Journal of Vacuum Science and Technology最新文献_第9页

Defect species in Ga-doped ZnO films characterized by photoluminescence 光致发光表征ga掺杂ZnO薄膜中的缺陷物质

Journal of Vacuum Science and Technology Pub Date : 2021-05-01 DOI: 10.1116/6.0000937

H. Akazawa

引用次数: 1

In situ compositional mapping of combinatorial materials libraries by scanning low-angle x-ray spectroscopy 用扫描低角x射线光谱学进行组合材料库的原位成分作图

Journal of Vacuum Science and Technology Pub Date : 2021-04-30 DOI: 10.1116/6.0000862

Jeonggoo Kim, M. Strikovski, Steve Garrahan, Richard Mozelack, J. E. Parkinson, Solomon H. Kolagani

{"title":"In situ compositional mapping of combinatorial materials libraries by scanning low-angle x-ray spectroscopy","authors":"Jeonggoo Kim, M. Strikovski, Steve Garrahan, Richard Mozelack, J. E. Parkinson, Solomon H. Kolagani","doi":"10.1116/6.0000862","DOIUrl":"https://doi.org/10.1116/6.0000862","url":null,"abstract":"A novel in situ diagnostic, scanning low-angle x-ray spectroscopy, has been introduced for compositional mapping of combinatorial thin film libraries. The technique uses high-energy electron beam-generated characteristic x rays from the films as they are deposited. The x-ray intensities are acquired dynamically, layer by layer at different film thicknesses, processed, and analyzed by Neocera-developed software using a unique algorithm. A fully automated four-axis mechanical stage facilitates data acquisition from a 2-in. diameter wafer providing a comprehensive compositional map across the wafer. A ternary materials library of Zn-Ti-Cr oxide has been deposited by continuous composition spread pulsed laser deposition to demonstrate the novel application of scanning low-angle x-ray spectroscopy for compositional mapping in situ. This in situ feedback on composition across the wafer significantly enhances the capability of any physical vapor deposition technique used for depositing combinatorial libraries, by providing compositional feedback during growth as well as the ability to monitor and control deposition processes for composition optimizations.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88731131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications 用于双色量子阱红外光电探测器的II-VI半导体多层量子阱结构的生长和表征

Journal of Vacuum Science and Technology Pub Date : 2021-04-23 DOI: 10.1116/6.0000947

Luis C. Hernandez-Mainet, Guopeng Chen, A. Zangiabadi, A. Shen, M. Tamargo

{"title":"Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications","authors":"Luis C. Hernandez-Mainet, Guopeng Chen, A. Zangiabadi, A. Shen, M. Tamargo","doi":"10.1116/6.0000947","DOIUrl":"https://doi.org/10.1116/6.0000947","url":null,"abstract":"The design, growth, and characterizations of ZnCdSe/ZnCdMgSe semiconductor multilayer quantum-well structures for two-color quantum-well infrared photodetectors (QWIPs) are reported. The energy band and quantum well states are computed in a ZnCdSe/ZnCdMgSe single quantum well for both infrared detection regions. The sample has been grown in a multichamber molecular beam epitaxy system. The good crystalline quality of sample and its lattice matching to the InP substrate are investigated by high-resolution x-ray diffraction and transmission electron microscopy analysis. These structural measurements also confirm the good agreement between the design and the grown structure. The band-to-band and interband transition energies are experimentally determined by photoluminescence and contactless electroreflectance, respectively. The intersubband absorption spectra are investigated by Fourier transform infrared spectroscopy at room temperature. This multilayer structure represents a significant technological validation of the capabilities and potential of InP-based II-VI materials for engineering two-color QWIP devices. This paper provides a detailed methodology for the growth and in-depth characterization of such a complex high precision multilayered structure.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84911491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Atomic layer deposition of chromium oxide—An interplay between deposition and etching 氧化铬的原子层沉积-沉积和蚀刻之间的相互作用

Journal of Vacuum Science and Technology Pub Date : 2021-04-23 DOI: 10.1116/6.0000896

Bireswar Mandol, Neha Mahuli, K. Ohno, L. Scudder, S. Sarkar

{"title":"Atomic layer deposition of chromium oxide—An interplay between deposition and etching","authors":"Bireswar Mandol, Neha Mahuli, K. Ohno, L. Scudder, S. Sarkar","doi":"10.1116/6.0000896","DOIUrl":"https://doi.org/10.1116/6.0000896","url":null,"abstract":"Atomic layer deposition (ALD) of chromium oxide (Cr2O3) thin films is investigated in a custom built hot wall viscous flow reactor configuration at 300 °C. Chromium(III) 2,4-pentanedionate [Cr(acac)3] and ozone (O3) are employed as the metal and the oxygen sources, respectively. In situ quartz crystal microbalance (QCM) and ex situ x-ray reflectivity studies are utilized as the two complementary techniques to monitor the growth mechanism and self-limiting deposition chemistry during Cr2O3 ALD. In situ QCM studies reveal a negligible nucleation period on the previously grown Al-OH* terminated surface before revealing the perfectly linear growth mechanism at 300 °C. The saturated growth rate is found to be ca. 0.28 A/cycle. In addition, excessive O3 exposure also reveals an alternative, controlled, and spontaneous etching pathway of the growing film as a result of the partial surface oxidation of Cr2O3. The as-deposited thin films are found to exhibit a polycrystalline rhombohedral structure without any preferential orientation. X-ray photoelectron spectroscopy studies reveal uniform distribution of Cr and O throughout the stack of ca. 40 nm film with minimum C impurities. High resolution scans of Cr 2p core level also confirm the presence of Cr in the +3 oxidation state with the corresponding multiplet spectrum.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80380246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Oxidative molecular layer deposition of PEDOT using volatile antimony(V) chloride oxidant 利用挥发性氯化锑氧化剂沉积PEDOT的氧化分子层

