Journal of Vacuum Science and Technology最新文献_第10页

Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique 利用液态镓挤压技术大规模合成原子薄超宽带隙β-Ga2O3

Journal of Vacuum Science and Technology Pub Date : 2021-03-26 DOI: 10.1116/6.0000927

Hyunik Park, Y. Choi, S. Yang, Jinho Bae, Jihyun Kim

{"title":"Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique","authors":"Hyunik Park, Y. Choi, S. Yang, Jinho Bae, Jihyun Kim","doi":"10.1116/6.0000927","DOIUrl":"https://doi.org/10.1116/6.0000927","url":null,"abstract":"β-Ga2O3, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and solar-blind optoelectronics. Scaling down of β-Ga2O3 to the atomic level affords the advantages of two-dimensional (2D) materials, while maintaining the inherent properties of the parent bulk counterpart. Here, we demonstrate a simple approach to synthesize ultrathin millimeter-size β-Ga2O3 sheets using a liquid gallium squeezing technique. The GaOx nanolayer produced by stamping liquid gallium under the Cabrera–Mott oxidation was converted into few-atom-thick β-Ga2O3 via thermal annealing under atmospheric conditions. This approach was also applied to various substrates such as SiO2, Si, graphene, quartz, and sapphire to heteroepitaxially synthesize 2D β-Ga2O3 on a target substrate. Finally, we propose a patterning strategy combining the squeezing technique with conventional lithography to obtain a β-Ga2O3 layer with a controllable thickness and shape. Our synthetic method has the potential to overcome the limitations of conventional β-Ga2O3 growth methods, paving a path for applications in UWBG-based (opto-)electronics with a high throughput in a cost-effective manner.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85598174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Ion implantation in β-Ga2O3: Physics and technology β-Ga2O3离子注入:物理与技术

Journal of Vacuum Science and Technology Pub Date : 2021-03-26 DOI: 10.1116/6.0000928

A. Nikolskaya, E. Okulich, D. Korolev, A. Stepanov, D. Nikolichev, A. Mikhaylov, D. Tetelbaum, A. Almaev, C. A. Bolzan, A. Buaczik, R. Giulian, P. L. Grande, Ashok Kumar, Mahesh Kumar, D. Gogova

{"title":"Ion implantation in β-Ga2O3: Physics and technology","authors":"A. Nikolskaya, E. Okulich, D. Korolev, A. Stepanov, D. Nikolichev, A. Mikhaylov, D. Tetelbaum, A. Almaev, C. A. Bolzan, A. Buaczik, R. Giulian, P. L. Grande, Ashok Kumar, Mahesh Kumar, D. Gogova","doi":"10.1116/6.0000928","DOIUrl":"https://doi.org/10.1116/6.0000928","url":null,"abstract":"Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties. The very high breakdown electric field and the figure of merit rivaled only by diamond have tremendous potential for the next generation “green” electronics enabling efficient distribution, use, and conversion of electrical energy. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the status of ion implantation in β-Ga2O3 nowadays is reviewed. Attention is mainly paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defect parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of Ga2O3-based devices, such as metal oxide field-effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91350908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 36

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches 地形选择性沉积:等离子体增强原子层沉积/溅射与等离子体增强原子层沉积/准原子层蚀刻方法的比较

Journal of Vacuum Science and Technology Pub Date : 2021-03-24 DOI: 10.1116/6.0000969

Moustapha Jaffal, Taguhi Yeghoyan, G. Lefévre, R. Gassilloud, N. Possémé, C. Vallée, M. Bonvalot

{"title":"Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches","authors":"Moustapha Jaffal, Taguhi Yeghoyan, G. Lefévre, R. Gassilloud, N. Possémé, C. Vallée, M. Bonvalot","doi":"10.1116/6.0000969","DOIUrl":"https://doi.org/10.1116/6.0000969","url":null,"abstract":"In this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures. A proof of concept is provided for the TSD of Ta2O5. The TSD process relies on plasma-enhanced atomic layer deposition (PEALD) alternating with quasi-atomic layer etching (ALE). Quasi-ALE involves a fluorination treatment followed by a directional Ar+ sputtering step. We show that the fluorination treatment allows a significant decrease in the incident kinetic energy of the subsequent directional Ar+ sputtering step. Conversely, when no fluorination step is carried out, TSD requires high incident kinetic energies during the directional Ar+ sputtering step, which, in turn, leads to detrimental plasma-induced damage on horizontal surfaces, such as roughness, also promoting by-product redeposition. The benefits and shortcomings of these two TSD approaches—PEALD/quasi-ALE and PEALD/energetic Ar+ sputtering—are compared in light of potential bottom-up technological developments.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90441701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodes β-Ga2O3/Si基肖特基势垒二极管中与衬底取向相关的电流输运机制

