Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, S. J. Pearton
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引用次数: 0
摘要
溅射p-NiO薄膜用于抑制栅极泄漏，并使AlGaN/GaN高电子迁移率晶体管的栅极电压产生正位移，从而实现电子模式工作。与同一晶圆上制造的肖特基门控器件的直接比较表明，NiO在提高通断比和将阈值电压从- 0.95 V(肖特基门控)转移到+0.9 V (NiO门控)方面的实用性。在40 μm漏源分离下，击穿电压为780 V。亚阈值摆幅从肖特基门控hemt的181 mV/dec降至nio门控器件的128 mV/dec。简单的制造工艺无需任何退火或钝化步骤，显示了用于e模AlGaN/GaN HEMT操作的NiO栅极的前景。
Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. A direct comparison with Schottky-gated devices fabricated on the same wafer shows the utility of the NiO in increasing the on-off ratio and shifting the threshold voltage from −0.95 V (Schottky gated) to +0.9 V (NiO gated). The breakdown voltage was 780 V for a 40 μm drain-source separation. The subthreshold swing decreased from 181 mV/dec for Schottky-gated HEMTs to 128 mV/dec on NiO-gated devices. The simple fabrication process without any annealing or passivation steps shows the promise of NiO gates for e-mode AlGaN/GaN HEMT operation.
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