Oxidative molecular layer deposition of PEDOT using volatile antimony(V) chloride oxidant

Amanda A. Volk, Jung-Sik Kim, Jovenal D. Jamir, E. Dickey, G. Parsons
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引用次数: 9

Abstract

Molecular layer deposition and chemical vapor deposition are emerging and promising techniques for the incorporation of high-performance conductive polymers into high surface area devices, such as sintered tantalum anodes for electrolytic capacitors. Until recently, vapor-phase synthesis of poly(3,4-ethylenedioxythiophene) (PEDOT) has relied on solid reactants which require relatively high temperatures and complex dosing schemes for sequential layer-by-layer processes. This work introduces a facile and high-performing layer-by-layer oxidative molecular layer deposition (oMLD) scheme using the volatile liquid oxidant antimony(V) chloride (SbCl5) to deposit PEDOT thin films. Effects of reactor parameters on PEDOT film characteristics are described, and the necessary foundation for future studies aiming to understand the nucleation and growth of layer-by-layer oMLD PEDOT is detailed.
利用挥发性氯化锑氧化剂沉积PEDOT的氧化分子层
分子层沉积和化学气相沉积是新兴和有前途的技术,用于将高性能导电聚合物结合到高表面积器件中,例如用于电解电容器的烧结钽阳极。直到最近,气相合成聚(3,4-乙烯二氧噻吩)(PEDOT)一直依赖于固体反应物,这需要相对较高的温度和复杂的加药方案来进行逐层的顺序过程。本工作介绍了一种简单、高性能的逐层氧化分子层沉积(oMLD)方案,该方案使用挥发性液体氧化剂氯化锑(SbCl5)沉积PEDOT薄膜。描述了反应器参数对PEDOT膜特性的影响,并为进一步了解单层oMLD PEDOT的成核和生长奠定了必要的基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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