Journal of Vacuum Science and Technology Pub Date : 2021-03-24 DOI: 10.1116/6.0000858

M. Yadav, A. Mondal, S. Sharma, A. Bag

{"title":"Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodes","authors":"M. Yadav, A. Mondal, S. Sharma, A. Bag","doi":"10.1116/6.0000858","DOIUrl":"https://doi.org/10.1116/6.0000858","url":null,"abstract":"Sapphire and gallium oxide have been used as substrates for most of the reported results on β-Ga2O3 devices. However, silicon (Si) is an abundant material on the Earth, leading to easier and low-cost availability of this substrate, along with higher thermal conductivity, which makes Si a promising and potential substrate candidate for rapid commercialization. Therefore, in order to strengthen the feasibility of Ga2O3 on Si integration technology, we have deposited β-Ga2O3 on (100) and (111) oriented p-Si substrates using a pulsed laser deposition technique. A single-phase (β) and polycrystalline nature of the β-Ga2O3 film is observed for both samples using x-ray diffraction. A low root mean square roughness of 3.62 nm has been measured for Ga2O3/Si(100), as compared to 5.43 nm of Ga2O3/Si(111) using atomic force microscope. Moreover, Ga2O3/Si(100) shows a smoother and uniform surface of the Ga2O3 film, whereas Ga2O3/Si(111) seems to have a rougher surface with pitlike defects. This might be due to the hexagonal projection of Si (111) that is not suitable for obtaining a good tilted cuboid or monoclinic Ga2O3 crystal unlike the rectangle projection of Si (100). The electrical parameters of the fabricated Schottky barrier diodes were extracted using current–voltage (I–V) and capacitance–voltage (C–V) characteristics. The polycrystalline Ga2O3 film on Si(100) leads to fewer defects emerging from the Ga2O3/Si heterointerface due to the close symmetry of Ga2O3 and the Si(100) crystal with rectangle projections unlike Ga2O3 on Si(111). These fewer defects eventually lead to a better diode performance of Ga2O3/Si(100) where we have observed typical thermionic dominating carrier transport, whereas defect-assisted thermionic field emission has been the primary carrier transport mechanism in Ga2O3/Si(111). Hence, the Si (100) substrate is demonstrated to be a better and potential platform for Ga2O3 devices than Si (111).","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82713689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy 分子束外延在CdTe(001)上生长高质量α-Sn薄膜中的多载流子输运

Journal of Vacuum Science and Technology Pub Date : 2021-03-24 DOI: 10.1116/6.0000756

Yuanfeng Ding, Jinshan Yao, Ziyuan Yuan, Chen Li, Ming-Hui Lu, Hong Lu, Yan-Feng Chen

引用次数: 3

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study 铪前驱体与偕胺-环戊二烯基配体的表面反应:密度泛函理论研究

Journal of Vacuum Science and Technology Pub Date : 2021-03-23 DOI: 10.1116/6.0000796

Romel Hidayat, Hye-Lee Kim, Hohoon Kim, Y. Byun, Jongsoo Lee, Won-Jun Lee

引用次数: 6

(tBuN)SiMe2NMe2—A new N,N′-κ2-monoanionic ligand for atomic layer deposition precursors (tBuN) sime2nme2 -一种新的N,N ' -κ2单阴离子配体，用于原子层沉积前驱体

Journal of Vacuum Science and Technology Pub Date : 2021-03-22 DOI: 10.1116/6.0000795

Matthew B. E. Griffiths, D. Zanders, Michael A. Land, Jason D. Masuda, A. Devi, S. Barry

