Tsuyoshi Suzuki, A. Anchlia, V. Cherman, H. Oishi, S. Mori, J. Ryckaert, K. Ogawa, G. van der Plas, E. Beyne, Y. Fukuzaki, D. Verkest, H. Ohnuma
{"title":"一种用于高精度、高密度离子测量的新型MOSFET阵列结构","authors":"Tsuyoshi Suzuki, A. Anchlia, V. Cherman, H. Oishi, S. Mori, J. Ryckaert, K. Ogawa, G. van der Plas, E. Beyne, Y. Fukuzaki, D. Verkest, H. Ohnuma","doi":"10.1109/ICMTS.2015.7106095","DOIUrl":null,"url":null,"abstract":"We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel structure of MOSFET array to measure ioff-ion with high accuracy and high density\",\"authors\":\"Tsuyoshi Suzuki, A. Anchlia, V. Cherman, H. Oishi, S. Mori, J. Ryckaert, K. Ogawa, G. van der Plas, E. Beyne, Y. Fukuzaki, D. Verkest, H. Ohnuma\",\"doi\":\"10.1109/ICMTS.2015.7106095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.\",\"PeriodicalId\":177627,\"journal\":{\"name\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2015.7106095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel structure of MOSFET array to measure ioff-ion with high accuracy and high density
We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.
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