深沟槽和井邻近对MOSFET性能的影响

Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI:10.1109/ICMTS.2015.7106113

Hanyu Sheng, T. Bettinger, J. Bates

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引用次数: 1

摘要

开发测试结构是为了在0.13 μm工艺中量化深沟和井邻近对mosfet的影响。分析了两种构造类型:深沟与井边共同变化的构造;这些边是独立变化的。测量结果表明，深沟效应和井邻近效应会影响器件的性能。

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The impact of deep trench and well proximity on MOSFET performance

The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.

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Proceedings of the 2015 International Conference on Microelectronic Test Structures

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