复杂氧化物表面和界面的深层缺陷光谱

Jun Zhang, K. McNicholas, S. Balaz, Zhaobing Zeng, D. Schlom, L. Brillson
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引用次数: 2

摘要

本征点缺陷通常存在于复合氧化物及其界面中,并能强烈地影响其电子性能。近表面和亚表面表征技术,深度分辨阴极发光光谱和表面光电压光谱,可以在近纳米尺度上测量复杂氧化物中本征点缺陷的密度分布、能级和光学跃迁。这些对SrTiO3、BaTiO3和相关材料的测量揭示了本征点缺陷对生长温度、机械应变、晶体取向和化学相互作用的敏感性。这些缺陷的空间再分布可以在表面和界面附近发生显著变化,并且可以产生强烈的电子效应。这些深层光谱与其他先进表征技术的结合为进一步扩大对复杂氧化物缺陷的理解和控制提供了一条途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deep level defect spectroscopies of complex oxide surfaces and interfaces
Intrinsic point defects are commonly present in and can strongly affect the electronic properties of complex oxides and their interfaces. The near- and subsurface characterization techniques, depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy, can measure the density distributions, energy levels, and optical transitions of intrinsic point defects in complex oxides on a near-nanometer scale. These measurements on SrTiO3, BaTiO3, and related materials reveal the sensitivity of intrinsic point defects to growth temperature, mechanical strain, crystal orientation, and chemical interactions. Spatial redistribution of these defects can vary significantly near surfaces and interfaces and can have strong electronic effects. The combination of these deep level spectroscopies along with other advanced characterization techniques provides an avenue to further expand the understanding and control of complex oxide defects in general.
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