Journal of Vacuum Science and Technology最新文献_第4页

Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO3 films BiFeO3薄膜中写一次读多次电阻开关的顶电极依赖性

Journal of Vacuum Science and Technology Pub Date : 2023-09-01 DOI: 10.1116/6.0002946

Yajun Fu, Wei Tang, Jin Wang, Linhong Cao

{"title":"Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO3 films","authors":"Yajun Fu, Wei Tang, Jin Wang, Linhong Cao","doi":"10.1116/6.0002946","DOIUrl":"https://doi.org/10.1116/6.0002946","url":null,"abstract":"The electrode is one of the key factors that influences and controls the resistive switching characteristic of a resistive switching device. In this work, we investigated the write-once-read-many-times (WORM)-resistive switching behavior of BiFeO3 (BFO)-based devices with different top electrodes, including Pt, Ag, Cu, and Al. The WORM-resistive switching behavior has been observed in Pt/BFO/LaNiO3 (LNO), Ag/BFO/LNO, and Cu/BFO/LNO devices. In the initial high resistance state, the Pt/BFO/LNO device shows space-charge-limited current conduction due to the large Schottky barrier height at the Pt/BFO interface, while the Ag/BFO/LNO and Cu/BFO/LNO devices exhibit Schottky emission conduction due to the small barrier height at both top electrode/BFO and BFO/LNO interfaces. In the low resistance state, the metallic conduction of the Pt/BFO/LNO device is a result of the formation of conduction filaments composed of oxygen vacancies, and yet the metallic conduction of Ag/BFO/LNO and Cu/BFO/LNO devices is due to the formation of oxygen vacancies-incorporated metal conduction filaments (Ag and Cu, respectively). The observed hysteresis I-V curve of the Al/BFO/LNO device may be attributed to oxygen vacancies and defects caused by the formation of Al–O bond near the Al/BFO interface. Our results indicate that controlling an electrode is a prominent and feasible way to modulate the performance of resistive switching devices.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135253522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metal-pattern preparation based on selective deposition using soft organofluorine surfaces 基于软有机氟表面选择性沉积的金属图案制备

Journal of Vacuum Science and Technology Pub Date : 2023-09-01 DOI: 10.1116/6.0002832

Tsuyoshi Tsujioka

引用次数: 0

Influence of external circuitry on CF4 breakdown process in capacitively coupled plasma 外电路对电容耦合等离子体中CF4击穿过程的影响

Journal of Vacuum Science and Technology Pub Date : 2023-09-01 DOI: 10.1116/5.0161552

Zhaoyu Chen, Jingwen Xu, Hongyu Wang, Hao Wu, Wei Jiang, Ya Zhang

{"title":"Influence of external circuitry on CF4 breakdown process in capacitively coupled plasma","authors":"Zhaoyu Chen, Jingwen Xu, Hongyu Wang, Hao Wu, Wei Jiang, Ya Zhang","doi":"10.1116/5.0161552","DOIUrl":"https://doi.org/10.1116/5.0161552","url":null,"abstract":"Capacitively coupled plasma (CCP) tools are crucial for etching, deposition, and cleaning processes in the semiconductor industry. A comprehensive understanding of their discharge characteristics is vital for the advancement of chip processing technology. In this study, the influence of external circuitry on the breakdown process was investigated under the CF4 discharge system, with a particular focus on challenges presented by the nonlinear nature of the plasma. The results demonstrated that the external circuit significantly affects the discharge process by altering the electric field distribution as well as modifying the electron density and temperature of the plasma. By incorporating the matching circuit, stable discharge was achieved at reduced voltage levels. During breakdown, a substantial increase in the capacitance of the discharge chamber is induced by the formation of the sheath, which alters the amplitude of the electrical signal within the external circuit. The breakdown characteristics are significantly influenced by the capacitance of the matching network. Breakdowns with distinctive characteristics can be achieved by selectively choosing different capacitors. Furthermore, a shift in the CF4 discharge mode at different pressures under the external circuit model and the alteration in the discharge mode affect the electrical properties of the plasma in the matched circuit. These findings could be used to optimize the discharge of CCP and its applications, including surface treatment, material synthesis, and environmental remediation.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135346984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the deposition of α-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit 超导电路分子束外延在a-平面蓝宝石衬底上沉积α-钽(110)薄膜的研究