引用次数: 1

Properties of indium tin oxide thin films grown by Ar ion beam sputter deposition 氩离子束溅射沉积氧化铟锡薄膜的性能

Journal of Vacuum Science and Technology Pub Date : 2021-03-22 DOI: 10.1116/6.0000917

C. Bundesmann, J. Bauer, A. Finzel, J. Gerlach, W. Knolle, A. Hellmich, R. Synowicki

{"title":"Properties of indium tin oxide thin films grown by Ar ion beam sputter deposition","authors":"C. Bundesmann, J. Bauer, A. Finzel, J. Gerlach, W. Knolle, A. Hellmich, R. Synowicki","doi":"10.1116/6.0000917","DOIUrl":"https://doi.org/10.1116/6.0000917","url":null,"abstract":"Indium tin oxide (ITO) thin films were grown by Ar ion beam sputter deposition under systematic variation of ion energy, geometrical parameters, and O 2 background pressure and characterized with regard to the film thickness, growth rate, crystalline structure, surface roughness, mass density, composition, electrical, and optical properties. The growth rate shows an over-cosine, forward-tilted angular distribution with a maximum, which increases with increasing ion energy, increasing ion incidence angle, and decreasing O 2 background pressure. ITO films were found to be amorphous with a surface roughness of less than 1 nm. Mass density and composition show only small changes with increasing scattering angle. The electrical resistivity behavior in dependence on the process parameters is complex. It is not only driven by the O 2 background pressure but also very much by the scattering angle. The observed behavior can be understood only if competing processes are considered: (i) reduction of the number of oxygen vacancies due to the presence of O 2 background gas and (ii) defect generation and preferential sputtering of oxygen at the surface of the growing films due to the impact of high-energy scattered particles. Even though absolute numbers differ, optical characterization suggests a similar systematics.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86115819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Influence of W content on microstructure and surface morphology of hard Ni-W films fabricated by magnetron co-sputtering W含量对磁控共溅射制备Ni-W硬膜微观结构和表面形貌的影响

Journal of Vacuum Science and Technology Pub Date : 2021-03-22 DOI: 10.1116/6.0000915

Amir R. Esmaeili, N. Mir, R. Mohammadi

{"title":"Influence of W content on microstructure and surface morphology of hard Ni-W films fabricated by magnetron co-sputtering","authors":"Amir R. Esmaeili, N. Mir, R. Mohammadi","doi":"10.1116/6.0000915","DOIUrl":"https://doi.org/10.1116/6.0000915","url":null,"abstract":"Due to their unique mechanical, tribological, thermal, and anticorrosion properties, nickel-tungsten (Ni-W) alloy films have become indispensable for many industrial applications. The present study investigates the impact of W content on the microstructure and mechanical properties of Ni-W thin films. By co-sputtering of Ni and W on silicon wafers coated with a thin buffer layer (∼20 nm) of titanium (Ti), six Ni-W coatings were fabricated, ranging from pure Ni to pure W. The samples were characterized using energy dispersive spectroscopy, x-ray diffraction, scanning electron microscopy, atomic force microscopy, and microindentation. The results show that hardness of the Ni-W films is primarily a function of the W content, which changes the microstructure and surface morphology of the samples. When W concentration is smaller than 40 at. %, the Ni-rich samples have a face-centered cubic structure and the hardness increases with the W content. For the samples having 40 < W < 55 at. %, the sensitivity of the hardness to the W content becomes markedly low, which could be due to the presence of an amorphous phase. Finally, the impact of W addition on the hardness of the samples containing 55–80 at. % W is two times greater than that of W < 40 at. %. The extra hardening effect could be attributed to the dominancy of a solid solution hardened body-centered cubic W phase and electronic interaction between two transition metals. This sharp increase in the hardness leads to obtaining a high hardness of 21.9 ± 2.0 GPa for the Ni-79 at. % W film. The findings of this study show that solid solution strengthening could be considered the main hardening mechanism of these films.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90611587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Influence of quantum-confined device fabrication on semiconductor-laser theory 量子受限器件制造对半导体激光理论的影响

Journal of Vacuum Science and Technology Pub Date : 2021-03-19 DOI: 10.1116/6.0000767

W. Chow, F. Jahnke

引用次数: 0