(tBuN)SiMe2NMe2—A new N,N′-κ2-monoanionic ligand for atomic layer deposition precursors

Matthew B. E. Griffiths, D. Zanders, Michael A. Land, Jason D. Masuda, A. Devi, S. Barry
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引用次数: 1

Abstract

Eight new atomic layer deposition (ALD) precursors were synthesized using a ligand that is new to the field of ALD: (tBuNH)SiMe2NMe2. Complexes containing Mg, V, Mn, Fe, Co, Ni, and Zn were found to be tetrahedral, and Li complexes form more complex structures. These compounds performed exceptionally well by thermogravimetric analysis (TGA). All compounds except for one Li species and the Fe complex left residual masses below 5%, similar or better than the analogous amidinate complexes. In particular, the Co(II) complex is very thermally robust and performs very well during a TGA stress test, surpassing temperatures above 200 °C. These compounds are the first of a family of precursors containing this type of monoanionic N–Si–N ligand and are prime candidates for ALD process development.
(tBuN) sime2nme2 -一种新的N,N ' -κ2单阴离子配体,用于原子层沉积前驱体
采用一种新配体(tBuNH)SiMe2NMe2合成了8种新的原子层沉积(ALD)前驱体。含有Mg、V、Mn、Fe、Co、Ni和Zn的配合物呈四面体结构,而Li配合物的结构更为复杂。这些化合物通过热重分析(TGA)表现得非常好。除一种Li和铁配合物外,所有化合物的剩余质量均低于5%,与类似的氨基酸配合物相似或更好。特别是,Co(II)配合物具有很强的热稳定性,在TGA应力测试中表现良好,温度超过200°C以上。这些化合物是含有这种类型的单阴离子N-Si-N配体的前体家族中的第一个,是ALD工艺发展的主要候选者。
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