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Proceedings of the 2015 International Conference on Microelectronic Test Structures最新文献

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A novel structure of MOSFET array to measure ioff-ion with high accuracy and high density 一种用于高精度、高密度离子测量的新型MOSFET阵列结构
Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI: 10.1109/ICMTS.2015.7106095
Tsuyoshi Suzuki, A. Anchlia, V. Cherman, H. Oishi, S. Mori, J. Ryckaert, K. Ogawa, G. van der Plas, E. Beyne, Y. Fukuzaki, D. Verkest, H. Ohnuma
{"title":"A novel structure of MOSFET array to measure ioff-ion with high accuracy and high density","authors":"Tsuyoshi Suzuki, A. Anchlia, V. Cherman, H. Oishi, S. Mori, J. Ryckaert, K. Ogawa, G. van der Plas, E. Beyne, Y. Fukuzaki, D. Verkest, H. Ohnuma","doi":"10.1109/ICMTS.2015.7106095","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106095","url":null,"abstract":"We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127191032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A test structure for characterizing the cleanliness of glass beads using low-frequency dielectric spectroscopy 一种用低频介电光谱表征玻璃微珠洁净度的测试结构
Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI: 10.1109/ICMTS.2015.7106111
M. Buehler
{"title":"A test structure for characterizing the cleanliness of glass beads using low-frequency dielectric spectroscopy","authors":"M. Buehler","doi":"10.1109/ICMTS.2015.7106111","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106111","url":null,"abstract":"The cleanliness of glass beads was assessed using a test structure and low-frequency dielectric spectroscopy operating between 10 mHz and 100 kHz. Glass beads were exposed to moisture between 40 and 85% RH. Results indicate that capillary and film water can be used to indicate the state of cleanliness.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134088460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Combined transmission line measurement structures to study thin film resistive sensor fabrication 结合传输线测量结构研究薄膜电阻式传感器的制作
Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI: 10.1109/ICMTS.2015.7106136
A. Tabašnikov, A. Walton, S. Smith
{"title":"Combined transmission line measurement structures to study thin film resistive sensor fabrication","authors":"A. Tabašnikov, A. Walton, S. Smith","doi":"10.1109/ICMTS.2015.7106136","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106136","url":null,"abstract":"This paper reports the design and application of test structures for extracting the resistance of features formed when fabricating evaporated platinum (Pt) thin film structures on patterned, sputtered tantalum nitride (TaN). The combination of these two layers is used to produce an integrated resistive sensor structure. Two resistive features were considered during the test structure design: firstly the contact resistance between the two metal layers and secondly, the additional resistance introduced in the upper metal layer due to step coverage effects.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134155185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The impact of deep trench and well proximity on MOSFET performance 深沟槽和井邻近对MOSFET性能的影响
Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI: 10.1109/ICMTS.2015.7106113
Hanyu Sheng, T. Bettinger, J. Bates
{"title":"The impact of deep trench and well proximity on MOSFET performance","authors":"Hanyu Sheng, T. Bettinger, J. Bates","doi":"10.1109/ICMTS.2015.7106113","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106113","url":null,"abstract":"The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134495806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of a compacted doubly nesting array in Narrow Scribe Line aimed at detecting soft failures of interconnect via 针对互连孔软故障检测的窄划线线压缩双嵌套阵列的研制
Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI: 10.1109/ICMTS.2015.7106112
H. Shinkawata, Nobuo Tsuboi, A. Tsuda, Shingo Sato, Yasuo Yamaguchi
{"title":"Development of a compacted doubly nesting array in Narrow Scribe Line aimed at detecting soft failures of interconnect via","authors":"H. Shinkawata, Nobuo Tsuboi, A. Tsuda, Shingo Sato, Yasuo Yamaguchi","doi":"10.1109/ICMTS.2015.7106112","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106112","url":null,"abstract":"We introduce a new addressable test structure array using for mass production stage which is compacted doubly nesting array into Narrow Scribe Line which named as High sensitivity-Screening and Detection-decoder test structure in Scribe line (HSD-S). Abnormally high resistance as a soft failure via was detected and located in a 40nm CMOS technology. We captured a soft failure bit which had a high resistance via exhibiting over 160 times larger one.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115442828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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