{"title":"关于金属/多孔硅/对硅结构并联电阻的测定","authors":"A. Dafinei, I. Munteanu, A. Dafinei","doi":"10.1109/SMICND.2002.1105878","DOIUrl":null,"url":null,"abstract":"Considering the real structure of porous silicon the paper proposes a modelling of the electrical resistance structure of a porous silicon layer prepared on moderately resistive pSi substrate. The interpretation of electrical measurements over the PS/Si structure considering an electrical scheme with distributed elements allows determining the shunt resistance of the heterojunction.","PeriodicalId":178478,"journal":{"name":"Proceedings. International Semiconductor Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"About the determination of the shunt resistance of the metal/porous silicon/p-silicon structures\",\"authors\":\"A. Dafinei, I. Munteanu, A. Dafinei\",\"doi\":\"10.1109/SMICND.2002.1105878\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Considering the real structure of porous silicon the paper proposes a modelling of the electrical resistance structure of a porous silicon layer prepared on moderately resistive pSi substrate. The interpretation of electrical measurements over the PS/Si structure considering an electrical scheme with distributed elements allows determining the shunt resistance of the heterojunction.\",\"PeriodicalId\":178478,\"journal\":{\"name\":\"Proceedings. International Semiconductor Conference\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. International Semiconductor Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2002.1105878\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Semiconductor Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2002.1105878","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
About the determination of the shunt resistance of the metal/porous silicon/p-silicon structures
Considering the real structure of porous silicon the paper proposes a modelling of the electrical resistance structure of a porous silicon layer prepared on moderately resistive pSi substrate. The interpretation of electrical measurements over the PS/Si structure considering an electrical scheme with distributed elements allows determining the shunt resistance of the heterojunction.
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