{"title":"Combined transmission line measurement structures to study thin film resistive sensor fabrication","authors":"A. Tabašnikov, A. Walton, S. Smith","doi":"10.1109/ICMTS.2015.7106136","DOIUrl":null,"url":null,"abstract":"This paper reports the design and application of test structures for extracting the resistance of features formed when fabricating evaporated platinum (Pt) thin film structures on patterned, sputtered tantalum nitride (TaN). The combination of these two layers is used to produce an integrated resistive sensor structure. Two resistive features were considered during the test structure design: firstly the contact resistance between the two metal layers and secondly, the additional resistance introduced in the upper metal layer due to step coverage effects.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106136","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports the design and application of test structures for extracting the resistance of features formed when fabricating evaporated platinum (Pt) thin film structures on patterned, sputtered tantalum nitride (TaN). The combination of these two layers is used to produce an integrated resistive sensor structure. Two resistive features were considered during the test structure design: firstly the contact resistance between the two metal layers and secondly, the additional resistance introduced in the upper metal layer due to step coverage effects.