreases with increasing CdTe thickness. The photosensitivity covers the wavelength range from 0.50 /spl mu/m to 0.86 /spl mu/m for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3.5 min.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"555 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Thickness dependent properties of CdS/CdTe hetero-photo-elements\",\"authors\":\"T. Potlog, J. Sites, P. Gashin, L. Ghimpu\",\"doi\":\"10.1109/SMICND.2002.1105836\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The analysis of the I-V characteristics of a CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating, J/sub sc/=24.8 mA/cm/sup 2/, V/sub oc/=0.82 V, FF=0.48, /spl eta/=9.76% are obtained in the case when time of deposition of CdTe is 3.5 min. The photoresponse decreases with increasing CdTe thickness. The photosensitivity covers the wavelength range from 0.50 /spl mu/m to 0.86 /spl mu/m for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3.5 min.\",\"PeriodicalId\":178478,\"journal\":{\"name\":\"Proceedings. International Semiconductor Conference\",\"volume\":\"555 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. International Semiconductor Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2002.1105836\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Semiconductor Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2002.1105836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thickness dependent properties of CdS/CdTe hetero-photo-elements
The analysis of the I-V characteristics of a CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating, J/sub sc/=24.8 mA/cm/sup 2/, V/sub oc/=0.82 V, FF=0.48, /spl eta/=9.76% are obtained in the case when time of deposition of CdTe is 3.5 min. The photoresponse decreases with increasing CdTe thickness. The photosensitivity covers the wavelength range from 0.50 /spl mu/m to 0.86 /spl mu/m for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3.5 min.
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