Journal of Vacuum Science and Technology最新文献

Modification of discharge sequences to control the random dispersion of flake particles during wafer etching 修改放电顺序以控制晶圆蚀刻过程中片状颗粒的随机分散

Journal of Vacuum Science and Technology Pub Date : 2023-11-14 DOI: 10.1116/6.0002974

Ching Ming Ku, Wen Yea Jang, Stone Cheng

引用次数: 0

Interfacial reactivity in the Co/CuO samples as investigated by x-ray photoelectron spectroscopy 用x射线光电子能谱研究Co/CuO样品的界面反应性

Journal of Vacuum Science and Technology Pub Date : 2023-11-14 DOI: 10.1116/6.0002922

A. R. Chourasia, D. R. Chopra

{"title":"Interfacial reactivity in the Co/CuO samples as investigated by x-ray photoelectron spectroscopy","authors":"A. R. Chourasia, D. R. Chopra","doi":"10.1116/6.0002922","DOIUrl":"https://doi.org/10.1116/6.0002922","url":null,"abstract":"The interfacial reactivity at the Co/CuO interfaces has been investigated in situ by the technique of x-ray photoelectron spectroscopy. Thin films of cobalt were evaporated on the CuO substrates by the technique of e-beam. The depositions were undertaken by maintaining the substrates at ambient temperature. Significant differences have been observed in the Cu 2p core level spectra recorded for these samples and that for pure CuO. The Co 2p core level spectrum also shows differences upon comparison with the spectrum for elemental cobalt. These differences arise from chemical interaction occurring at the Co/CuO interface. The curve fitting technique has been utilized to estimate the relative percentages of the constituents at the interface. The interface width has been determined from the relative percentage of the unoxidized cobalt present in the overlayer. The dependence of the interface width has also been explored as a function of annealing temperature. The interface width is much less for the room temperature deposited sample as compared to that for annealed samples. The spectral data also indicate increase in the diffusion of copper oxide through the cobalt overlayer with increasing temperature.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134954216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

E-mode AlGaN/GaN HEMTs using p-NiO gates 采用p-NiO栅极的e模AlGaN/GaN hemt

Journal of Vacuum Science and Technology Pub Date : 2023-11-08 DOI: 10.1116/6.0003119

Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, S. J. Pearton

引用次数: 0

Effect of atomic-scale microstructures on TiZrV non-evaporable getter film activation 原子尺度微结构对TiZrV非蒸发吸气剂膜活化的影响

Journal of Vacuum Science and Technology Pub Date : 2023-11-08 DOI: 10.1116/6.0002992

Qingzhi Shi, Sihui Wang, Pengcheng Wang, Yongsheng Ma, Biao Tan, Shiyuan Shi, Tao Huang, Tao Huang, Fei Sun, Lixin Wang, Xiaoguang Zhao, Shuping Chen, Meitong Lu

{"title":"Effect of atomic-scale microstructures on TiZrV non-evaporable getter film activation","authors":"Qingzhi Shi, Sihui Wang, Pengcheng Wang, Yongsheng Ma, Biao Tan, Shiyuan Shi, Tao Huang, Tao Huang, Fei Sun, Lixin Wang, Xiaoguang Zhao, Shuping Chen, Meitong Lu","doi":"10.1116/6.0002992","DOIUrl":"https://doi.org/10.1116/6.0002992","url":null,"abstract":"Non-evaporable getter (NEG) films are widely used in high vacuum technologies and have played a critical role in applications requiring ultrahigh vacuum conditions, such as accelerator vacuum systems. The passivation layers on the film surface due to air exposure generally require thermal vacuum activation. This research aims to elucidate the key factor in the activation of TiZrV NEG films from the perspective of atomic-scale microstructures. The characteristics of film element distributions, morphologies, and crystalline states before and after activation were investigated by energy dispersive spectroscopy, scanning electron microscopy, and grazing incidence x-ray diffraction. In situ x-ray photoelectron spectroscopy was used to detect compositional variations in the film surface layer at different activation temperatures. According to the analysis, from an atomic-scale perspective, the easily activated structures would degrade in activation performance when surrounded by structures that are difficult to activate. During activation, the activated structures tend to act as channels for foreign atoms until the surrounding structures are fully activated. Hydroxyl and carbonyl groups are generally easier to activate than hydrocarbons and surface carbides, but even groups of the same type vary greatly in activation difficulty due to the differences in atomic-scale microstructures on the film surface. These findings provide valuable insight into the activation of NEG films and may be beneficial in the design of novel NEG films with excellent activation performance.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135390312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics 采用高k栅极介质的金属氧化物半导体结构晶体管中远端声子散射的研究进展

Journal of Vacuum Science and Technology Pub Date : 2023-11-02 DOI: 10.1116/5.0156557