Journal of Vacuum Science and Technology Pub Date : 2023-09-01 DOI: 10.1116/6.0002886

Haolin Jia, Boyi zhou, Tao Wang, Yanfu Wu, Lina Yang, Zengqian Ding, Shuming Li, Xiao Cai, Kanglin Xiong, Jiagui Feng

引用次数: 1

Chemical mechanical planarization for Ta-based superconducting quantum devices 基于ta的超导量子器件的化学机械平面化

Journal of Vacuum Science and Technology Pub Date : 2023-04-07 DOI: 10.1116/6.0002586

Bhatia, Ekta, Kar, Soumen, Nalaskowski, Jakub, Vo, Tuan, Olson, Stephen, Frost, Hunter, Mucci, John, Martinick, Brian, Hung, Pui Yee, Wells, Ilyssa, Schujman, Sandra, Rao, Satyavolu S. Papa

{"title":"Chemical mechanical planarization for Ta-based superconducting quantum devices","authors":"Bhatia, Ekta, Kar, Soumen, Nalaskowski, Jakub, Vo, Tuan, Olson, Stephen, Frost, Hunter, Mucci, John, Martinick, Brian, Hung, Pui Yee, Wells, Ilyssa, Schujman, Sandra, Rao, Satyavolu S. Papa","doi":"10.1116/6.0002586","DOIUrl":"https://doi.org/10.1116/6.0002586","url":null,"abstract":"We report on the development of a chemical mechanical planarization (CMP) process for thick damascene Ta structures with pattern feature sizes down to 100 nm. This CMP process is the core of the fabrication sequence for scalable superconducting integrated circuits at a 300 mm wafer scale. This work has established the elements of various CMP-related design rules that can be followed by a designer for the layout of circuits that include Ta-based coplanar waveguide resonators, capacitors, and interconnects for tantalum-based qubits and single flux quantum circuits. The fabrication of these structures utilizes a 193 nm optical lithography along with 300 mm process tools for dielectric deposition, reactive ion etch, wet-clean, CMP, and in-line metrology—all tools typical for a 300 mm wafer CMOS foundry. Theprocess development was guided by measurements of the physical and electrical characteristics of the planarized structures. Physical characterization such as atomic force microscopy across the 300 mm wafer surface showed that local topography was less than 5 nm. Electrical characterization confirmed low leakage at room temperature, and less than 12% within wafer sheet resistance variation for damascene Ta line widths ranging from 100 nm to 3 μm. Run-to-run reproducibility was also evaluated. Effects of process integration choices including the deposited thickness of Ta are discussed.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135693608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Deep level defect spectroscopies of complex oxide surfaces and interfaces 复杂氧化物表面和界面的深层缺陷光谱

Journal of Vacuum Science and Technology Pub Date : 2021-10-20 DOI: 10.1116/6.0001339

Jun Zhang, K. McNicholas, S. Balaz, Zhaobing Zeng, D. Schlom, L. Brillson

引用次数: 2

Homoepitaxial GaN micropillar array by plasma-free photo-enhanced metal-assisted chemical etching 无等离子体光增强金属辅助化学蚀刻制备GaN微柱阵列

Journal of Vacuum Science and Technology Pub Date : 2021-08-31 DOI: 10.1116/6.0001231

Clarence Chan, Shunya Namiki, J. Hite, M. Mastro, S. Qadri, Xiuling Li

引用次数: 9

Surface study of Pt-3d transition metal alloys, Pt3M (M = Ti, V), under CO oxidation reaction with ambient pressure x-ray photoelectron spectroscopy 用环境压力x射线光电子能谱研究CO氧化反应下Pt-3d过渡金属合金Pt3M (M = Ti, V)的表面

