碳化硅光电探测器的电学和光学特性

Proceedings. International Semiconductor Conference Pub Date : 2002-12-16 DOI:10.1109/SMICND.2002.1105829

F. Draghici, F. Mitu, G. Brezeanu, M. Badila, C. Boianceanu, P. Agache, I. Enache

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引用次数: 2

摘要

本文对基于碳化硅的肖特基透明接触紫外探测器进行了电学和光学研究。器件光谱分析表明，在270 ~ 360 nm范围内灵敏度相对恒定，在360 ~ 400 nm范围内以380 nm为中心灵敏度较高。

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Electrical and optical behavior of the SiC photodetectors

The paper presents an electrical and optical investigation of Schottky transparent contact UV detectors built on SiC. The device spectral analysis evinced a relatively constant low sensitivity in the 270-360 nm range completed with a peak higher sensitivity centered on 380 nm for 360-400 nm ranges.

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Proceedings. International Semiconductor Conference

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