Yuan Xiao Ma, Hui Su, Wing Man Tang, Pui To Lai

{"title":"Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics","authors":"Yuan Xiao Ma, Hui Su, Wing Man Tang, Pui To Lai","doi":"10.1116/5.0156557","DOIUrl":"https://doi.org/10.1116/5.0156557","url":null,"abstract":"One main obstacle to obtaining high carrier mobility in transistors with metal-oxide-semiconductor (MOS) structures is carrier scattering, which has been systematically investigated. In the past few decades, much attention was preferentially paid to the scatterings arising from the region near the semiconductor/oxide interface because they can affect the carrier transport in the semiconductor channel more directly and effectively, e.g., polaronic effect, Coulomb scattering, surface-roughness scattering, and intrinsic phonon scattering resulted from the thermal vibration of the semiconductor channel. However, scattering originated from hybrid interface plasmon/optical-phonon excitations, so-called remote phonon scattering, has been neglected to some extent, but is especially severe for gate oxides with high dielectric constants due to the easy vibrations of their atoms. On the other hand, plasmons generated from the oscillations of majority carriers in the gate electrode can couple with the remote phonons to suppress the remote phonon scattering, which is called the gate screening effect. However, when the frequency of the gate-electrode plasmon is close/equal to that of the gate-dielectric phonon, the resonance between the gate electrode and the gate dielectric greatly enhances the remote phonon scattering to severely degrade the carrier mobility (so-called gate antiscreening effect). This work intends to give a comprehensive review on the origins, effects, suppression methods, and recent advances of the remote phonon scattering, with a view to achieving high-mobility MOS devices (including those based on two-dimensional semiconductors) with high-k gate dielectrics for future high-speed electronic applications.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135972673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth 金属有机化学气相沉积生长的半导体器件——半导体外延生长用瑞士军刀的发展

Journal of Vacuum Science and Technology Pub Date : 2023-10-31 DOI: 10.1116/6.0003062

Russell D. Dupuis

引用次数: 0

Water-soluble bio-sourced resist interactions with fluorinated etching plasmas during the photolithography process 水溶性生物源抗蚀剂与氟化蚀刻等离子体在光刻过程中的相互作用

Journal of Vacuum Science and Technology Pub Date : 2023-10-31 DOI: 10.1116/6.0002934

Paule Durin, Olha Sysova, Alexandre Téolis, Stéphane Trombotto, Samar Hajjar-Garreau, Thierry Delair, Isabelle Servin, Névine Rochat, Raluca Tiron, Corinne Gablin, Olivier Soppera, Aziz Benamrouche, Thomas Géhin, Didier Léonard, Jean-Louis Leclercq, Yann Chevolot

{"title":"Water-soluble bio-sourced resist interactions with fluorinated etching plasmas during the photolithography process","authors":"Paule Durin, Olha Sysova, Alexandre Téolis, Stéphane Trombotto, Samar Hajjar-Garreau, Thierry Delair, Isabelle Servin, Névine Rochat, Raluca Tiron, Corinne Gablin, Olivier Soppera, Aziz Benamrouche, Thomas Géhin, Didier Léonard, Jean-Louis Leclercq, Yann Chevolot","doi":"10.1116/6.0002934","DOIUrl":"https://doi.org/10.1116/6.0002934","url":null,"abstract":"Lithography is one of the key steps in micro/nanofabrication, which involves the use of oil-based resists, organic solvents, and toxic chemicals. Nowadays, environmental issues and regulation have raised the need for developing greener materials and processes. Therefore, efforts have been devoted to developing greener resists, in particular, resists based on water-soluble bio-sourced polymers. Among these biopolymers, polysaccharides have gained a strong interest. However, their interaction with silica etching plasmas, in particular, fluorinated plasmas, remains scarcely studied and contradictory results are found in the literature. The present contribution reports on the study of the interaction of two chitosans exhibiting different degrees of N-acetylation with SF6/Ar and CHF3 etching plasmas. The surface modifications and in-depth modifications were studied with x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, infrared spectroscopy, water contact angle, and size-exclusion chromatography. The effect of neutrals, ions, and vacuum ultraviolet (VUV) was considered. Our results suggest that the chitosan selectivity is greatly influenced by the deposition of a fluorocarbon film and that VUV seems to be involved in scissions of the polymer chains. No significant difference between the two chitosans was observed.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135863981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical vapor deposition simulator by graphical processor unit ray casting 物理气相沉积模拟器由图形处理器单元射线投射

Journal of Vacuum Science and Technology Pub Date : 2023-10-31 DOI: 10.1116/6.0003045

Adam R. Thomas, Naresh B. Kotadiya, Binyu Wang, Tara P. Dhakal

引用次数: 0

Permeation of oxygen and water into a plasma-enhanced chemical vapor deposited silicon nitride film as function of deposition pressure 氧和水在等离子体增强化学气相沉积氮化硅薄膜中的渗透与沉积压力的关系

Journal of Vacuum Science and Technology Pub Date : 2023-10-31 DOI: 10.1116/6.0003050

Masayuki Shiochi, Hiroshi Fujimoto, Hin Wai Mo, Keiko Inoue, Yusaku Tanahashi, Hiroyuki Hosomi, Takashi Miyamoto, Hiroshi Miyazaki, Chihaya Adachi

引用次数: 0

Ion-beam-assisted growth of cesium-antimonide photocathodes 离子束辅助锑化铯光电阴极的生长

Journal of Vacuum Science and Technology Pub Date : 2023-10-27 DOI: 10.1116/6.0002909

Pallavi Saha, Eric Montgomery, Shashi Poddar, Oksana Chubenko, Siddharth Karkare

引用次数: 0