Journal of Vacuum Science and Technology Pub Date : 2021-08-30 DOI: 10.1116/6.0001194

Moon-Sic Jung, Dongwoo Kim, Hojoon Lim, M. Seo, Geonhwa Kim, Luciana Ramirez, F. Bournel, J. Gallet, Ki-jeong Kim, B. Mun

引用次数: 0

Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode 石墨烯电极电容式β-Ga2O3太阳盲光电探测器

Journal of Vacuum Science and Technology Pub Date : 2021-08-26 DOI: 10.1116/6.0001217

A-Hyun Kim, Geonyeop Lee, Jihyun Kim

{"title":"Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode","authors":"A-Hyun Kim, Geonyeop Lee, Jihyun Kim","doi":"10.1116/6.0001217","DOIUrl":"https://doi.org/10.1116/6.0001217","url":null,"abstract":"Conventional solar-blind photodetectors based on the conduction of photoexcited carriers are energy inefficient owing to the power dissipation caused by a resistive sensing mechanism and the narrow bandgap energy of the photon-absorbing layer. Herein, we demonstrate the energy-efficient capacitive sensing of deep-UV wavelengths by integrating an intrinsically solar-blind ultrawide bandgap (UWBG) β-Ga2O3 semiconductor with UV-transparent and conductive graphene electrode. A UWBG β-Ga2O3 eliminates the requirement of a solar-blind deep-UV bandpass filter. The high optical transmittance of the graphene enables UV-C light to be absorbed in the underlying β-Ga2O3, thereby facilitating carrier transport between the graphene electrode and β-Ga2O3. A capacitance change under UV-C excitation is observed, along with excellent reproductivity and spectral selectivity at various frequencies and bias conditions; the sensing performance improves with an increase in frequency. The average power dissipation of the fabricated photodetector in the stand-by (dark) and active (UV-C illumination) modes is 37.7 and 53.3 μW, respectively. Overall, this work introduces a new strategy for developing next-generation compact and energy-efficient solar-blind photodetectors.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80964317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

In-line electronic and structural characterization of reactively sputtered Cu-Co-Mn black spinel oxides 反应溅射Cu-Co-Mn黑色尖晶石氧化物的在线电子和结构表征

Journal of Vacuum Science and Technology Pub Date : 2021-08-25 DOI: 10.1116/6.0001120

A. Krammer, M. Lagier, A. Schüler

{"title":"In-line electronic and structural characterization of reactively sputtered Cu-Co-Mn black spinel oxides","authors":"A. Krammer, M. Lagier, A. Schüler","doi":"10.1116/6.0001120","DOIUrl":"https://doi.org/10.1116/6.0001120","url":null,"abstract":"Cu-Co-Mn spinel oxide thin films are deposited by reactive magnetron sputtering. The x-ray diffraction (XRD) spectrum suggests a nanocrystalline spinel film when sputtered at ≈465 °C. In-line scanning tunneling microscopy confirms nanometric sized grains in the order of 5–10 nm, which then form larger agglomerations of 30–70 nm as observed by scanning electron microscopy. The pristine sample surfaces are characterized by in-line UV photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS). From UPS He I and He II spectra, a valence band edge of 0.38 eV, compatible with a bandgap of ≈0.8 eV, is determined. XPS infers Cu2+, Co3+, and Mn3+ as dominant, thus, fitting well the general spinel formula A2+B23+O42−. The elemental quantification based on XPS core-level peak integration indicates some Cu enrichment and a secondary CuO phase formation at the spinel surface that is congruent with the XRD results where peaks associated with tenorite CuO are also identified. The partially filled 3d bands make the Cu-Co-Mn oxides a promising candidate for selective solar absorbers. The measured spectral reflectance of CuCoMnOx//SiO2 double layer yields a solar absorptance of 0.8 and thermal emittance of 0.05. The coating durability and thermal stability in the air have been confirmed by accelerated aging tests at 270 °C for a duration of 600 h.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77292650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0