Journal of Vacuum Science and Technology Pub Date : 2021-04-22 DOI: 10.1116/6.0000791

Amanda A. Volk, Jung-Sik Kim, Jovenal D. Jamir, E. Dickey, G. Parsons

引用次数: 9

Epitaxial integration of BaTiO3 on Si for electro-optic applications 电光应用中BaTiO3在Si上外延集成

Journal of Vacuum Science and Technology Pub Date : 2021-04-12 DOI: 10.1116/6.0000923

Wei-lian Guo, A. Posadas, A. Demkov

{"title":"Epitaxial integration of BaTiO3 on Si for electro-optic applications","authors":"Wei-lian Guo, A. Posadas, A. Demkov","doi":"10.1116/6.0000923","DOIUrl":"https://doi.org/10.1116/6.0000923","url":null,"abstract":"BaTiO3 (BTO) is a highly promising material for the fabrication of electro-optic (EO) modulators due to the large effective Pockels coefficient of the material, particularly in an epitaxial form. It also has the added benefit of being readily integrated on a Si material platform via a SrTiO3 template. These two characteristics make epitaxial BTO ideal for use in next generation silicon photonics applications. Being a ferroelectric, BTO has a unique crystallographic direction in which the ferroelectric polarization points. For EO modulators, because the polarization direction controls the coupling between light and an external electric field, it is important to understand how different growth methods and subsequent processing affect the direction of the ferroelectric polarization. Certain electro-optic devices may require polarization to be in the plane of the film (in-plane switching liquid crystal devices), while other applications may require it to be normal to the plane of the film (Mach–Zehnder modulator). Here, we review the growth of epitaxial BTO on Si by a variety of deposition methods including molecular beam epitaxy, pulsed laser deposition, and RF sputtering. We summarize the resulting BTO film structure and quality based on the reported characterization results. We also discuss EO measurements of basic devices made from this material platform where such data are available.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76982306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy 利用飞行时间-二次离子质谱法定量分析SiC中Al的深度分布

Journal of Vacuum Science and Technology Pub Date : 2021-04-05 DOI: 10.1116/6.0000905

V. Smentkowski, S. Goswami

引用次数: 2

High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3 基于α-Ga2O3的高响应度太阳盲金属-半导体-金属光电探测器

Journal of Vacuum Science and Technology Pub Date : 2021-04-02 DOI: 10.1116/6.0000940

Jinho Bae, D. Jeon, Ji-Hyeon Park, Jihyun Kim

引用次数: 18

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy 分子束外延生长的异价半导体结构与器件

Journal of Vacuum Science and Technology Pub Date : 2021-04-01 DOI: 10.1116/6.0000802

Yong-Hang Zhang, David J. Smith

{"title":"Heterovalent semiconductor structures and devices grown by molecular beam epitaxy","authors":"Yong-Hang Zhang, David J. Smith","doi":"10.1116/6.0000802","DOIUrl":"https://doi.org/10.1116/6.0000802","url":null,"abstract":"Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a ∼ 0.13%), CdTe/InSb (Δa/a ∼ 0.05%), and ZnSe/GaAs (Δa/a ∼ 0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (∼1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/MgxCd1−xTe double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83408192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Study of plasma etching impact on chemoepitaxy directed self-assembly 等离子体刻蚀对化学外延定向自组装影响的研究

Journal of Vacuum Science and Technology Pub Date : 2021-03-29 DOI: 10.1116/6.0000850

M. G. Gusmão Cacho, K. Benotmane, A. Le Pennec, C. Bouet, P. Pimenta-Barros, G. Rademaker, M. Argoud, R. Tiron, N. Possémé

{"title":"Study of plasma etching impact on chemoepitaxy directed self-assembly","authors":"M. G. Gusmão Cacho, K. Benotmane, A. Le Pennec, C. Bouet, P. Pimenta-Barros, G. Rademaker, M. Argoud, R. Tiron, N. Possémé","doi":"10.1116/6.0000850","DOIUrl":"https://doi.org/10.1116/6.0000850","url":null,"abstract":"Directed self-assembly (DSA) of block copolymers is one of the most promising solutions investigated to obtain small and dense patterns for the sub-10 nm nodes. One of the most important aspects of the DSA technology is the orientation control of the block copolymer, which is determined by surface properties and different guiding techniques. Regarding the Arkema-CEA (ACE) chemoepitaxy process, one of the critical parameters is the preservation of the neutral layer’s properties during hydrofluoric acid wet etching, especially regarding its adherence to the titanium nitride (TiN) hard mask. In this paper, the different etching steps involved in the ACE integration flow are evaluated. Their effects on the surface properties of the TiN hard mask and on the adherence of the neutral layer are investigated by x-ray photoelectron spectroscopy and contact angle measurements. Finally, the results obtained are used to optimize the different etching steps, thus demonstrating the chemoepitaxy of a polystyrene-b-poly(methyl methacrylate) block copolymer with 32 nm pitch without alignment defects on a 100 μm2 surface.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86923171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1