量子受限器件制造对半导体激光理论的影响

W. Chow, F. Jahnke
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引用次数: 0

摘要

在Arthur Gossard教授对晶体生长的许多贡献中,导致量子阱和量子点半导体激光器的质量和性能的重要改进。为了庆祝他的85岁生日,我们回顾了半导体激光理论的发展,该理论在一定程度上是由这些进步所激励和指导的。该理论结合了凝聚态物质理论和激光物理学,提供了微观层面的理解,即电子和空穴,以及它们在受晶格影响时与辐射场的相互作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of quantum-confined device fabrication on semiconductor-laser theory
Among Professor Arthur Gossard’s many contributions to crystal growth are those resulting in important improvements in the quality and performance of quantum-well and quantum-dot semiconductor lasers. In celebration of his 85th birthday, we review the development of a semiconductor laser theory that is motivated and guided, in part, by those advances. This theory combines condensed matter theory and laser physics to provide understanding at a microscopic level, i.e., in terms of electrons and holes, and their interaction with the radiation field while influenced by the lattice.
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