Deep level defect spectroscopies of complex oxide surfaces and interfaces

Abstract

Intrinsic point defects are commonly present in and can strongly affect the electronic properties of complex oxides and their interfaces. The near- and subsurface characterization techniques, depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy, can measure the density distributions, energy levels, and optical transitions of intrinsic point defects in complex oxides on a near-nanometer scale. These measurements on SrTiO3, BaTiO3, and related materials reveal the sensitivity of intrinsic point defects to growth temperature, mechanical strain, crystal orientation, and chemical interactions. Spatial redistribution of these defects can vary significantly near surfaces and interfaces and can have strong electronic effects. The combination of these deep level spectroscopies along with other advanced characterization techniques provides an avenue to further expand the understanding and control of complex oxide defects in general.